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    BUK437 Price and Stock

    Philips Semiconductors BUK437-500A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BUK437-500A 48
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    Philips Semiconductors BUK437500B

    POWERMOS TRANSISTOR Power Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUK437500B 2,593
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    Others BUK437-400A

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange BUK437-400A 184
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    BUK437 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUK437-400A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK437-400A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK437-400A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK437-400A Philips Components Datasheet Library 1989 Scan PDF
    BUK437-400B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK437-400B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK437-400B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK437-400B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK437-400B Philips Components Datasheet Library 1989 Scan PDF
    BUK437-400B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK437-450B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK437-450B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK437-500A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK437-500A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK437-500A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK437-500A Philips Components Datasheet Library 1989 Scan PDF
    BUK437-500B Philips Semiconductors Advanced pager receiver Original PDF
    BUK437-500B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK437-500B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK437-500B Unknown Shortform Datasheet & Cross References Data Short Form PDF

    BUK437 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    FULL WAVE mosfet RECTIFIER CIRCUITS

    Abstract: snubber CIRCUITS mosfet 500a reversed diode Amp. mosfet 1000 watt byc10-600 equivalent ultraFast Recovery Bridge Rectifier high power fast recovery diodes 5 ns all mosfet equivalent book power recovery diode FAST RECOVERY DIODE
    Text: Philips Semiconductors Application Note Ultrafast Epitaxial Diodes for Power Factor Correction Choosing the correct diode is the most cost effective way of reducing MOSFET switching losses in active power factor correction circuits. Philips Semiconductors has


    Original     		PDF

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    BUK437-450B

    Abstract: T-39-15
    Text: N AMER 5SE PHILIPS/DISCRETE D •I fa b S B T a i 0050B 1S M PowerMOS transistor BUK437-450B T -3 ^ -1 5 * GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK437-450B OT-93; BUK437-450B T-39-15

    BUK437-600B

    Abstract: ATIC BUK437-600A
    Text: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 0020325 7 ■ PowerMOS transistor " BUK437-600A BUK437-600B T - 3 e? - 1S’ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbS3T31 0D2032S BUK437-600A BUK437-600B BUK437 -600A -600B OT-93; T-39-15 BUK437-600B ATIC BUK437-600A

    Untitled

    Abstract: No abstract text available
    Text: 2SE D N AUER PHILIPS/DISCRETE tbS3T31 0020325 7 BUK437-600A BUK437-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF tbS3T31 BUK437-600A BUK437-600B BUK437 -600A -600B

    BUK437-500A

    Abstract: BUK437-500B buk437 S1216
    Text: Philips Components BUK437-500A BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK437-500A BUK437-500B BUK437 -500A -500B M89-1142/RST BUK437-500A BUK437-500B S1216

    BUK437-600B

    Abstract: BUK437-600A BUK437 TNT sot
    Text: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK437-600A BUK437-600B BUK437 -600A -600B 00/nC M89-114imST BUK437-600B BUK437-600A TNT sot

    Untitled

    Abstract: No abstract text available
    Text: 2SE D N AMER PHILIPS/DISCRETE • bbsaiai 0020315 4 PowerMOS transistor BUK437-450B T " 3 '7 - I5 ' QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK437-450B

    BUK437-400A

    Abstract: buk437-400b 2428D dc smps BUK437
    Text: BUK437-400A BUK437-400B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eftect power transistor in a plastic envelope. The device is intended tor use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK437-400A BUK437-400B BUK437 -400A -400B -HJUK437-400A M89-1143/RST BUK437-400A buk437-400b 2428D dc smps

    BUK437-400A

    Abstract: BUK437-400B
    Text: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK437 -400A -400B BUK437-400A BUK437-400B

    BUK437-400B

    Abstract: DIODE JS.4 GS 069 LF
    Text: N ANER P H I L I P S / D I S C R E T E LTE D • bbSBSBl D030MÔD BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-chanrtel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF D030MÃ BUK437-400B BUK437-400B DIODE JS.4 GS 069 LF

    Untitled

    Abstract: No abstract text available
    Text: blE D N AUER PHILIPS/DISCRETE bbSa'IBI 0030465 E'IS « A P X Product Specification Philips Semiconductors BUK437-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK437-500B

    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE LTE D bbS3S31 DD30Mfl0 70b « A P X Product Specification Philips Semiconductors BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF bbS3S31 DD30Mfl0 BUK437-400B gat20 bb53T31 DQ30Mfl3

    NDS 40-20

    Abstract: BUK437-500B DIODE BB2
    Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711002b BUK437-500B NDS 40-20 BUK437-500B DIODE BB2

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bbSBT31 37-400A 437-400B BUK437 -400A -400B

    philips ET-E 60

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • bb 53 T 3 1 □D3D4TD bSS H A P X Philips Semiconductors Product Specification Pow erM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF BUK437-600B philips ET-E 60

    BUK437-500B

    Abstract: J812 DD304 HIA TRANSISTOR
    Text: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbS3R31 BUK437-500B btS3T31 BUK437-500B J812 DD304 HIA TRANSISTOR

    GS 069 LF

    Abstract: BUK437-400B DIODE JS.4 P02S
    Text: N ANER PH ILI PS/DISCRETE bbSBSBl 0G304Ô0 7Gb • APX LTE » Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF D030MÃ BUK437-400B GS 069 LF DIODE JS.4 P02S

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    BUK446-800B

    Abstract: BUK551-100A BUK583 BUK555 600b BUK5
    Text: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B


    OCR Scan     		PDF BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B BUK444-600B BUK455-600B BUK445-600B BUK457-600B BUK437-600B BUK454-800B BUK446-800B BUK551-100A BUK583 BUK555 600b BUK5

    BUK437-500B

    Abstract: No abstract text available
    Text: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bbS3R31 BUK437-500B btS3T31

    GS 069 LF

    Abstract: BUK437-600B IP Semiconductors A/blf 187
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK437-600B GS 069 LF BUK437-600B IP Semiconductors A/blf 187