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    BUK637 Search Results

    BUK637 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK637-400A Philips Semiconductors PowerMOS Transistor Fast Recovery Diode FET Original PDF
    BUK637-400A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK637-400A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK637-400A Philips Components Datasheet Library 1989 Scan PDF
    BUK637-400B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK637-400B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK637-400B Philips Components Datasheet Library 1989 Scan PDF
    BUK637-400B Philips Semiconductors PowerMOS transistor Fast recovery diode FET Scan PDF
    BUK637-450B Philips Semiconductors PowerMOS Transistor Fast Recovery Diode FET Original PDF
    BUK637-450B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK637-500A Philips Semiconductors PowerMOS Transistor Fast Recovery Diode FET Original PDF
    BUK637-500A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK637-500A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK637-500A Philips Components Datasheet Library 1989 Scan PDF
    BUK637-500B Philips Semiconductors PowerMOS Transistor Fast Recovery Diode FET Original PDF
    BUK637-500B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK637-500B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK637-500B Philips Components Datasheet Library 1989 Scan PDF
    BUK637-500B Philips Semiconductors PowerMOS transistor Fast recovery diode FET Scan PDF
    BUK637-500C Philips Semiconductors PowerMOS Transistor Fast Recovery Diode FET Original PDF

    BUK637 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUK637-400A

    Abstract: BUK637-400B
    Text: Philips Components BUK637-400A BUK637-400B PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode lield-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control


    OCR Scan     		BUK637-400A BUK637-400B BUK637 -400A -400B M89-1166/RC BUK637-400A BUK637-400B PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery


    OCR Scan     		BUK637-400B BUK637-400B PDF

    pir 500b

    Abstract: No abstract text available
    Text: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		Q020b6Q BUK637-500A BUK637-500B BUK637-500C 31-is* BUK637 bb53T31 0020bfl4 pir 500b PDF

    transistor A 564

    Abstract: 100-C BUK637-400B
    Text: N AflER P H I L I P S / D I S C R E T E Philips Semiconductors blE D • bbS3T31 DDBOfibS OHB W A P X - Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		bbS3T31 BUK637-400B transistor A 564 100-C PDF

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL bSE D • 711GÖ2b GübM3Gl Sb7 H P H I N Philips Semiconductors Product Specification BUK637-400B PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		BUK637-400B 711DflSb 0Qb43D5 PDF

    Transistor B C 458

    Abstract: BUK637-450B G02G
    Text: N AMER P H ILIP S /D IS C R E TE 5SE D • tibSB Tai □D201a7S 1 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-450B T -3 ? -|S " GENERAL DESCRIPTION QUICK REFERENCE OATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		BUK637-450B Transistor B C 458 G02G PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. REDFET with fast recovery


    OCR Scan     		BUK637-500B BUK637-500B PDF

    BUK637-500B

    Abstract: diod rj 93 500a fet Diode 500A BUK637-500A BUK637-500C BUK637
    Text: Philips Components BUK637-500A BUK637-500B BUK637-500C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancem ent mode lield-effect power transistor in a plastic envelope. F R E D F E T with last recovery reverse diode,


    OCR Scan     		BUK637-500A BUK637-500B BUK637-500C BUK637 -500A -500B -500C M89-1167/RC BUK637-500B diod rj 93 500a fet Diode 500A BUK637-500A BUK637-500C PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 Q020bfl5 4 ■ PowerMOS transistor Fast Recovery Diode FET BUK637-600A BUK637-600B BUK637-600C T ' - 3 cM £ ' _ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		Q020bfl5 BUK637-600A BUK637-600B BUK637-600C BUK637 reve637-600C T-39-15 IB-01 IE-02 IE-03 PDF

    BUK637-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		711002b D0b43Db BUK637-500B BUK637-500B PDF

    BUK637-500B

    Abstract: BUK637-500A BUK637-500C
    Text: N AMER PHILIPS/DISCRETE 55E D • Lb53T31 OQSQbôO S PowerMOS transistor Fast Recovery Diode FET ■ BUK637-500A BUK637-500B BUK637-500C T - 3 *7 -is* GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		BUK637-500A BUK637-500B BUK637-500C BUK637 -500A -500B -500C BUK637-500C PDF

    GS 069 LF

    Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
    Text: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		BUK637-500A BUK637-500B BUK637-500C BUK637 -500A -500B -500C T-39-15 GS 069 LF HCA-120 PDF

    BUK637-600A

    Abstract: BUK637-600B BUK637-600C BUK637
    Text: N AMER P H I L I P S / D I S C R E T E SSE D • ^ 5 3 = 1 3 1 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		BUK637-600A BUK637-600B BUK637-600C BUK637 -600A -600B -600C 1E-01 1E-03 1E-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE bTE D • bbSBTai DOBDfibS 0H3 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK637-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		BUK637-400B bb53T31 PDF

    BUK637-600A

    Abstract: BUK637-600B BUK637-600C
    Text: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,


    OCR Scan     		BUK637-600A BUK637-600B BUK637-600C BUK637 -600A -600B -600C BUK637-600A BUK637-600B BUK637-600C PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 5SE D bbSBTai 0020L.75 1 • PowerMOS transistor Fast Recovery Diode FET BUK637-450B r - 39 - is - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		0020L BUK637-450B Qa50t T-39-15 PDF

    BUK637-500B

    Abstract: No abstract text available
    Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		BUK637-500B BUK637-500B PDF

    k 246 transistor fet

    Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
    Text: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan     		BUK637-600A BUK637-600B BUK637-600C BUK637 -600A -600B -600C k 246 transistor fet 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120 PDF

    BUK637-400B

    Abstract: No abstract text available
    Text: PHILIPS IN TE RN AT IO NA L bSE ]> • 711DÖSb 0DbM3Gl Philips Semiconductors PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particular!/ suitable


    OCR Scan     		BUK637-400B BUK637-400B PDF

    transistor A 564

    Abstract: 100-P BUK637-400B
    Text: PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable for motor control applications, eg. in full bridge configurations for which


    OCR Scan     		BUK637-400B BUK637-400B transistor A 564 100-P PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable


    OCR Scan     		Q030b7D BUK637-400A BUK637-400B BUK637 -400A D0S0h74 PDF

    BUK637-400A

    Abstract: BUK637-400B in 4008 diode LP250 00a0B
    Text: N AMER P H I L I P S / D I S C R E T E aSE D ¡3^53^31 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly


    OCR Scan     		BUK637-400A BUK637-400B T-31-IS- BUK637 -400A -400B in 4008 diode LP250 00a0B PDF

    BUK637-400A

    Abstract: BUK637-400B P02S
    Text: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable


    OCR Scan     		BUK637-400A BUK637-400B BUK637 -400A -400B BUK637-400B P02S PDF