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    2N731 Price and Stock

    EDAC Inc J96068892N73121

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    EDAC Inc J96088892N73121

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    EDAC Inc J96048862N73121

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    EDAC Inc J96028892N73121

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    EDAC Inc J96088862N73121

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    2N731 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N731 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N731 Central Semiconductor Various Transistors Scan PDF
    2N731 Central Semiconductor Transistor Selection Guide Scan PDF
    2N731 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N731 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N731 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N731 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N731 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N731 Unknown Vintage Transistor Datasheets Scan PDF
    2N731 Unknown Vintage Transistor Datasheets Scan PDF
    2N731 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N731 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N731 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N731 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N731 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N731 Unknown Transistor Replacements Scan PDF
    2N731 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N731 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N731 Raytheon Selection Guide 1977 Scan PDF
    2N731 Semico UHF Amplifiers / NPN General Purpose Medium Speed Amplifiers Scan PDF

    2N731 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rca 2n2147

    Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
    Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer


    Original     		PDF BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 rca 2n2147 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200

    2E12

    Abstract: 2N7318D 2N7318H 2N7318R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9240 D, R, H 2N7318D, 2N7318R 2N7318H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 7A, -200V, RDS(on) = 0.720Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRM9240 2N7318D, 2N7318R 2N7318H -200V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 2N7318D 2N7318H 2N7318R

    17741

    Abstract: 2N7316D 2N7316H 2N7316R 2E12 Rad hard MOSFETS in Harris
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9140 D, R, H 2N7316D, 2N7316R 2N7316H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 11A, -100V, RDS(on) = 0.300Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRM9140 2N7316D, 2N7316R 2N7316H -100V, O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 17741 2N7316D 2N7316H 2N7316R 2E12 Rad hard MOSFETS in Harris

    ta17741

    Abstract: 2N7317D 2E12 2N7317H 2N7317R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9140 D, R, H 2N7317D, 2N7317R 2N7317H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 11A, -100V, RDS(on) = 0.315Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRS9140 2N7317D, 2N7317R 2N7317H -100V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD ta17741 2N7317D 2E12 2N7317H 2N7317R

    Untitled

    Abstract: No abstract text available
    Text: 2N7316D1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55


    Original     		PDF 2N7316D1

    2E12

    Abstract: 2N7319D 2N7319H 2N7319R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9240 D, R, H 2N7319D, 2N7319R 2N7319H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 7A, -200V, RDS(on) = 0.735Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRS9240 2N7319D, 2N7319R 2N7319H -200V, O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 2N7319D 2N7319H 2N7319R

    Untitled

    Abstract: No abstract text available
    Text: 2N7317R2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55


    Original     		PDF 2N7317R2

    Untitled

    Abstract: No abstract text available
    Text: 2N7316D3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)11 I(DM) Max. (A) Pulsed I(D)7 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55


    Original     		PDF 2N7316D3

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    2N7313

    Abstract: Rad Hard in MOSFET power p channel mosfet rad hard
    Text: HARRIS SEI UCOND SECTOR m H A R R IS U U H arris rc a • oi • D • OBJECTIVE S E M I C O N D U C T O R • 40E 0Q33Û3M T MHAS 2N7313R, 2N7313H n r-.n I .n REG ISTRATIO N PENDING Available As FRM 9430R, FRM9430H in te r s il ' M3G2271 _ i I 11 1 .5 A .-5 0 0 V


    OCR Scan     		PDF M3G2271 2N7313R, 2N7313H 9430R, FRM9430H 2N7313 Rad Hard in MOSFET power p channel mosfet rad hard

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR bflE D HARRIS SEMI CONDUCT OR REGISTRATION PENDING Currently Available as FRS9240 D, R, H • L»30EE71 0051200 TMT ■ 2N7319D, 2N7319H 2N7319H Radiation Hardened P-Channel Power MOSFETs November 1993 Package Features • HAS 7A, -200V, RDS(on) = 0.735Q


    OCR Scan     		PDF FRS9240 30EE71 2N7319D, 2N7319H -200V, O-257AA 100KRAD 300KRAD 1000KRAD

    Untitled

    Abstract: No abstract text available
    Text: ill H a r r is U U S E M I C O N D U C T O R 2N7311D, 2N7311R 2N731 1H REGISTRATION PENDING Currently Available as FRL9230 D, R, H . • Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, -200V, RDS(on) > 1.300 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF 2N7311D, 2N7311R 2N731 FRL9230 O-205AF -200V, 100KRAD 1000KRAD 3000KRAD

    2N1420

    Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
    Text: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications


    OCR Scan     		PDF 2N731, 2N956, 2N1420, 2N1S07, 2N717, 2N718, 2N718A, 2N730, 2N956 2N1420 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731

    2N7314R

    Abstract: FRL9430 2N7314
    Text: HARRIS SEMICOND SECTOR g u HARRIS ^ HARRIS • •RCA “ ' °• ■ ° GE • MOE D ■ OBJECTIVE ° INTERSIL ° " 430E271 DQ33fl3S 1 Hi HAS 2N7314R, 2N7314H REG ISTRATIO N PENDIN G Available As FRL9430R, FRL9430H —r ^ x O . — r \ o , l - m 1 A ,-5 0 0 V


    OCR Scan     		PDF 430E271 DQ33fl3S 2N7314R, 2N7314H FRL9430R, FRL9430H 2N7314R FRL9430 2N7314

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR m SÖE » HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9230 D, R, H • 43G2271 G 0 M S 7 C11 T71 ■ H A S 2N7312D, 2N7312H 2N7312H December 1992 Features Radiation Hardened P-Channel Power MOSFETs


    OCR Scan     		PDF FRS9230 43G2271 2N7312D, 2N7312H -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: HARRI S SEIHCOND SECTOR SfiE D HARRIS 43G2271 0045ÖGG Ô04 I HAS 2N7318D, 2N7318R 2N7318H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9240 D, R, H Radiation Hardened P-Channel Power MOSFETs December 1992 Features • 7A, -200V, RDS(on)» 0.720Q


    OCR Scan     		PDF 43G2271 2N7318D, 2N7318R 2N7318H FRM9240 -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: H RHARRIS U U S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9230 D, R, H 2N7312D, 2N7312R 2N7312H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • «A, -200V, RDS(On) »1.32Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concept*


    OCR Scan     		PDF FRS9230 2N7312D, 2N7312R 2N7312H O-257AA -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD

    2n731

    Abstract: MOSFET 7H
    Text: ÎIÎ 2N7317D, 2N7317R 2N731 7H H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9140 D, R, H , « Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 11A, -100V, RDS<on) = 0.315il TO-257AA • Second Generation Rad Hard MOSFET Result* From New Design Concepts


    OCR Scan     		PDF 2N7317D, 2N7317R 2N731 FRS9140 -100V, 315il 100KRAD 300KRAD 1000KRAD 3000KRAD MOSFET 7H

    Untitled

    Abstract: No abstract text available
    Text: fft HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9230 D, R, H 2N7310D, 2N7310R 2N7310H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 4A, -200V, RDS(on) * 1.30Q TO-2Q4AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRM9230 2N7310D, 2N7310R 2N7310H -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD

    2n731

    Abstract: 2N718 2n1413 2n697
    Text: TYPES 2M6ifo. ¿Wise* 8. 2N730, 2N731, 7N9S6 :^ v i? n 2N1613. 2NT711 N-P-N SILICON TRANSISTORS ‘/ . K W . ; > . M 1 ¿ m b ? m w k , - l ; . B U L L E T I N N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed lor


    OCR Scan     		PDF 2N730, 2N731, 2N1613. 2NT711 2N717, 2N718, 2N718A, 2N956 2n731 2N718 2n1413 2n697

    transistor c 3205

    Abstract: SI 3205 transistor 3205 equivalent 3205 transistor 3205 ic
    Text: m UU H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9240 D, R, H 2N7319D, 2N7319R 2N7319H Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 7A, -MOV, RDS(on) a 0.735Q TO-257AA • Second Generation Rad Hard MOSFET Result* From New Design Concepts


    OCR Scan     		PDF FRS9240 2N7319D, 2N7319R 2N7319H O-257AA 100KRAD 1000KRAD 3000KRAD 35MeV/mg/cm. transistor c 3205 SI 3205 transistor 3205 equivalent 3205 transistor 3205 ic

    Untitled

    Abstract: No abstract text available
    Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9240 D, R, H 2N7318D, 2N7318R 2N7318H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 7A, -200V, RDS(on) = 0.720Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRM9240 2N7318D, 2N7318R 2N7318H O-204AA -200V, 100KRAD 300KRAD 1000KRAD 3000KRAD

    2N7315

    Abstract: 2N7315R 2N7315H
    Text: HARRIS SEMICOND SECTOR ff! HARRIS U a U HARRIS S E M I C O N D U C T O R RCA GE MGE D OBJECTIVE 4302271 003303b 3 HH AS 2N7315R, 2N7315H REGISTRATION PENDING Available As FRS9430R, FRS9430H IN TER SIL 1.5A, -500V T - S rt- 1 ! RDS on =7.62n This Objective Data Sheet Represents the Proposed Device Performance.


    OCR Scan     		PDF 003303b 2N7315R, 2N7315H FRS9430R, FRS9430H -500V 2N7315 2N7315R 2N7315H

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SENICOND SECTOR m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL9230 D, R, H SflE D • 4305271 0045787 540 H H A S 2N7311D, 2N7311H 2N7311H Radiation Hardened P-Channel Power MOSFETs December 1992 l ° l Package Features • 3A, -200V, RDS(on) > 1.30Q


    OCR Scan     		PDF FRL9230 2N7311D, 2N7311H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD