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    YAGEO Corporation BUK436-60A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUK436-60A 32
    • 1 $7.776
    • 10 $5.7024
    • 100 $5.184
    • 1000 $5.184
    • 10000 $5.184
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    BUK436 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUK436-1000A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK436-1000A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK436-1000B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK436-1000B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK436-1000B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK436-1000B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK436-1000B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK436-100A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK436-100A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK436-100A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK436-100A Philips Components Datasheet Library 1989 Scan PDF
    BUK436-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK436-100A Philips Semiconductors PowerMOS Transistor Scan PDF
    BUK436-100B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK436-100B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK436-100B Philips Components Datasheet Library 1989 Scan PDF
    BUK436-100B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK436-100B Philips Semiconductors PowerMOS Transistor Scan PDF
    BUK436-200A Philips Semiconductors PowerMOS transistor Original PDF
    BUK436-200A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BUK436 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUK436-1000B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)30 I(D) Max. (A)3.1 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100 IDM Max (@25øC Amb)12 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)


    Original     		PDF BUK436-1000B

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BUK436-800A

    Abstract: BUK436-800B BUK456-800A
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF OT429 BUK436W-800A/B BUK436 -800A -800B BUK436-800A BUK436-800B BUK456-800A

    BUK456-1000A

    Abstract: BUK456-1000 BUK436W-1000B BUK456-100 to247 f BUK456-1000B
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    Original     		PDF OT429 BUK436W-1000B BUK456-1000A BUK456-1000 BUK436W-1000B BUK456-100 to247 f BUK456-1000B

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    HA 100B

    Abstract: BUK436-100A BUK436-100B BUK436
    Text: BUK436-100A BUK436-100B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope, me device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436-100A BUK436-100B BUK436 -100A -100B OT-93; s/v-29/ M89-1145/RST HA 100B BUK436-100A BUK436-100B

    BUK416-100BE

    Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
    Text: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93


    OCR Scan     		PDF BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A BUK451-100B BUK441-100B BUK451-100A BUK441-100A BUK452-100B BUK416-100BE 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION PINNING - SOT93 PIN SYMBOL PARAMETER Drain-source voltage Drain current DC Total power dissipation Drain-source on-state résistance BUK436 I* r lol °DS(ON) PIN CONFIGURATION


    OCR Scan     		PDF BUK436-60A/B BUK436

    BUK436

    Abstract: BUK436-200B 200B iran BUK436-200A
    Text: Philips Components BUK436-200A BUK436-200B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Pow er Supplies SM PS , motor control, welding,


    OCR Scan     		PDF BUK436-200A BUK436-200B BUK436 -200A -200B OT-93; M89-1144/RST BUK436-200B 200B iran BUK436-200A

    BUK436-50B

    Abstract: BUK436-50A 7725A
    Text: Philips Components BUK436-50A BUK436-50B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancem ent m ode field-effect power transistor in a lastic envelope. he device is intended for use in Switched M ode Pow er Supplies S M P S , motor control, welding,


    OCR Scan     		PDF BUK436-50A BUK436-50B BUK436 M89-1146/RST BUK436-50B BUK436-50A 7725A

    BUK436-50A

    Abstract: BUK436-50B SOT93 package
    Text: N AMER P H I L I P S / D I S C R E T E HSE D Hi bfci53ci31 0 0 2 0 2 0 5 T Hi PowerMOS transistor BUK436-50A BUK436-50B T -3 « M GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic envelope. The device is intended to r use in


    OCR Scan     		PDF Q0202BS BUK436-50A BUK436-50B BUK436 OT-93; T-39-T3 SOT93 package

    BUK436-1000B

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors BUK436-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436-1000B BUK436-1000B

    Untitled

    Abstract: No abstract text available
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel fntancam entpiode field-effectporor transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436-800A/B BUK436 -800A -800B

    0030456

    Abstract: 100-P BUK436-60A BUK436-60B
    Text: N AUER P H I L I P S / D I S C R E T E J> b^E • bbSBTai 0D3D455 Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0D3D455 BUK436-60A/B BUK436 bbS3T31 S/V-10/ 0030456 100-P BUK436-60A BUK436-60B

    MN1 transistor

    Abstract: BUK436-200B LTO 100 F BUK436-200A
    Text: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 7110fl5b BUK436-200A/B BUK436 -200A -200B 71106Eb MN1 transistor BUK436-200B LTO 100 F BUK436-200A

    BUK436-100A

    Abstract: BUK436-100B
    Text: N AMER P H I L I P S / D I S C R E T E b*lE D • bbSa^Bl 0a3QMb0 T l f l ■ APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK436-100A/B -100A -100B 00304b4 BUK436-1OOA/B BUK436-100A BUK436-100B

    c17f

    Abstract: IE-02 BUK436-100A BUK436-100B
    Text: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in


    OCR Scan     		PDF 7110fl2b c17fl BUK436-100A/B BUK436 -100A -100B /C-\15 c17f IE-02 BUK436-100A BUK436-100B

    Mosfet catalogue

    Abstract: mosfet 200A buk444 200B 220AB
    Text: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs P O W E R S E M IC O N D U C T O R S POWERMOS TRANSISTORS INCLUDING TOPFETS ^D S ^ D S o n (V) (O) 100 100 0.9 1.1 200 200 200 200 200 200 200 200 200 200 200


    OCR Scan     		PDF OT223 OT186 O-220AB OT404 Mosfet catalogue mosfet 200A buk444 200B 220AB

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


    OCR Scan     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94

    BUK446-800B

    Abstract: BUK551-100A BUK583 BUK555 600b BUK5
    Text: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B


    OCR Scan     		PDF BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B BUK444-600B BUK455-600B BUK445-600B BUK457-600B BUK437-600B BUK454-800B BUK446-800B BUK551-100A BUK583 BUK555 600b BUK5

    Untitled

    Abstract: No abstract text available
    Text: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effed power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK436W-1000B OT429

    BUK436-60A

    Abstract: 134 T31 100-P BUK436-60B
    Text: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711D6Sb BUK436-60A/B BUK436 drai11062b BUK436-60A 134 T31 100-P BUK436-60B

    Untitled

    Abstract: No abstract text available
    Text: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in


    OCR Scan     		PDF BUK436-60A/B BUK436