TT425N
Abstract: thyristor 1800V itav 20 TD425N 4650N DT425N KM17 thyristor TT 46 N 12
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT425N TT425N. TD425N DT425N TD425N.-A Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TT425N
TT425N.
TD425N
DT425N
TD425N.
4650N)
TT425N
thyristor 1800V itav 20
TD425N
4650N
DT425N
KM17
thyristor TT 46 N 12
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4650N
Abstract: DT425N KM17 TD425N TT425N
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT425N TT425N. TD425N DT425N TD425N.-A Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TT425N
TT425N.
TD425N
DT425N
TD425N.
11suant
4650N
DT425N
KM17
TD425N
TT425N
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4650N
Abstract: DT425N KM17 TD425N TT425N
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT425N TT425N. TD425N DT425N TD425N.-A Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TT425N
TT425N.
TD425N
DT425N
TD425N.
11hnical
4650N
DT425N
KM17
TD425N
TT425N
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4650N
Abstract: DT425N KM17 TD425N TT425N thyristor 1800V itav 20
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT425N TT425N. TD425N DT425N TD425N.-A Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TT425N
TT425N.
TD425N
DT425N
TD425N.
11cation
4650N
DT425N
KM17
TD425N
TT425N
thyristor 1800V itav 20
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thyristor 1800V itav 20
Abstract: No abstract text available
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TZ425N TZ425N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TZ425N
TZ425N
4650N)
thyristor 1800V itav 20
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4650N
Abstract: KM17 TZ425N
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TZ425N TZ425N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TZ425N
4650N
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TZ425N
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Abstract: No abstract text available
Text: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TZ425N TZ425N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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4650N
Abstract: KM17 TZ425N
Text: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TZ425N TZ425N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TZ425N
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4650N
Abstract: KM17 TZ425N TZ425
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TZ425N TZ425N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT250N Key Parameters VDRM / VRRM 1200 – 1800 V ITAVM 250 A TC=85 °C ITSM VT0 7000 A 3570A (TC=55°C) 0,8 V rT 0,7 mΩ RthJC 0,124 K/W Base plate 50 mm
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Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT210N Key Parameters VDRM / VRRM 1200 – 1800 V ITAVM 210 A TC=85 °C ITSM VT0 6600 A 3570A (TC=55°C) 1,0 V rT 0,85 mΩ RthJC 0,124 K/W Base plate width
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TT210N
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W4DC105
Abstract: LP 8029 TR C458 w4dc162 W4DC132 NCT200 Thyristor w4dc162 w4dc162 pm W4DA250 w4da105
Text: Note: The data supplied in the enclosed tables is for general reference only. As data was collected from a number of sources, Richardson Electronics, Ltd. and its affiliates are not liable for its accuracy. Richardson Electronics, Ltd. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Richardson Electronics makes no warranty, representation or guarantee regarding
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comp70
90461435/WF5000/CR
W4DC105
LP 8029
TR C458
w4dc162
W4DC132
NCT200
Thyristor w4dc162
w4dc162 pm
W4DA250
w4da105
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TT162N16KOF-K
Abstract: class d Sinus inverter circuit diagram schematics 3 phase sinus inverters circuit diagram igbt GTO thyristor 100A, 400V T930S18TMC vt laser diode DVD lg RC snubber thyristor design SCR 400V 5000A pulsed powerblock tt 60 N powerblock tt 93
Text: Application Note, V2.2, March 2006 AN2006-03 Technical Information Bipolar Semiconductors Seite 1 von 87 Edition 2006-05-22 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2006. All Rights Reserved. LEGAL DISCLAIMER
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AN2006-03
TT162N16KOF-K
class d Sinus inverter circuit diagram schematics
3 phase sinus inverters circuit diagram igbt
GTO thyristor 100A, 400V
T930S18TMC vt
laser diode DVD lg
RC snubber thyristor design
SCR 400V 5000A pulsed
powerblock tt 60 N
powerblock tt 93
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2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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FS450R12KE3 S1
Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.
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E-103,
FS450R12KE3 S1
infineon pmb 6850 e
bsm25gp120 b2
HIGH VOLTAGE ISOLATION DZ 2101
infineon pmb 6850
Thyristor eupec POWERBLOCK
2SD 1460
pmb 6850
V61-14
BSM35GP120
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FS20R06XE3
Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors
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D-59581
FS20R06XE3
aeg powerblock tt
bsm25gp120 b2
thyristor aeg
aeg powerblock tt 32 n
STR W 6856 DATA SHEET
HIGH VOLTAGE ISOLATION DZ 2101
FS450R12KE3 S1
MR 4710 IC
aeg powerblock dd
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FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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