RD02MUS1
Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD02MUS1
175MHz
520MHz
RD02MUS1
175MHz,
520MHz
175MHz)
520MHz)
T112
UHF transistor FET
RD02MUS1-101
3M Touch Systems
transistor J17
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RD07MVS1
Abstract: RD07MVS1-101 T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
520MHz
175MHz)
520MHz)
RD07MVS1-101
T112
3M Touch Systems
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PDF
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RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS1B
175MHz
520MHz
520MHz
175MHz)
520MHz)
RD07MVS1B
RD07MVS1
T112
3M Touch Systems
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DIODE GP 704
Abstract: RD12MVP1 micro strip line
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a 7.0+/-0.2 0.2+/-0.05 0.65+/-0.2 RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power
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RD12MVP1
175MHz,
RD12MVP1
175MHz
175MHz)
DIODE GP 704
micro strip line
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RD01MUS1-101
Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
c111m
RD01MSU1
3M Touch Systems
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PDF
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RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
transistor jc 817
gp 520 diode
gp 817
RF POWER TRANSISTOR
f763
transistor I 17-13 0773
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RD07MVS1
Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101
T112
07MVS1
3080D
RD07MVS
Rd07mvs1101
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GP 839 DIODE
Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.
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RD01MUS2
520MHz
520MHz
RD01MUS2
GP 839 DIODE
GP 809 DIODE
GP 841 Diode
MOS FET 1127
RF Transistor s-parameter vhf
RD01MUS2-101
t06 TRANSISTOR
5343 transistor
transistor M 839
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RD07MVS1-101
Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
175MHz
520MHz
RD07MVS1
RD07MVS1-101,
RD07MVS1-101
T112
ID-750
RD07M
D07MVS1
3M Touch Systems
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PDF
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rd15hvf
Abstract: RD15HVF1 RD15HVF1-101 RD15HV rd15h 100OHM Zo-50o transistor d1 391 rd15hvf11 zg j9
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W OUTLINE 3.2+/-0.4 2 9+/-0.4 High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
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RD15HVF1
175MHz520MHz
175MHz
520MHz
RD15HVF1
rd15hvf
RD15HVF1-101
RD15HV
rd15h
100OHM
Zo-50o
transistor d1 391
rd15hvf11
zg j9
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RD01MUS2
Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS2
520MHz
RD01MUS2
520MHz
RD01MUS2-101
GP 839 DIODE
FAN 3792
MOS FET 1127
GP 809 DIODE
IDQ100
01LOT
0703 transistor
3M Touch Systems
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PDF
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RD07MUS2B
Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
RD07MUS
RD07MUS2
f763
gp 817
329J
RD07M
mitsubishi MOSFET
jc 817
j-120
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PDF
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mosfet 1412
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 6.0+/-0.15 0.2+/-0.05 specifically designed for VHF/UHF RF power RD02MUS1B improved a drain surge than RD02MUS1 by optimizing MOSFET structure.
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
175MHz,
175MHz)
520MHz)
mosfet 1412
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PDF
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MARK "326" FET
Abstract: transistor 3669
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
05Electric
Oct2011
MARK "326" FET
transistor 3669
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GP 809 DIODE
Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from
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RD01MUS2B
527MHz
RD01MUS2B
15dBTyp,
527MHz
Nov2011
GP 809 DIODE
GP 839 DIODE
4406 mosfet
diode zener 7.2v
RD01MUS2B-101
gp 520 diode
diode gp 805
mosfet vhf power amplifier
GP 007 DIODE
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RD16HHF1
Abstract: RD16HHF RD16HHF1 application notes RD16HHF1-101 RD16H PO-20W
Text: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.
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RD16HHF1
30MHz
RD16HHF1
30MHz
RD16HHF1-101
Oct2011
RD16HHF
RD16HHF1 application notes
RD16H
PO-20W
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PDF
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RD02MVS1
Abstract: RD02MUS1B RD02MUS1 T112 mosfet 1412 6D20 mosfet 4501
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 1.0+/-0.05 2.0+/-0.05 1 4.9+/-0.15
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RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
RD02MVS1
T112
mosfet 1412
6D20
mosfet 4501
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PDF
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CA30
Abstract: 330 63V 125 Wet tantalum capacitor
Text: CA30 Wet Tantalum Capacitor Ⅰ Features Small units with high stable performance, lower current leakage & dissipation factor, stable frequency and temperature and long life. Suitable for military equipment, computer, telephone and other electronic products.
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than85)
CA30
330 63V 125
Wet tantalum capacitor
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E
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RD02LUS2
470MHz
RD02LUS2
15dBTyp
470MHz
18dBTyp
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mitsubishi top marking
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power
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RD09MUP2
520MHz,
RD09MUP2
520MHz
520MHz)
mitsubishi top marking
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PDF
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rd70huf2
Abstract: RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049
Text: < Silicon RF Power Semiconductors > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 3.61 2.40 3 4 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION For output stage of high power amplifiers in VHF/UHF
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RD70HUF2
175MHz,
530MHz,
RD70HUF2
75Wtyp,
530MHz
84Wtyp,
175MHz
RD70 HUF2
RD70HUF
w18 transistor
MITSUBISHI RF POWER MOS FET rd70
2x500mA
AN-VHF-049
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PDF
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD07MVS2
175MHz
520MHz
RD07MVS2-101
diode gp 434
RD07MVS1
RD07MVS2
T112
07MVS1
PO520
zener gp 434
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PDF
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MAR 618 transistor
Abstract: MAR 737 transistor d 1557 RD06HHF1 transistor 45 f 123 rf transistor mar 8 MITSUBISHI RF POWER MOS FET RD06HHF1-101 Marking TRANSISTOR 737 transistor MAR 231
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz
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RD06HHF1
30MHz
30MHz
RD06HHF1
RD06HHF1-th
MAR 618 transistor
MAR 737
transistor d 1557
transistor 45 f 123
rf transistor mar 8
MITSUBISHI RF POWER MOS FET
RD06HHF1-101
Marking TRANSISTOR 737
transistor MAR 231
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PDF
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MAR 618 transistor
Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
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RD06HVF1
175MHz
175MHz
RD06HVF1
RD06HVFth
MAR 618 transistor
MAR 737
transistor d 1557
transistor mar 618
how to use mos transistor in power circuit
rf transistor mar 8
RD06HVF1-101
100OHM
MITSUBISHI RF POWER MOS FET
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