RD01MUS1-101
Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
c111m
RD01MSU1
3M Touch Systems
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GRM1882C1H100JA01D
Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V
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AN-900-040-A
RD01MUS1
RD07MUS2B
763-870MHz
RD07MUS2B:
086ZE-G"
RD01MUS1:
RD07MUS2B
250mA
GRM1882C1H100JA01D
GRM1882C1H
grm1882c1h4r0cz01d
GRM1882C1H8R0DZ01
GRM1882C1H9R0DZ01D
RPC05-182
LQG11A8N2S00
GRM1882C1H150JA01D
GRM1882C1H120JA01D
GRM1882C1H8R0DZ01D
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RD01MUS1
Abstract: adj 2576
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V
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AN-UHF-060-A
RD01MUS1
RD01MUS1:
135MHz
100mA
527MHz
0mm/50
AN-UHF-060
adj 2576
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RD07MVS1
Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency
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AN-900-006
RD07MVS1
RD01MUS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
764-870MHz
RD07MVS1
17mml
MITSUBISHI APPLICATION NOTE RF POWER
gp 735
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RD01MUS1
Abstract: RD07MVS1B
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.
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AN-900-028-A
RD01MUS1
RD07MVS1B
740-870MHz.
RD07MVS1B:
068YD-G"
RD01MUS1:
RD07MVS1B
740-870MHz
RD01MUS1
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RD07MVS1
Abstract: RD01MUS1
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data
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AN-900-008
RD01MUS1
RD07MVS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
RD07MVS1
740-870MHz
RD01MUS1
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equivalent transistor c 243
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
48MAX
53MAX
equivalent transistor c 243
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2779, transistor
Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
2779, transistor
1348 transistor
RD01MSU1
fet 547
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RD01MUS1
Abstract: 180PF
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019-B Date : 9th Jan. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 RF characteristics data
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AN-UHF-019-B
RD01MUS1
RD01MUS1.
RD01MUS1:
022XA"
136MHz
136MHz)
155MHz
155MHz)
175MHz
180PF
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RD01MUS1
Abstract: RD07MVS1 848/b+5891
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency
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AN-VHF-013Date
RD01MUS1
RD07MVS1
RD01MUS1:
2K291"
RD07MVS1:
031AA"
135-175MHz
RD01MUS1
848/b+5891
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5139 mosfet
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION
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RD01MUS1
520MHz
RD01MUS1
RD01MUS1-101
Oct2011
5139 mosfet
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RD01MUS1-101
Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
RD01MSU1
transistor 636 mitsubishi
epoxi resin
fet 547
1351 transistor
rd01mus1 applications
DD 127 D TRANSISTOR
2779, transistor
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RD01MUS1-101
Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
fet 547
2779, transistor
RD01MSU1
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RD01MUS1
Abstract: D 1556 RD07MVS1
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008-A Date : 7th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band.
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AN-900-008-A
RD01MUS1
RD07MVS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
RD07MVS1
740-870MHz
RD01MUS1
D 1556
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RD01MUS1
Abstract: RD07MVS1
Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006-A Date : 21th Aug. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band.
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AN-900-006-A
RD07MVS1
RD01MUS1
800MHz
RD07MVS1:
031AA"
RD01MUS1:
764-870MHz
RD07MVS1
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
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diode gp 429
Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data
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AN-900-028
RD01MUS1
RD07MVS1B
740-870MHz.
RD07MVS1B:
068YD-G"
RD01MUS1:
RD07MVS1B
740-870MHz
diode gp 429
RD01MUS1
RD07M
RD07MVS
AN-900-028
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RD01MUS1
Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with
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AN-UHF-019
RD01MUS1
RD01MUS1.
RD01MUS1:
022XA"
136MHz
155MHz
175MHz
520MHz
0mm/50
micro strip line
MITSUBISHI APPLICATION NOTE RF POWER
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rd01mus1 applications
Abstract: RD01MUS1-101 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
RD01MUS1-101
rd01mus1 applications
3M Touch Systems
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RD01MUS1
Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
Text: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.
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AN-GEN-038
RD01MUS1
RD02MUS1
RD07MVS1
RD30HVF1
RD30HUF1
100pF
/100pF
RD01MUS1
RD02MUS1
RD30HVF1
ANGEN038
1.5kohm
RD07MVS1
RD30HUF1
mitsubishi rf
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
Oct2011
marking 7W 66
AN-UHF-105
transistor jc 817
AN-UHF-116
AN-UHF116
GP 830 diode
diode gp 424
AN-900-041
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
RD07MUS2
RD07MUS
diode gp 424
RD07M
AN-VHF-046
AN-UHF-116
f763
AN-UHF-106
AN-VHF-053
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transistor 1971 mitsubishi
Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
0-48MAX
OT-89
25deg
TIO750
transistor 1971 mitsubishi
MOS 6520 40 pin
marking 4338 sot89
2493 transistor
i 2708
9622 transistor
MOS 6581
an 17827
MOS marking 843
Mitsubishi 3994
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transistor 16933
Abstract: No abstract text available
Text: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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25th/Nov.
RD01MUS1
520MHz
RD01MUS1
520MHz
25deg
transistor 16933
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