Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RD01MUS1 Search Results

    SF Impression Pixel

    RD01MUS1 Price and Stock

    Mitsubishi Electric RD01MUS1-T113

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,600MA I(D),SOT-89 (Also Known As: RD01MUS1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RD01MUS1-T113 640
    • 1 $3.456
    • 10 $3.456
    • 100 $3.456
    • 1000 $1.4256
    • 10000 $1.4256
    		Buy Now
    RD01MUS1-T113 640
    • 1 $3.456
    • 10 $3.456
    • 100 $3.456
    • 1000 $1.4256
    • 10000 $1.4256
    		Buy Now

    RD01MUS1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RD01MUS1 Mitsubishi RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W Original PDF
    RD01MUS1 Mitsubishi Silicon MOSFET Power Transistor 520 MHz, 1 W Original PDF

    RD01MUS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2779, transistor

    Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547

    RD01MUS1

    Abstract: 180PF
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019-B Date : 9th Jan. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 RF characteristics data


    Original     		PDF AN-UHF-019-B RD01MUS1 RD01MUS1. RD01MUS1: 022XA" 136MHz 136MHz) 155MHz 155MHz) 175MHz 180PF

    RD01MUS1

    Abstract: RD07MVS1 848/b+5891
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency


    Original     		PDF AN-VHF-013Date RD01MUS1 RD07MVS1 RD01MUS1: 2K291" RD07MVS1: 031AA" 135-175MHz RD01MUS1 848/b+5891

    5139 mosfet

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION


    Original     		PDF RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 Oct2011 5139 mosfet

    RD01MUS1-101

    Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 RD01MSU1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor

    RD01MUS1-101

    Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 fet 547 2779, transistor RD01MSU1

    RD01MUS1

    Abstract: D 1556 RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008-A Date : 7th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band.


    Original     		PDF AN-900-008-A RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1 D 1556

    amp 827 578

    Abstract: 2K291 RD01MUS1 RD07MVS1 amp 827 578 3 pin
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013-A Date : 11th Nov. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics


    Original     		PDF AN-VHF-013-A RD01MUS1 RD07MVS1 RD07MVS1 RD01MUS1: 2K291" RD07MVS1: 031AA" 135-175MHz amp 827 578 2K291 RD01MUS1 amp 827 578 3 pin

    RD01MUS1

    Abstract: RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006-A Date : 21th Aug. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band.


    Original     		PDF AN-900-006-A RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION


    Original     		PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101

    diode gp 429

    Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data


    Original     		PDF AN-900-028 RD01MUS1 RD07MVS1B 740-870MHz. RD07MVS1B: 068YD-G" RD01MUS1: RD07MVS1B 740-870MHz diode gp 429 RD01MUS1 RD07M RD07MVS AN-900-028

    RD01MUS1

    Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with


    Original     		PDF AN-UHF-019 RD01MUS1 RD01MUS1. RD01MUS1: 022XA" 136MHz 155MHz 175MHz 520MHz 0mm/50 micro strip line MITSUBISHI APPLICATION NOTE RF POWER

    rd01mus1 applications

    Abstract: RD01MUS1-101 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original     		PDF RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 rd01mus1 applications 3M Touch Systems

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		PDF 30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1

    AN-UHF-098

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15


    Original     		PDF RD07MUS2B 175MHz 527MHz 870MHz RD07MUS2B VHF/UHF/870MHz 175MHz) 527MHz) 870MHz) AN-UHF-098

    RD01MUS1

    Abstract: RD02MUS1 RD07MVS1 RD30HUF1 RD30HVF1 1.5kohm
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-038-B Date : 16 th Sep. 2003 Rev. date : 22th Jun. 2010 Prepared : S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Test result of surge tolerance for RD-series


    Original     		PDF AN-GEN-038-B RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1 100pF /100pF RD01MUS1 RD02MUS1 RD07MVS1 RD30HUF1 RD30HVF1 1.5kohm

    RD01MUS1

    Abstract: RD07MVS1 RD02MUS1 RD30HUF1 RD30HVF1 ANGEN038
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-038-A Date : 16 th Sep. 2003 Rev.date : 7th Jan. 2010 Prepared : S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Test result of surge tolerance for RD-series


    Original     		PDF AN-GEN-038-A RD01MUS1 RD02MUS1 RD07MVS1 RD30HVF1 RD30HUF1 100pF /100pF RD01MUS1 RD07MVS1 RD02MUS1 RD30HUF1 RD30HVF1 ANGEN038