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    Mitsubishi Electric RD07MVS1-501

    RF-MOSFET 7.2V 175/520MHz 7W SLP-Pkg.
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    RD07MVS Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RD07MVS1 Mitsubishi Silicon MOSFET Power Transistor, 175 MHz, 520 MHz, 7 W Original PDF
    RD07MVS1-101 Mitsubishi Silicon MOSFET Power Transistor,175MHz,520MHz,7W Original PDF
    RD07MVS1B Mitsubishi Silicon MOSFET Power Transistor,175MHz,520MHz,7W Original PDF
    RD07MVS1-T112 Mitsubishi Silicon MOSFET Power Transistor,175MHz,520MHz,7W Original PDF
    RD07MVS2 Mitsubishi Silicon MOSFET Power Transistor,175MHz,520MHz,7W Original PDF

    RD07MVS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		PDF RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems

    RD07MVS1

    Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101

    RD07MVS1

    Abstract: skam 199j 329J
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:


    Original     		PDF AN-UHF-018-C RD07MVS1 RD07MVS1. RD07MVS1: 025XA" 031AA" 470MHz 136MHz 136MHz) 155MHz skam 199j 329J

    RD07MVS1-101

    Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems

    RD07MVS1

    Abstract: ic 453 8p
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) ic 453 8p

    RD07MVS1

    Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency


    Original     		PDF AN-900-006 RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735

    RD07MVS1

    Abstract: micro strip line
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and


    Original     		PDF AN-UHF-018-B RD07MVS1 RD07MVS1. RD07MVS1: 025XA" 031AA" 470MHz 136MHz 136MHz) 155MHz micro strip line

    diode gp 434

    Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2-101 diode gp 434 RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434

    taiyosya

    Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.


    Original     		PDF AN-UHF-085-A RD01MUS2 RD07MVS1B RD01MUS2: RD07MVS1B: 068YD" 400-470MHz RPC03 taiyosya grm188r11h RD01MUS2 GRM1882 GRM2162C1H GRM1882C1H GRM2162C GRM2162C1H470GD01E

    RD01MUS1

    Abstract: RD07MVS1B
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.


    Original     		PDF AN-900-028-A RD01MUS1 RD07MVS1B 740-870MHz. RD07MVS1B: 068YD-G" RD01MUS1: RD07MVS1B 740-870MHz RD01MUS1

    RD07MVS1

    Abstract: RD01MUS1
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data


    Original     		PDF AN-900-008 RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES


    Original     		PDF RD07MVS1 175MHz 520MHz 520MHz 520MHz) 175MHz)

    MAR 527 transistor

    Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B-101, MAR 527 transistor RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor

    RD07MVS2

    Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05


    Original     		PDF RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS2 RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434

    RD07MVS1

    Abstract: transistor t06 19 transistor t06 RF Transistor s-parameter 501 mosfet transistor transistor 5508
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) transistor t06 19 transistor t06 RF Transistor s-parameter 501 mosfet transistor transistor 5508

    4538 equivalent

    Abstract: adj 2576 RD07MVS1 ire 530 AN-UHF-027-C
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-027-C Date : 16th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 RF characteristics data


    Original     		PDF AN-UHF-027-C RD07MVS1 RD07MVS1. RD07MVS1: 031AA" 450-520MHz 450-520MHz) 4538 equivalent adj 2576 ire 530 AN-UHF-027-C

    diode gp 434

    Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)


    Original     		PDF RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) diode gp 434 RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE

    RD01MUS1

    Abstract: RD07MVS1 848/b+5891
    Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency


    Original     		PDF AN-VHF-013Date RD01MUS1 RD07MVS1 RD01MUS1: 2K291" RD07MVS1: 031AA" 135-175MHz RD01MUS1 848/b+5891

    RD07MVS2

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)


    Original     		PDF RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) Oct2011

    RD01MUS1

    Abstract: D 1556 RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008-A Date : 7th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band.


    Original     		PDF AN-900-008-A RD01MUS1 RD07MVS1 800MHz RD07MVS1: 031AA" RD01MUS1: RD07MVS1 740-870MHz RD01MUS1 D 1556

    amp 827 578

    Abstract: 2K291 RD01MUS1 RD07MVS1 amp 827 578 3 pin
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013-A Date : 11th Nov. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics


    Original     		PDF AN-VHF-013-A RD01MUS1 RD07MVS1 RD07MVS1 RD01MUS1: 2K291" RD07MVS1: 031AA" 135-175MHz amp 827 578 2K291 RD01MUS1 amp 827 578 3 pin

    RD01MUS1

    Abstract: RD07MVS1
    Text: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006-A Date : 21th Aug. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band.


    Original     		PDF AN-900-006-A RD07MVS1 RD01MUS1 800MHz RD07MVS1: 031AA" RD01MUS1: 764-870MHz RD07MVS1

    GP4060

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.


    Original     		PDF RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) Oct2011 GP4060