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Mitsubishi Electric RD07MVS1-501 RF-MOSFET 7.2V 175/520MHz 7W SLP-Pkg.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
GLYN GmbH & Co. KG	RD07MVS1-501		275			1 - 10 - 100 - 1000 - 10000 -	Get Quote

D07MVS1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RD07MVS1 Abstract: RD07MVS1-101 T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, D07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING D07MVS1 is a MOS FET type transistor	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems
RD07MVS1 Abstract: RD07MVS1B T112 3M Touch Systems Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, D07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05	Original	PDF	RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems
RD07MVS1-101 Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, D07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING D07MVS1 is a MOS FET type transistor	Original	PDF	RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems
rd07mvs1b101 Abstract: 3M Touch Systems D07MVS1 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, D07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05	Original	PDF	RD07MVS1B 175MHz 520MHz RD07MVS1B RD07MVS1 175MHz) 520MHz) rd07mvs1b101 3M Touch Systems D07MVS1
RD07MVS2 Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05	Original	PDF	RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS2 RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
diode gp 434 Abstract: RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 0.22 2.0+/-0.05 1.0+/-0.05 2 3.5+/-0.05 1 3 (0.25) INDEX MARK (Gate)	Original	PDF	RD07MVS2 175MHz 520MHz 520MHz 175MHz) 520MHz) diode gp 434 RD07MVS2 diode zener 7.2v RD07MVS1 T112 318 MARKING DIODE
RD07MVS1B Abstract: transistor t06 19 RD07MVS1B-101 RD07MVS1 T112 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, D07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in	Original	PDF	RD07MVS1B 175MHz 520MHz RD07MVS1B-101, RD07MVS1B transistor t06 19 RD07MVS1B-101 RD07MVS1 T112
3M Touch Systems Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05	Original	PDF	RD07MVS2 175MHz 520MHz RD07MVS2 175MHz) 520MHz) 3M Touch Systems