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    175MHZ Search Results

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    EVAL-ADAU1446EBZ Analog Devices Evaluation BD 175MHZ SigmaDSP, Visit Analog Devices Buy
    ADAU1446YSTZ-3A-RL Analog Devices 175MHZ SigmaDSP,no SRCs Visit Analog Devices Buy
    ADAU1446YSTZ-3A Analog Devices 175MHZ SigmaDSP,no SRCs Visit Analog Devices Buy
    EVAL-ADAU1442EBZ Analog Devices Evaluation BD 175MHZ SigmaDSP, Visit Analog Devices Buy
    ADAU1445YSVZ-3A Analog Devices 175MHZ SigmaDSP,2x8 SRCs Visit Analog Devices Buy
    ADAU1442YSVZ-3A Analog Devices 175MHZ SigmaDSP,8x2 SRCs Visit Analog Devices Buy
    SF Impression Pixel

    175MHZ Price and Stock

    NXP Semiconductors MRFX1K80H-175MHZ

    MRFX1K80H REF BRD 175MHZ 1560W
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    DigiKey MRFX1K80H-175MHZ Bulk 1
    • 1 $1350
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    Avnet Americas MRFX1K80H-175MHZ Box 10 Weeks 1
    • 1 $1608.75
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    Mouser Electronics MRFX1K80H-175MHZ
    • 1 $1950.05
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    Richardson RFPD MRFX1K80H-175MHZ 1
    • 1 $1550.68
    • 10 $1509.87
    • 100 $1432.58
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    Abracon Corporation ASM-25.175MHZ-ET

    XTAL OSC XO 25.1750MHZ HCMOS TTL
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    DigiKey ASM-25.175MHZ-ET Reel 1,000
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    MtronPTI RASCOPLUS-25.175MHZ

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    Bristol Electronics RASCOPLUS-25.175MHZ 250
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    Nihon Dempa Kogyo Co Ltd TD1145C-25.175MHZ

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    Bristol Electronics TD1145C-25.175MHZ 2,386
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    Not Specified 6N/STD1145C25.175MHZ

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    Bristol Electronics 6N/STD1145C25.175MHZ 25
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    175MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transformer 0-12v

    Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
    Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 transformer 0-12v J101 0-12V 2204B MRF151 Transistor C2 Unelco J101

    VRF141

    Abstract: 28v 30MHZ MRF141 2204B
    Text: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF141 175MHz VRF141 30MHz, 175MHz, MRF141 28v 30MHZ MRF141 2204B

    RA07M1317MS

    Abstract: 135175MHz ra07m1317msa
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317MSA RoHS Compliance , 135-175MHz 6.7W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to


    Original     		PDF RA07M1317MSA 135-175MHz RA07M1317MSA 175-MHz RA07M1317MS 135175MHz

    SD2941-10

    Abstract: EE-19 transformer SD2931-10 VK200
    Text: SD2941-10 RF power transistors HF/VHF/UHF N-channel MOSFETs General features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175W min. with 15dB gain @ 175MHz ■ Low RDS on ■ Thermally enhanced packaging for lower


    Original     		PDF SD2941-10 175MHz SD2941-10 SD2931-10. EE-19 transformer SD2931-10 VK200

    MRF151G

    Abstract: VRF151G 2204B
    Text: VRF151G 50V, 300W, 175MHz RF POWER VERTICAL MOSFET The VRF151G is designed for broadband commercial and military applications at frequencies to 175MHz. The high power, high gain, and broadband performance of this device make possible solid state transmitters for FM broadcast


    Original     		PDF VRF151G 175MHz VRF151G 175MHz. 175MHz, MRF151G MRF151G 2204B

    blf177

    Abstract: 2204B MRF151 VRF152
    Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original     		PDF VRF152 175MHz VRF152 30MHz, 175MHz, MRF151/ BLF177/ SD2941 blf177 2204B MRF151

    RA30H1317M

    Abstract: RA30H1317M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA30H1317M 135-175MHz RA30H1317M 30-watt 175-MHz 24Jan RA30H1317M-101

    RD12MVP1

    Abstract: RD12MVS1 2040D
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V


    Original     		PDF AN-VHF-034-B RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/17meter) RD12MVS1 2040D

    RD02MUS1

    Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


    Original     		PDF RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems

    RA30H1317M1

    Abstract: No abstract text available
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA30H1317M1 135-175MHz RA30H1317M1 30-watt 175-MHz

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


    Original     		PDF RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems

    RD30HVF1

    Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD30HVF1 175MHz RD30HVF1 175MHz RD30HVF1-101 RD30HVF1-101 rf power transistor rd30hvf1 100OHM

    RA08H1317

    Abstract: RA08H1317M RA08H1317M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA08H1317 RA08H1317M 08H1317M RoHS Compliance , 135-175MHz 8W 12.5V, 2 stage Amp. For PORTABLE RADIO DESCRIPTION The RA08H1317M is a 8-watt RF MOSFET Amplifier Module


    Original     		PDF RA08H1317M 08H1317 135-175MHz RA08H1317M 175-MHz RA08H1317 RA08H1317M-101

    RD07MUS2B

    Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


    Original     		PDF RD07MUS2B 175MHz 527MHz RD07MUS2B 175MHz) 527MHz) 870MHz) transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773

    NPN 2SC2782

    Abstract: transistor 2sc2782 2SC2782
    Text: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF 2SC2782 175MHz, 2-13C1A 000707EAA1 175MHz NPN 2SC2782 transistor 2sc2782 2SC2782

    NTE342

    Abstract: 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w
    Text: NTE342 Silicon NPN Transistor RF Power Output PO = 6W, 175MHz Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)


    Original     		PDF NTE342 175MHz) NTE342 175MHz 100mA, 600mW, 4 watt VHF transistor 6w "RF Power Amplifiers" transistor power rating 5w

    2SC2640

    Abstract: pj 71
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz


    OCR Scan     		PDF 2SC2640 175MHz, 175MHz 2SC2640 pj 71

    2SC1955

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S59MAX. g ja 4 5 M A X . FEATURES : Output Power : f=175MHz, Po=2.8W (Min. Vcc=13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR


    OCR Scan     		PDF 2SC1955 175MHz, 0S59MAX. 175MHz -30pF 2SC1955

    2SC2178

    Abstract: copper wire
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2178 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=15W Min. ( f=175MHz, VCC=12.5V, Pi=1.3W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pl=1.3W, f=175MHz


    OCR Scan     		PDF 2SC2178 175MHz, 175MHz 8-10H1A l75MHz, 2SC2178 copper wire

    Untitled

    Abstract: No abstract text available
    Text: H IW «' « 2 it C r O S G iT ii V i r g i n 140 Commerce Drive M ontgom eryvilie, PA 18936-1013 le t: 215 631-9840 ^ _ . _ . _ _ SD1018-6 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS . » « . . » » FM GLASS C TRANSISTOR FREQUENCY 175MHz


    OCR Scan     		PDF SD1018-6 230MHz 175MHz SD1018-8

    M57796H

    Abstract: No abstract text available
    Text: □ □ li? E cn =104 • MITSUBISHI RF POWER MODULE M57796H 150-175MHz, 12.5V, 7W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING 42 ±1 37 ± 1 30 ± 1 2-R1.5 & 'S SÍ0.5 ± 0.15 9. 6 ±1 14.7 PIN : ±1 27 .4 ±1 32. 4 ±1 P in : RF INPU T © VB B


    OCR Scan     		PDF M57796H 150-175MHz, DD173D1 M57796H

    33PFX4

    Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
    Text: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING


    OCR Scan     		PDF 2SC2782 175MHz, 2-13C1A 961001EAA2' 33PFX4 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF

    AD848

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES 725MHz Gain Bandwidth - AD849 175MHz Gain Bandwidth - AD848 4.8mA Supply Current 300V/|is Slew Rate 80ns Settling Time to 0.1% for a 10V Step - AD849 Differential Gain: AD848 = 0.07%, AD849 = 0.08% Differential Phase: AD848 = 0.08°, AD849 = 0.04°


    OCR Scan     		PDF 725MHz AD849 175MHz AD848 AD848