RD05MMP1 Search Results

RD05MMP1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
RD05MMP1		Mitsubishi	Transistor Mosfet 40V 3A		Original	PDF

RD05MMP1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MARK "326" FET Abstract: transistor 3669 Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) 05Electric Oct2011 MARK "326" FET transistor 3669
GRM39 Abstract: GRM708 RD05MMP1 diode GP 829 6030D Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GRM39 GRM708 diode GP 829 6030D
TRANSISTOR D 1785 Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) TRANSISTOR D 1785 diode GP 829 transistor 3669 6030D diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
grm708 Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537 Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 GRM39 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz)
gp 542 Abstract: GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H GRM1882C1H8R0DZ01 GRM1882C1H101JA01 1/Diode gp 542 RD05MMP1 GRM1884C1H1R0CZ01 GRM1882C1H151JA01 Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-030-A Date : 25th Sep. ‘07 Rev.date : 30th Jun. 2010 Prepared : H. Sakairi S. Kametani Confirmed SUBJECT: : T.Okawa RD05MMP1 Single-Stage amplifier RF performance at f=800-900MHz,Vdd=7.2V	Original	PDF	AN-900-030-A RD05MMP1 800-900MHz RD05MMP1: 064XA-G RD05MMP1 800-900MHz gp 542 GRM1882C1H4R0CZ Single-Stage amplifier GRM1882C1H GRM1882C1H8R0DZ01 GRM1882C1H101JA01 1/Diode gp 542 GRM1884C1H1R0CZ01 GRM1882C1H151JA01
GP 819 Abstract: No abstract text available Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power	Original	PDF	RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) GP 819
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	PDF	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1