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    TC5310 Search Results

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    TC5310 Price and Stock

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics TC531001CP-F818 363
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    Bristol Electronics TC531024P-15-F538 3
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    Quest Components TC531024P-15-F538 2
    • 1 $50
    • 10 $50
    • 100 $50
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    Toshiba America Electronic Components TC531001CP

    IC,ROM,128KX8,CMOS,DIP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC531001CP 176
    • 1 $15
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    • 100 $6
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    Toshiba America Electronic Components TC531001CF-E568

    128K X 8 MASK PROM, 150 ns, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC531001CF-E568 121
    • 1 $4.5
    • 10 $2.25
    • 100 $1.95
    • 1000 $1.95
    • 10000 $1.95
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    Toshiba America Electronic Components TC531000P

    IC,ROM,128KX8,CMOS,DIP,28PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC531000P 97
    • 1 $15
    • 10 $15
    • 100 $6
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    TC531000P 31
    • 1 $15
    • 10 $10
    • 100 $9.25
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    • 10000 $9.25
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    TC531000P 10
    • 1 $21.0164
    • 10 $18.6812
    • 100 $18.6812
    • 1000 $18.6812
    • 10000 $18.6812
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    TC5310 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC531000AF Toshiba Vintage Memory Datasheet Scan PDF
    TC531000AP Toshiba Vintage Memory Datasheet Scan PDF
    TC531000CF Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0071 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0072 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0073 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0074 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0082 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0083 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0084 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0088 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0089 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0090 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0093 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0094 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0095 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0097 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0098 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-0099 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531000CF-12 Toshiba 1M BIT (128K WORD x 8 BIT) CMOS MASK ROM SILICON GATE CMOS Scan PDF

    TC5310 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


    Original
    MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel PDF

    CX20106A

    Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
    Text: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010


    Original
    GAS105 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE1012 MOC3012 CX20106A GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401 PDF

    TC531024P-12

    Abstract: No abstract text available
    Text: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:


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    TC531024P-12/15 TC531024F-12/15 120ns/150ns, 600mil 40-pin 525mil TC531024P/F TC531024P-12/15, TC531024P-12 PDF

    3A73

    Abstract: No abstract text available
    Text: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at


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    TC531024P/F 120ns 150ns, 600mil 40pin 525mil 3A73 PDF

    50702

    Abstract: TC531024P-15 C-15 DIP40 TC531024F-15
    Text: .iiiiiiiiiiiiiMiwniniiiti^iginililBiiiii11 1M BIT 65,536 W ORD x 16 BIT CMOS MASK ROM DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high


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    TC531024P/F 120ns 150ns, 600mil 40pin 525mil 50702 TC531024P-15 C-15 DIP40 TC531024F-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bé h H| h M i •MÉrifli IH BIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­


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    TC531001CP/CF 120ns 150ns TC531001CP-12, TC531001 PDF

    531024F

    Abstract: G392
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531024P/F-12, -15 1M BIT 65,536 W O R D x 16 B IT C M O S M A S K RO M D ESCRIPTION T h e T C 5 3 1 0 2 4 P /F is a 1,04 8 ,5 7 6 b its re a d only m em ory organ ized a s 65,536 w ords b y 16 b its. T h e T C 5 3 1 0 2 4 P /F is fa b ric a te d u sin g T o sh ib a ’s ad v an ce d C M O S tech n ology w hich p ro v id es the h igh


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    TC531024P/F-12, 40pin TC531024P/F A0-A15 531024F G392 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531001CP/CM2,-15 1M BIT 128K W O R D X 8 BIT C M O S M A S K RO M DESCRIPTION T h e T C 5 3 1 0 0 1 C P /C F is a 1, 048, 576 b its re a d on ly m em ory o rgan ized a s 131, 072 w ords by 8 b its w ith a low b it cost, th u s b e in g su ita b le for u se in p ro g ram m em ory o f m icrop rocessor, an d d a ta


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    TC531001CP/CM2 TC531001CP/CF 120ns 150ns A0-A16 PDF

    TC531000

    Abstract: 531000CP TC531000C
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC531000CP/CF-12,-15 1M BIT 128K W O R D x 8 BIT C O M S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 0 0 0 C P /C F is a 1, 048, 576 b its re a d only m em ory o rgan ized a s 131, 072 w ords b y 8 b its


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    TC531000CP/CF-12 TC531000CP/CF 150ns A0-A16 A0-A15 TC531000 531000CP TC531000C PDF

    TC531000

    Abstract: tc531000cp DIP23-P-60
    Text: iÂ^ÉftÂâfÂÂ WWWmmW0Wm 1M EIT 128K WORD x 3 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­


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    TC531000CP/TC531000CF TC531000CP/CF 120ns 150ns TC531OOOCP/CF--12/15 DIP23-P-600) TC531000 tc531000cp DIP23-P-60 PDF

    203d6

    Abstract: 3A11 A12C TC531001CF TC531001CP
    Text: IH BIT 128K WORD x 8 BIT CMOS Í1ASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­ processor, and data memory, especially character generator. The TC531001CP/CF using


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    TC531001CP/CF TC531001CP TC531001CF 120ns 150ns TC531001CP/CFâ DIP32-P-600) 203d6 3A11 A12C TC531001CF TC531001CP PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC531000CP-12/15 TC531000CF-12/15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT CMOS M ASK ROM Description The T C 5 3 1 0 0 0 C P / C F is a 1,048,576 bit read only m emory organized a s 131,072 w ords by 8 bits. A low bit cost m akes it suitable


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    TC531000CP-12/15 TC531000CF-12/15 TC531OOOCP-12/15, PDF

    ci 4070

    Abstract: Otis technology
    Text: m m m m mmsrnmimsm . 8ÄSI .„¡m R l P  IBi? f f ! ïi ll ll ll ll lÄiliiÄiÄÄliiftÄ m ß WÊS ijj|j| ISS«!11 g ¡Ssii itiWiii j&$RÌl$ÌÌÉ IM EIT (128K WORD x 3 BIT CMOS MA SK ROM S I LICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8


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    TC531000CP/CF TC531000CP/CT' 120ns 150nsOutput TC531OOOCP/CF-12/15 DIP23-P-600) ci 4070 Otis technology PDF

    TC531001CP

    Abstract: No abstract text available
    Text: TOSHIBA TC531001CP-12/15 TC531001CF-12/15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT CMOS MASK ROM D escription The TC531001CP/CF is a 1,048,576 bit read only memory organized as 131,072 words by 8 bits. A low bit cost makes It suitable for use as program memory for microprocessors or for fixed data storage such as a character generator. The TC531001 CP/CF


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    TC531001CP-12/15 TC531001CF-12/15 TC531001CP/CF TC531001 TC531001CP/CF-12 120ns theTC531001CP/CF-15 150ns TC531001CP/ TC531001CP PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


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    J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576 PDF

    TC571000D-15

    Abstract: TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 TC571000D tc571001d h102 d1 tc5710000
    Text: TOSHIBA MOS MEMORY PRODUCTS T C 5 710 0 0 D -15 , -20, -200, -25 T C 5 71 0 0 1D -15 , -20, -200, -25 IDESCRIPTIONI The TC571000D/TC571001D is a 131,072 word * 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC571000D is JEDEC standard pin configuration and the TC571001D is compatible with


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    TC571000D/TC571001D TC571000D TC571001D 30mA/6 150ns/200ns/250ns. TC571000D/TC571001D. TC571001D TC571000D-15 TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 h102 d1 tc5710000 PDF

    af15 cc hen vd

    Abstract: TC531000 571001
    Text: TOSHIBA TC541000AP/AF-12, -15 TC541001AP/AF-12, -15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY Description The T C 5 4 1 0 0 0 A P /A F an d th e T C 5 4 1 0 0 1 A P /A F are 1 3 1 ,0 7 2 w o rd x 8 b it C M O S on e tim e p ro g ra m m a b le read only m em ories


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    TC541000AP/AF-12, TC541001AP/AF-12, TC541000AP/AF af15 cc hen vd TC531000 571001 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


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    41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256 PDF