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    41C4000 Price and Stock

    E-Switch Inc PA441C4000-116

    SWITCH PB SPST 16A 125V
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    DigiKey PA441C4000-116 Bulk 3,000
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    Newark PA441C4000-116 Bulk 3,000
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    RS PA441C4000-116 Bulk 14 Weeks 3,000
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    E-Switch Inc PR141C4000-134

    SWITCH PB SPST 16A 125V
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    DigiKey PR141C4000-134 Bulk 3,000
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    Newark PR141C4000-134 Bulk 3,000
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    EAO AG 45-2844.1C40.006

    CONFIG SW BODY SELECT NON-ILLUM
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    DigiKey 45-2844.1C40.006 Bulk 1
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    RS 45-2844.1C40.006 Bulk 10 Weeks 1
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    TME 45-2844.1C40.006 1
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    Sager 45-2844.1C40.006 1
    • 1 $25.52
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    E-Switch Inc PR141C4000-134-ACC-F03-1

    Pushbutton Switches
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    Mouser Electronics PR141C4000-134-ACC-F03-1
    • 1 $2.54
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    Newark PR141C4000-134-ACC-F03-1 Bulk 3,000
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    Samsung Semiconductor KM41C4000AJP

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    Bristol Electronics KM41C4000AJP 408
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    41C4000 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    41C4000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    41C4000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		KMM584000A 84000A 41C4000AJ 20-pin 30-pin 130ns 84000A- 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


    OCR Scan     		DD131S7 KM41C4000AL 41C4000AL 41C4000AL- 130ns 150ns 100ns 180ns 200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C4000ASL 41C4000ASL 130ns 41C4000ASL- 150ns 41C40OOASL-10 100ns 180ns 20-LEAD PDF

    MT28F400B3WG-8 tcp 41c

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0013140 220 »SnfiK KM 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


    OCR Scan     		41C4000A 130ns 100ns 180ns KM41C4000A Q0131SS 18-LEAD 20-LEAD 001315b MT28F400B3WG-8 tcp 41c PDF

    KM41C4000AJ

    Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
    Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark 41C4000J 41C4000Z KM 41C4000U 41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1


    OCR Scan     		KM41C4000J KM41C4000Z 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 KM44C1OOOJ KM44C1000Z KM41C4000AJ KM44C1000AZ "30 pin simm" KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		KMM584000A 84000A- 84000A-10 100ns 130ns 150ns 180ns 84000A PDF

    594000A

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		KMM594000A 94000A 41C4000AJ 20-pin 30-pin 94000A- 594000A PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C4000ASL 41C4000ASL KM41C4000ASL 18-LEAD 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications


    OCR Scan     		KM41C4000AL 4000AL- 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C 41C4000C/CL/CSL-5 50ns 13ns 90ns 41C4000C/CL/CSL-6 60ns 15ns 110ns 41C4000C/CL/CSL-7 70ns 20ns 130ns 41C4000C/CL7CSL-8


    OCR Scan     		KM41C4000C/CL/CSL KM41C4000C/CL/CSL-5 KM41C4000C/CL/CSL-6 110ns KM41C4000C/CL/CSL-7 130ns KM41C4000C/CL7CSL-8 150ns KM41C4000C/CL/CSL PDF

    km41c4000

    Abstract: No abstract text available
    Text: 41C4000/L CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1C 4 0 0 0 /L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C4000/L 100ns 180ns 20-LEAD km41c4000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5941OOAKN Fast Page Mode Preliminary 4M x9 DRAM SIM M , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION T h e S a m s u n g K M M 5 94 1 OOAKN is a 4 M bit x 9 FEATURES • P e rfo rm an ce R ange: D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e


    OCR Scan     		KMM5941OOAKN 44C4100AK 41C4000CJ PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Mem ory. Its design is optimized for high perform ance applications


    OCR Scan     		KM41C4000ASL 4000ASL- 41C4000ASL- ASL-10 130ns 4000AS 18-LEAD 20-LEAD PDF

    41C4000CJ

    Abstract: No abstract text available
    Text: DRAM MODULE KMM594100AKN Fast Page Mode 4 Mega Byte Preliminary \ 4Mx9 DRAM SIMM , 2K Refresh , 5 V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AKN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AKN consists of two CMOS


    OCR Scan     		KMM594100AKN 24-pin 20-pin 30-pin 41C4000CJ PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory Its design is optimized for high perform ance applications


    OCR Scan     		KM41C4000AL 130ns 4000AL- 150ns 100ns 180ns 18-LEAD 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications


    OCR Scan     		KM41C4000A 41C4000A- 130ns 150ns 100ns 18-LEAD 20-LEAD PDF

    23C1001

    Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
    Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — 41C4000C-7 — 41C4000C-8 41C4000C-5


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM536B100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368100A1 consists of sixteen CMOS


    OCR Scan     		KMM5368100A1/A1G 8Mx36 KMM536B100A1 KMM5368100A1 24-pin 20-pin 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L D ESC RIPTIO N FEATURES • Performance Range' The Sam sung K M M 5364100A is a 4M bit x 36 D ynam ic RAM high density m em ory module. The


    OCR Scan     		KMM5364100A/AG 4Mx36 364100A 24-pin 20-pin 72-pin KMM5364100A PDF

    NG9-2

    Abstract: No abstract text available
    Text: 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C4000AL 41C4000AL 18-LEAD 20-LEAD NG9-2 PDF

    C1000D

    Abstract: No abstract text available
    Text: KM4 1 C 4 0 0 0 D T CMOS DR A M ELECTRONICS 4M X 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


    OCR Scan     		C4000DT 41HJ-Ã KM41C4000DT DQ34DMb C1000D PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC b4E J> • 7 ^ 4 1 4 2 Q013174 b03 ■ 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory.


    OCR Scan     		Q013174 KM41C4000ASL 130ns 4000ASL- 150ns 180ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory. Its design is optimized for high perform ance applications


    OCR Scan     		KM41C4000A 130ns 41C4000A- 100ns 20-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM594000A 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70ns 20ns 130ns KM M 594000A- 8 80ns 20ns 150ns K M M 594000A -10 100ns 25ns 180ns KM M 594000A- 7 • • • • • • •


    OCR Scan     		KMM594000A 130ns 94000A- 150ns 94000A 100ns 180ns PDF