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    SIR876ADP Price and Stock

    Vishay Siliconix SIR876ADP-T1-GE3

    MOSFET N-CH 100V 40A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR876ADP-T1-GE3 Reel 3,000
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    • 10000 $0.675
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    SIR876ADP-T1-GE3 Digi-Reel 1
    • 1 $1.61
    • 10 $1.336
    • 100 $1.0635
    • 1000 $0.76356
    • 10000 $0.76356
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    SIR876ADP-T1-GE3 Cut Tape 1
    • 1 $1.61
    • 10 $1.336
    • 100 $1.0635
    • 1000 $0.76356
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    ES Components SIR876ADP-T1-GE3
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    Vishay Intertechnologies SIR876ADP-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR876ADP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR876ADP-T1-GE3 Reel 9,000 26 Weeks 3,000
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    Mouser Electronics SIR876ADP-T1-GE3
    • 1 $1.65
    • 10 $1.37
    • 100 $1.09
    • 1000 $0.765
    • 10000 $0.726
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    Newark SIR876ADP-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.692
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    SIR876ADP-T1-GE3 Cut Tape 3,000
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    • 1000 $1.01
    • 10000 $1.01
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    SIR876ADP-T1-GE3 Reel 3,000
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    TTI SIR876ADP-T1-GE3 Reel 291,000 3,000
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    TME SIR876ADP-T1-GE3 3,000
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    • 10000 $0.92
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    Avnet Asia SIR876ADP-T1-GE3 30 Weeks 3,000
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    EBV Elektronik SIR876ADP-T1-GE3 29 Weeks 3,000
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    Vishay Huntington SIR876ADP-T1-GE3

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    NexGen Digital SIR876ADP-T1-GE3 1
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    Win Source Electronics SIR876ADP-T1-GE3 105,000
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    • 100 $0.792
    • 1000 $0.528
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    SIR876ADP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR876ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A 8SO Original PDF

    SIR876ADP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIR876

    Abstract: No abstract text available
    Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR876ADP 11-Mar-11 SIR876

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR876ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIR876

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR876

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiR876ADP

    Abstract: SIR876ADP-T1-GE3
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiR876ADP 2002/95/EC SiR876ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs