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    SI4590DY Price and Stock

    Vishay Siliconix SI4590DY-T1-GE3

    MOSFET N/P-CH 100V 3.4A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4590DY-T1-GE3 Digi-Reel 6,430 1
    • 1 $1.34
    • 10 $0.845
    • 100 $1.34
    • 1000 $0.39695
    • 10000 $0.39695
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    SI4590DY-T1-GE3 Cut Tape 6,430 1
    • 1 $1.34
    • 10 $0.845
    • 100 $1.34
    • 1000 $0.39695
    • 10000 $0.39695
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    SI4590DY-T1-GE3 Reel 5,000 2,500
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.35412
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    Vishay Intertechnologies SI4590DY-T1-GE3

    N- AND P-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI4590DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4590DY-T1-GE3 Reel 5,000
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    • 10000 $0.29298
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    Newark SI4590DY-T1-GE3 Cut Tape 4,793 1
    • 1 $0.883
    • 10 $0.76
    • 100 $0.569
    • 1000 $0.569
    • 10000 $0.569
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    SI4590DY-T1-GE3 Reel 5,000
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    • 10000 $0.385
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    TME SI4590DY-T1-GE3 1
    • 1 $0.731
    • 10 $0.566
    • 100 $0.453
    • 1000 $0.412
    • 10000 $0.412
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    EBV Elektronik SI4590DY-T1-GE3 14 Weeks 2,500
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    SI4590DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4590DY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N/P CHAN 100V SO8 DUAL Original PDF

    SI4590DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4590DY www.vishay.com Vishay Siliconix N- and P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) () MAX. 0.057 at VGS = 10 V 100 -100 ID (A) a Qg (TYP.) 5.6 0.072 at VGS = 4.5 V 5 0.183 at VGS = -10 V -3.4 0.205 at VGS = -4.5 V


    Original     		Si4590DY Si459electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4590DY www.vishay.com Vishay Siliconix N- and P-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel RDS(on) () MAX. 0.057 at VGS = 10 V 100 -100 ID (A) a Qg (TYP.) 5.6 0.072 at VGS = 4.5 V 5 0.183 at VGS = -10 V -3.4 0.205 at VGS = -4.5 V


    Original     		Si4590DY Si459electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF