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    SI7454 Price and Stock

    Vishay Siliconix SI7454DP-T1-E3

    MOSFET N-CH 100V 5A PPAK SO-8
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    DigiKey SI7454DP-T1-E3 Cut Tape 13,635 1
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    SI7454DP-T1-E3 Digi-Reel 13,635 1
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    SI7454DP-T1-E3 Reel 9,000 3,000
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    RS SI7454DP-T1-E3 Bulk 3,000
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    Quest Components SI7454DP-T1-E3 1,281
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    SI7454DP-T1-E3 4
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    Vishay Siliconix SI7454FDP-T1-RE3

    N-CHANNEL 100-V (D-S) MOSFET POW
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    DigiKey SI7454FDP-T1-RE3 Cut Tape 7,349 1
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    SI7454FDP-T1-RE3 Reel 6,000 3,000
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    Vishay Siliconix SI7454DDP-T1-GE3

    MOSFET N-CH 100V 21A PPAK SO-8
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    DigiKey SI7454DDP-T1-GE3 Cut Tape 5,528 1
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    SI7454DDP-T1-GE3 Digi-Reel 5,528 1
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    New Advantage Corporation SI7454DDP-T1-GE3 21,000 1
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    Vishay Siliconix SI7454DP-T1-GE3

    MOSFET N-CH 100V 5A PPAK SO-8
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    DigiKey SI7454DP-T1-GE3 Cut Tape 3,000 1
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    SI7454DP-T1-GE3 Digi-Reel 3,000 1
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    SI7454DP-T1-GE3 Reel 3,000 3,000
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    Vishay Siliconix SI7454CDP-T1-GE3

    MOSFET N-CH 100V 22A PPAK SO-8
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    SI7454 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7454CDP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 22A 8-SOIC Original PDF
    SI7454DDP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 21A PPAK SO-8 Original PDF
    Si7454DP Vishay Intertechnology N-Channel 100-V (D-S) MOSFET Original PDF
    SI7454DP Vishay Siliconix MOSFETs Original PDF
    SI7454DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 5A PPAK 8SOIC Original PDF
    SI7454DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 5A PPAK 8SOIC Original PDF

    SI7454 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7454DDP

    Abstract: No abstract text available
    Text: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8


    Original     		PDF Si7454DDP Si7454DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI7454CDP-T1-GE3

    Abstract: Si7454CDP
    Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0305 at VGS = 10 V 22 VDS (V) 100 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm


    Original     		PDF Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 18-Jul-08

    Si7454DP

    Abstract: Si7454DP-T1-E3 Si7454DP-T1-GE3
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7454DP Si7454DP-T1-E3 Si7454DP- 11-Mar-11 Si7454DP-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8


    Original     		PDF Si7454DDP Si7454DDP-T1-Gelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: Si7454CDP
    Text: Si7454CDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7454CDP AN609, 12-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7454DP 07-mm Si7454DP-T1 Si7454DP-T1--E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7454DP Si7454DP-T1-E3 Si7454DP-T1-GE3 11-Mar-11

    Si7454DP

    Abstract: Si7454DP-T1-E3 Si7454DP-T1-GE3
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7454DP Si7454DP-T1-E3 Si7454DP-lectual 18-Jul-08 Si7454DP-T1-GE3

    1.0964

    Abstract: No abstract text available
    Text: Si7454DDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7454DDP AN609, 8794m 2992m 4748m 4380m 0055u 7815m 9613u 0296m 1.0964

    Untitled

    Abstract: No abstract text available
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7454DP 07-mm Si7454DP-T1 Si7454DP-T1--E3 S-51773-Rev. 31-Oct-05

    Si7454DP

    Abstract: Si7454DP-T1
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7454DP 07-mm Si7454DP-T1 Si7454DP-T1--E3 08-Apr-05

    Si7454CDP

    Abstract: Si7454CDP spice
    Text: SPICE Device Model Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7454CDP 18-Jul-08 Si7454CDP spice

    si7454

    Abstract: No abstract text available
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7454DP Si7454DP-T1-E3 Si7454DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7454

    Si7454DP

    Abstract: Si7454DP-T1 Si7454DP-T1-E3
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7454DP 07-mm Si7454DP-T1 Si7454DP-T1--E3 Si7454DP-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7454DP Si7454DP-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7454DDP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si7454DDP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 11-Mar-11

    si7454

    Abstract: Si7454DP S6014
    Text: SPICE Device Model Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7454DP S-60145Rev. 13-Feb-06 si7454 S6014

    Si7454DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7454DP 18-Jul-08

    9015 transistor specification sheet

    Abstract: AN609 Si7454DP 1564465
    Text: Si7454DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7454DP AN609 28-Nov-05 9015 transistor specification sheet 1564465

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8


    Original     		PDF Si7454DDP Si7454DDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7454DP

    Abstract: Si7454DP-T1
    Text: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A)


    Original     		PDF Si7454DP 07-mm Si7454DP-T1 S-31728--Rev. 18-Aug-03