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    SIS990DN Price and Stock

    Vishay Siliconix SIS990DN-T1-GE3

    MOSFET 2N-CH 100V 12.1A PPAK1212
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    DigiKey SIS990DN-T1-GE3 Digi-Reel 12,860 1
    • 1 $1.44
    • 10 $0.907
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    SIS990DN-T1-GE3 Cut Tape 12,860 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
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    SIS990DN-T1-GE3 Reel 6,000 3,000
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    New Advantage Corporation SIS990DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SIS990DN-T1-GE3

    Transistor MOSFET Array Dual N-CH 100V 12.1A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS990DN-T1-GE3)
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    Avnet Americas SIS990DN-T1-GE3 Reel 27 Weeks 3,000
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    SIS990DN-T1-GE3 Reel 27 Weeks 3,000
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    Mouser Electronics SIS990DN-T1-GE3 17,891
    • 1 $1.1
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    Newark SIS990DN-T1-GE3 Cut Tape 14,700 1
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    SIS990DN-T1-GE3 Reel 3,000
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    Bristol Electronics SIS990DN-T1-GE3 2,500
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    TTI SIS990DN-T1-GE3 Reel 36,000 3,000
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    TME SIS990DN-T1-GE3 1
    • 1 $0.751
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    • 100 $0.46
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    Avnet Asia SIS990DN-T1-GE3 29 Weeks 3,000
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    Chip One Stop SIS990DN-T1-GE3 Cut Tape 2,707
    • 1 $0.936
    • 10 $0.589
    • 100 $0.391
    • 1000 $0.327
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    EBV Elektronik SIS990DN-T1-GE3 28 Weeks 3,000
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    SIS990DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS990DN-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 100V 12.1A 1212-8 Original PDF

    SIS990DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS990DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS990DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS990DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		SiS990DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 PDF

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF