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    SIR836 Price and Stock

    Vishay Intertechnologies SIR836DP-T1-GE3

    N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SIR836DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR836DP-T1-GE3 Reel 20 Weeks 3,000
    • 1 -
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    • 10000 $0.27825
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    Mouser Electronics SIR836DP-T1-GE3 55,738
    • 1 $0.49
    • 10 $0.442
    • 100 $0.351
    • 1000 $0.281
    • 10000 $0.266
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    Newark SIR836DP-T1-GE3 Cut Tape 8,940 1
    • 1 $0.884
    • 10 $0.767
    • 100 $0.551
    • 1000 $0.551
    • 10000 $0.551
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    SIR836DP-T1-GE3 Reel 3,000
    • 1 $0.37
    • 10 $0.37
    • 100 $0.37
    • 1000 $0.37
    • 10000 $0.334
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    SIR836DP-T1-GE3 Cut Tape 3,000
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    • 10000 $0.362
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    TTI SIR836DP-T1-GE3 Reel 24,000 3,000
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    • 10000 $0.263
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    Avnet Asia SIR836DP-T1-GE3 21 Weeks 3,000
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    Chip1Stop SIR836DP-T1-GE3 14,787
    • 1 -
    • 10 $0.38
    • 100 $0.3137
    • 1000 $0.3
    • 10000 $0.3
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    SIR836DP-T1-GE3 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.353
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    EBV Elektronik SIR836DP-T1-GE3 21 Weeks 3,000
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    Vishay Huntington SIR836DP-T1-GE3

    Trans MOSFET N-CH 40V 10.6A 8-Pin PowerPAK SO EP T/R / MOSFET N-CH 40V 21A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR836DP-T1-GE3 1,491
    • 1 -
    • 10 $11.224
    • 100 $9.12
    • 1000 $9.12
    • 10000 $9.12
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    SIR836 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR836DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 21A 8-SOIC Original PDF

    SIR836 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIR836

    Abstract: SiR836DP 65*543 65543
    Text: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR836DP 2002/95/EC SiR836DP-T1-GE3 18-Jul-08 SIR836 65*543 65543

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR836DP 2002/95/EC SiR836DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR836DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR836DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIR836

    Abstract: 2429 AN609 SiR836DP 881979
    Text: SiR836DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR836DP AN609, 10-Nov-09 SIR836 2429 AN609 881979

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR836DP 2002/95/EC SiR836DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR836DP 2002/95/EC SiR836DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: MAX17597 Evaluation Kit General Description The MAX17597 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board to evaluate the MAX17597 peak-current-mode controller in a step-up (boost) configuration. The EV kit output is configured for


    Original     		PDF MAX17597 600kHz, 600kHz

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836