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    SIMM 72 EDO 256 Search Results

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    2m x 32 SRAM SIMM

    Abstract: IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168
    Text: Table of Contents Index Numbering Guides Part Number Type Org A dd r Voltage IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B IBM0116400M IBM0116400P IBM0116405 IBM0116405B IBM0116405M IBM0116405P


    Original     		PDF IBM0116160 IBM0116160B IBM0116160M IBM0116160P IBM0116165 IBM0116165B IBM0116165M IBM0116165P IBM0116400 IBM0116400B 2m x 32 SRAM SIMM IBM11M4735CB SIMM 72 IBM0116400M IBM038329P IBM025161L dimm 168

    64mb edo dram simm

    Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
    Text: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s


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    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    hynix dram numbering

    Abstract: ddr 200pin SO DIMM Hynix 2G cmos dram 8m x 16 hynix ddr400 sdram 1Gb 72PIN SO DIMM dimm ddr 400 DDR SDRAM HY DDR266 DDR266A
    Text: Last Updated: Jun. 2004 DDR SDRAM MODULE PART NUMBERING HYM XX X XX X X X XX X X X X X X - X HYNIX MODULE SPEED D5 D43 D4 J M K H L COMPONENT GROUP D1 D2 D5 DG : : : : 128Mb DDR SDRAM 256Mb DDR SDRAM 512Mb DDR SDRAM 1Gb DDR SDRAM POWER SUPPLY & INTERFACE BLANK


    Original     		PDF 128Mb 256Mb 512Mb DDR500 DDR400 DDR333 DDR266 DDR266A DDR266B hynix dram numbering ddr 200pin SO DIMM Hynix 2G cmos dram 8m x 16 hynix ddr400 sdram 1Gb 72PIN SO DIMM dimm ddr 400 DDR SDRAM HY

    hitachi hn27c256

    Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
    Text: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /


    Original     		PDF HM514100 HM514400 HM514800 HM51S4800 HM514900 HN62W4116 HN62W5016N HM62W4018N 50/40ns) hitachi hn27c256 hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note

    SO DIMM 72-pin

    Abstract: "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM
    Text: INDEX HELP QUIT INDEX MENU QUIT INDEX MENU QUIT • 64M Dynamic RAM EDO Access time MAX. (ns) Organization (words x bits) Part number 16M × 4 µPD4264405 50 60 µPD4265405 8M × 8 4M × 16 Refresh cycle (cycles/ ms) Maximum supply current Active (mA) Standby


    Original     		PDF 8K/64* 4K/64 50-pin 32-pin PD4264405 PD4265405 SO DIMM 72-pin "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM

    MT41LC256K32D4

    Abstract: BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 MT4C1004J MT4C16257 MT4C4001J MT4LC1M16C3 MT4LC1M16E5
    Text: TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO BEDO DRAMs are the Best Solution for 66 MHz Systems ❏ Standard DRAMs with shorter page mode cycle times ❏ EDO DRAMs that contain a pipeline stage and a 2-bit burst counter ❏


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    MT4D51232M-XX

    Abstract: No abstract text available
    Text: 256K, 512K x 32 DRAM SIMMs TECHNOLOGY, INC. MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32) • High-performance CMOS silicon-gate process


    Original     		PDF MT2D25632 MT4D51232 72-pin 512-cycle MT4D51232M-XX

    VCC166

    Abstract: 128m simm 72 pin ddr 200pin SO DIMM L-71001-0D 72 pin 128mb L7105 L-71051-0C 72 simm edo dram 64mb
    Text: L-71001-0D MITSUBISHI ELECTRIC REV Mitsubishi Memory Module Technical Direction Large Capacity 64MB 128MB 256MB 512MB 1GB High Speed EDO SDRAM Small outline DDR SDRAM RDRAMTM 72pin S.O.DIMM Memory Module 144pin S.O.DIMM 200pin DDR S.O. DIMM 72pin x36 168pin


    Original     		PDF L-71001-0D 128MB 256MB 512MB 72pin 144pin 200pin 168pin VCC166 128m simm 72 pin ddr 200pin SO DIMM L-71001-0D 72 pin 128mb L7105 L-71051-0C 72 simm edo dram 64mb

    thv8

    Abstract: HYB39S16800T 16m x 4 hyb
    Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15


    OCR Scan     		PDF L-SIM-72-12 324020S/GS 324025S/GS L-SIM-72-15 328020S/GS 328025S/GS 364020S/GS L-SIM-72-13 364035S/GS thv8 HYB39S16800T 16m x 4 hyb

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    VG264265

    Abstract: VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325
    Text: Product Selection Guide 1.2. Product Selection Guide DRAM DRAM Part Number 4 M h D ii V.M Description Conf./Vol. Access Time ns VG264260CJ VG26V4265CJ VG264265CJ 1 256K xl6 256Kxl6 256K xl6 5V 3,3V 5V 25/28/30/35 40/50/60 25/28/30/35 VG26(S)17400CJ VG26(S)17405CJ


    OCR Scan     		PDF VG264260CJ VG26V4265CJ VG264265CJ 256Kxl6 17400CJ 17405CJ VG26V 17400DJ 17405DJ VG264265 VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325

    smart modular

    Abstract: SM332Q4 SM332Q4A0
    Text: • Telecom & Industrial SRAM Modules • SMART Modular Technologies Custom designs available QUICK REFERENCE GUIDE: 12 CACHE SRAM MODULES CACHE SIZE CACHE TYPE SPEED PART NUMBER DIMENSIONS L x H x TOr. AVAILABILITY INTEL COASt COMPLIANT, L2 CACHE MODULES, 1 6 0 PIN, 6 4 BIT DATA BUS


    OCR Scan     		PDF 512KB 256KB 256KB SM364SCSP83XI15 SM364SCSPB3XI15 SM364TCSP83XI15 SM364T8A083XI15 SM21664 OSGUCACHEIO96 smart modular SM332Q4 SM332Q4A0

    DRAMs

    Abstract: Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO
    Text: SIEMENS Trends in Memory Technology when CAS goes high again and initiates the next page access. Trends in Memory Technology DRAM speed improvements have historically come from process and photolithography advances. More recent improvements in DRAM performance however, have resulted from


    OCR Scan     		PDF 64M-EDO 4/x72 DRAMs Dram 168 pin EDO buffered PQFP-128 Multibank - DRAM Signal Path Designer Bus repeater 64MEDO

    simm 72 edo 256

    Abstract: No abstract text available
    Text: SIEM EN S Trends in Memory Technology Trends in Trends in M em ory Technology w hen CAS goes high again and initiates the next page access. DRAM speed im provem ents have historically com e from process and photolithography advances. More recent im provem ents in DRAM


    OCR Scan     		PDF 64MEDO i32/x36 simm 72 edo 256

    64mb edo dram simm

    Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
    Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt


    OCR Scan     		PDF VQ264260BJ 4265BJ 264265BJ 17400CJ 17405CJ 174TGA 26418165BJGA 26418165BTGA VE46417805BJGA 64mb edo dram simm Dram 168 pin EDO 8Mx8 4Mx4 dram simm

    Untitled

    Abstract: No abstract text available
    Text: 256K, 512K x 32 DRAM SIMMs MICRON • IbCHNULUÜY. INC MT2D25632 X MT4D51232(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin single in-line memory module (SIMM) • 1MB (256K x 32) and 2MB (512K x 32)


    OCR Scan     		PDF MT2D25632 MT4D51232 72-pin 512-cycle

    GMM732411

    Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
    Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6


    OCR Scan     		PDF OMM781000CNS-6 GMM791000CNS-6 GMM784000CS-6 GMM794000CS-6 GMM781OOOCNS-7 GMM79I GMM784000CS-7 GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM732411 GMM7362000 GMM732411OCNS OMM781000CNS

    edo dram 72-pin simms 64mb

    Abstract: 64mb 72-pin simm 2m 72-pin Flash simms Flash dIMM ibm thinkpad board diagram rom 72-pin mobile MOTHERBOARD parts diagram edo dram 72-pin SO DIMM
    Text: • Synchronous Flash DIM M s • SMART Modular lechnologies Custom designs available QUICK REFERENCE GUIDE: 168-PIN 8-BYTE WIDE FLASH DIMM MODULES DENSITY ORG. ACCESS TIME ns PROG. VOLTAGE (V) SMART PART N DRAM-LIKE FLASH DIMMS (FLASHRAM) 16MB 2M x 64 85


    OCR Scan     		PDF 168-PIN SM564F2000 SM564F1000 SM764A8000S SM764 4000S SM764A2000S 2Mx64 SM76423XG2CUUGU SM76413X61CUIIGU edo dram 72-pin simms 64mb 64mb 72-pin simm 2m 72-pin Flash simms Flash dIMM ibm thinkpad board diagram rom 72-pin mobile MOTHERBOARD parts diagram edo dram 72-pin SO DIMM

    sm5801

    Abstract: 64mb edo dram simm 16mb simm module dram 72-pin simm 128mb dram "32mb x 32" simm
    Text: SMRTD005 SMART Modular Technologies QUICK REFERENCE GUIDE: SDRAM DIMM MODULES DENSITY ORG. BASE DRAMs ERROR CORRECTION PART NUMBER* 1 4 4 P IN , UNBUFFERED, SERIA L PRESENCE DETECT, 3 .3 V S O D IM M s CO CO 16MB 16MB 32MB 32MB lM x 64 2 M x 64 2 M x 64 4M X 64


    OCR Scan     		PDF SMRTD005 564013174NWUU SM564023174NWUU SM564028074NWUU SM564048074NWUU SM564044074NWUU SM572028074DWUU SM572048074DWUU SM572044074DWUU SM572028074EWUU sm5801 64mb edo dram simm 16mb simm module dram 72-pin simm 128mb dram "32mb x 32" simm

    Datasheet-03/HY51174048

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532414B M-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414B is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 jaF and 0.01 decoupling capacitors are mounted


    OCR Scan     		PDF HYM532414B 32-bit HY5117404B HYM532414BM/BSLM/BTM/BSLTM HYM532414BMG/BSLMG/BTMG/BSLTMG HYM532414B 4b75066 Datasheet-03/HY51174048

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM532814A M -Series 8M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5328104A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. O.IjjF and 0.01 nF decoupling capacitors are


    OCR Scan     		PDF HYM532814A 32-bit HYM5328104A HY5117404A HYM532814AM/ASLM/Ã HYM5328104AMG/ASLMG/ATWG/ASLTMG HYM532814A HYMS32814A

    samsung KLM ordering information

    Abstract: samsung klm
    Text: DRAM DIMM NUMBERING SYSTEM 12 KM M 3 72 E 4 1 0 A T T SAMSUNG 13 1 - L 6 M e m o ry Speed M o d u le M e m o ry T y p e & E d g e C o n n e c to r Power D a ta B it P C B R e v is io n M ode/F:e a tu re & P ro c e s s ¡¡•O peratin g V o lta g e P a c k a g e T y p e & L e a d F in is h


    OCR Scan     		PDF

    HYM532214A

    Abstract: No abstract text available
    Text: HYM532214A E-Series •HYUNDAI 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532214A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 decoupling capacitors are mounted


    OCR Scan     		PDF HYM532214A 32-bit HY5117804B HYM532214AE/ASLE/ATE/ASLTE HYMS32214AEG/ASLEG/ATEG/ASLTEG R0n62 XW137 W10161