VG264265BJ
Abstract: VG264265BJ-4 VG26V4265CJ
Text: Preiminary VIS VG26V4265CJ 262,144x16-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit designtechnologies it is packaged in JEDEC standard 40 - pin plastic SOJ package.
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VG26V4265CJ
144x16-Bit
40/50/60ns
40-PIN
1G5-0113
VG264265BJ-4
VG264265BJ-5
VG264265BJ-6
VG26V4265BJ-5
VG264265BJ
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VG264265
Abstract: 4265CJ
Text: VG26 V 4265CJ 262,144 x 16 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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Original
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PDF
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4265CJ
40-pin
25/28/30/35/40ns
40/50/60ns
1G5-0118
VG264265
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VG264265
Abstract: VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325
Text: Product Selection Guide 1.2. Product Selection Guide DRAM DRAM Part Number 4 M h D ii V.M Description Conf./Vol. Access Time ns VG264260CJ VG26V4265CJ VG264265CJ 1 256K xl6 256Kxl6 256K xl6 5V 3,3V 5V 25/28/30/35 40/50/60 25/28/30/35 VG26(S)17400CJ VG26(S)17405CJ
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OCR Scan
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PDF
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VG264260CJ
VG26V4265CJ
VG264265CJ
256Kxl6
17400CJ
17405CJ
VG26V
17400DJ
17405DJ
VG264265
VG46VS8325AQ
VM43217405CJSA
VP4-64
VS46417801BTGC
VG46VS8325BO
VG264
VM83217400CJSA
vs46417801bt
VG46VS8325
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Untitled
Abstract: No abstract text available
Text: VIS ? VG26 V 4265CJ 2 6 2 ,1 4 4 x 1 6 -B it CMOS Dynamic RAM Description T h e d e v ic e is C M O S D y n a m ic R AM o rg a n iz e d a s 2 6 2 ,1 4 4 w o rd s x 16 b its w ith e x te n d e d d a ta o u t a c c e s s m o d e . It is fa b ric a te d w ith an a d v a n c e d s u b m ic ro n C M O S te c h n o lo g y an d a d v a n c e d C M O S c irc u it d e s ig n
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OCR Scan
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PDF
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4265CJ
400mil,
40-pin
G5-0118
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V 4265CJ 2 6 2 ,1 4 4 x 1 6 -B it CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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OCR Scan
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PDF
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4265CJ
40-pin
25/28/30/35/40ns
40/50/60ns
refV4265CJ
4265CJ
400mil,
G5-0118
age28
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VG264265
Abstract: ut501 144XL
Text: VG26 V 4265CJ 262,144x16-B it CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 262,144 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and advanced CMOS circuit design
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OCR Scan
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PDF
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4265CJ
144x16-B
40-pin
25/28/30/35/40ns
40/50/60ns
1G5-0118
VG264265
ut501
144XL
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