000000C
Abstract: No abstract text available
Text: I» LG Semicon. Co. LTD. Description Features The GMM7362000ES/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board w ith decoupling capacitors. The
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GMM7362000ES/SG
7362000E
GMM7362000ES/SG
000000C
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Untitled
Abstract: No abstract text available
Text: @ LG Semlcon. Co., LTD. Description Features The GMM7362000CS/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board with decoupling capacitors. The
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GMM7362000CS/SG
7362000C
GMM7362000CS/SG
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Untitled
Abstract: No abstract text available
Text: GMM7361000SG/SGS-60/70/80 1,048,576 W O R D S x 36 BIT GMM7362000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 W O R D Sx 36 BIT CM O S DYNA M IC RAM M O DULE Description Features The G M M 7361000SG /SG S is a 1M x 36 b its d y n am ic RAM M O D U LE w hich is assem b led 8
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GMM7361000SG/SGS-60/70/80
GMM7362000SG-60/70/80
7361000SG
7362000SG
cito38)
M7361000SG/SGS
7362000SG
GMM7362000SG
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Untitled
Abstract: No abstract text available
Text: GMM7362000DS/SG-60/70/80 LG Semicon Co.,Ltd. Description 2,097,152 W O R D S x 36 BIT CMOS DYNAMIC RAM MODULI; Features The G M M 7362 0 0 0 D S /S G is a 2M x 36 bits D ynam ic RAM M ODULE w hich is assem bled 16 pieces o f 1M x 4bit D R A M s in 20/26 pin SO J package, and 8 pieces of
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GMM7362000DS/SG-60/70/80
62000D
7362000D
01toot"
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Untitled
Abstract: No abstract text available
Text: Rev 0. GMM7361000BS/BSG-60/70/80 GMM7361000BSS/BSGS-60/70/80 GoldStar 1,048,576 WORDS x 36 BIT GOLDSTAR ELECTRON CO., LTD. GMM7362000BS/BSG-60/70/80 2,097,152 WORDS x 36 BIT/CMOS DYNAMIC RAM MODULE Description Features The GMM7361000BSG/BSGS is a 1M x 36 bits dy
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GMM7361000BS/BSG-60/70/80
GMM7361000BSS/BSGS-60/70/80
GMM7362000BS/BSG-60/70/80
GMM7361000BSG/BSGS
GMM7362000BS/BSG
1IV13Q-
JliJULNJL1111111
IJ11IUI11IL!
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GMM7362000B
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7362000BS/SG is a 2M x 36 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board with decoupling capacitors. The
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OCR Scan
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GMM7362000BS/SG
GMM7362000BS/SG
GMM7362000BS
88888C
402B75?
GMM7362000B
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Untitled
Abstract: No abstract text available
Text: <S» LG Semicon. Co. LTD. Description Features The GMM7362000DS/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board w ith decoupling capacitors. The
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OCR Scan
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GMM7362000DS/SG
7362000D
GMM7362000DS/SG
402A757
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Untitled
Abstract: No abstract text available
Text: GMM7362000CS/SG-60/70/80 LG Semicon Co., Ltd. Description The G M M 7362000CS/SG is a 2M x 36 bits Dynam ic RAM MODULE which is assem bled 16 pieces o f 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces o f 1M x 1 bit DRAM s on the printed circuit board
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OCR Scan
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GMM7362000CS/SG
7362000CS/SG
GMM7362000CS/SG-60/70/80
GMM7362000CS/SG
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GMM7362000
Abstract: No abstract text available
Text: GMM7362000CS/SG-60/70/80 LG Semicon Co.,Ltd. Description 2,097,152 W O R D S x 36 BIT CMOS DYNAMIC RAM MODULE Features The GM M 7362000CS/SG is a 2M x 36 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of
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GMM7362000CS/SG-60/70/80
7362000CS/SG
GMM7362000
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GM71C18160AJ7
Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Text: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I
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GM71C1000B-60
GM71C
1OO0BJ-60
1000BZ-60
100OBL-6O
1000BLJ-60
GM71C1000BLZ-60
GM71C18160AJ7
GM71C4260AJ70
GM71C4400BJ60
GM71C4400BJ70
gm71c4100cj60
GM71C1000BJ70
GM76C256ALL-70
GM76C256BLLFW70
GM71C4100BJ70
GM76C88ALFW15
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LG 2MX32 EDO simm module
Abstract: GMM732201 GMM732411OCNS
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32
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\GMM781000CNS-6
GMM791000CNS-6
GMM784000CS-6
GMM794000CS-6
1GMM781OOOCNS-7
1GMM791000CNS-7
1GMM784000CS-7
1GMM794000CS-7
1Mx40
2Mx32
LG 2MX32 EDO simm module
GMM732201
GMM732411OCNS
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GM76C88AL FW
Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Text: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20
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GM71C1000B/BJ/BZ-60
GM71C1000B/BJ/BZ-70
GM71C1Q0
B/BJ/BZ-80
GM71C1000BL/BLJ/BLZ-60
GM71C1OOOBL/BLJ/BLZ-
GM71C1000BL/BIJ/BLZ-80
200uA)
512cydes/8ms
18DIP
GM76C88AL FW
71C4260
GM71G
GM76C28A
GM23C32000
LR-80
CLR-80
HR80
Tlr8
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GMM732411
Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6
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OMM781000CNS-6
GMM791000CNS-6
GMM784000CS-6
GMM794000CS-6
GMM781OOOCNS-7
GMM79I
GMM784000CS-7
GMM794000CS-7
1MX32
GMM7321OOOCS/SG-6
GMM732411
GMM7362000
GMM732411OCNS
OMM781000CNS
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GM76C256all
Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Text: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60
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GM71C1000B/BJ/BZ-60
GM71C10008/BJ/BZ-70
GM71C
GM71C10006UBLJ/BLZ-60
GM71C10006UBLJ/BLZ-70
GM71C10006UBLJ/BLZ-80
351MxB
GM23C8000A/AF
32DIP
32SOP
GM76C256all
16M-DRAM
LT-860
GM23C400
GM76C28A
GM23C810QA-12
LR-80
BFW12
GM23C8001
GM23C410
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m7401
Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Text: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6
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1GMM781000CNS-6
GMM791GOOCNS-6
GMM784000CS-6
GMM794000CS-6
GMM781000CNS-7
GMM791000CNS-7
GMM784000CS-7
GMM794000CS-7
GMM7321OOOCS/SG-6
GMM732101OCS/SG-6
m7401
1MX1
GMM732211OCMS
M7641
GMM7324100cns
83CT
128MB 72-pin SIMM
dram 72-pin simm 128mb
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Untitled
Abstract: No abstract text available
Text: G M M7362000BS/SG-60/70/80 LG Semicon Co.,Ltd. Description 2,097,152 W O R D S x 36 BIT CMOS DYNAMIC RAM MODULE Features T he G M M 7362000B S /S G is a 2M x 36 bits D ynam ic RAM M O D U L Ii w hich is assem bled 16 pieces o f 1M x 4bit D R A M s in 2 0/26 pin SO J package, and 8 pieces o f
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M7362000BS/SG-60/70/80
7362000B
62000B
GMM7362000BS/SG
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GM71C4400BJ70
Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Text: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80
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71C1000B-70
1OOOBJ-70
71C1000BZ-70
71C1000B-80
1OOOBJ-80
71C1000BZ-80
71C1000BL-80
1000B
I000H
GM71C1000B-60
GM71C4400BJ70
GM71C4400BLT70
GM71C4100CJ60
GM76C256BLL-70
GM76C8128ALLFW70
GM71C4100CJ70
1gm7
GM76C256BLL70
GMM7362000BSG-70
76C256
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