WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
|
Original
|
WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8
|
Original
|
WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O0-31
A0-18
|
PDF
|
WS1M32-XG3X
Abstract: No abstract text available
Text: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as
|
Original
|
WS1M32-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32-XG3X
I/O31
I/O30
I/O29
I/O28
|
PDF
|
pc133 sdram
Abstract: HYM4V33100DTYG-75
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
|
Original
|
1Mx32
PC133
1Mx16
HYM4V33100DTYG
1Mx16bits
1Mx16bits
400mil
50pin
132pin
pc133 sdram
HYM4V33100DTYG-75
|
PDF
|
WS1M32V-XG3X
Abstract: No abstract text available
Text: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins
|
Original
|
WS1M32V-XG3X
1Mx32
512Kx32,
2Mx16
WS1M32V-XG3X
I/O31
I/O30
I/O29
I/O28
|
PDF
|
Flash SIMM 80
Abstract: E28F008SA EDI7F341MC 80pin-SIMM SIMM 80 jedec
Text: EDI7F341MC White Electronic Designs 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages
|
Original
|
EDI7F341MC
1Mx32
EDI7F341MC
EDI7F2341MC
E28F008SA
EDI7F341MC-BNC:
150ns
Flash SIMM 80
80pin-SIMM
SIMM 80 jedec
|
PDF
|
1mx8
Abstract: E28F008SA EDI7F4341MC
Text: EDI7F4341MC 1Mx32 FLASH MODULE FEATURES DESCRIPTION n 1Mx32 The EDI7F4341MC is organized as four banks of 1Mx32. The module is based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Intel's E28F008SA Flash Device
|
Original
|
EDI7F4341MC
4x1Mx32
4x1Mx32
EDI7F4341MC
1Mx32.
E28F008SA
150ns
EDI7F4341MC90BNC
1mx8
|
PDF
|
WEDF1M32B-XXX5
Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
Text: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature
|
Original
|
WEDF1M32B-XXX5
1Mx32
120ns
1Mx32,
2Mx16
16KByte
WEDF1M32B-XG2TX5
WEDF1M32B-XHX5
32KByte
WEDF1M32B-XXX5
1m 0880
|
PDF
|
K3P6C2000B-SC
Abstract: No abstract text available
Text: K3P6C2000B-SC CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access
|
Original
|
K3P6C2000B-SC
32M-Bit
2Mx16
/1Mx32)
100ns
150mA
70-SSOP-500
K3P6C2000B-SC
152x16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM23C32205BSG CMOS MASK ROM 32M-Bit 2Mx16 /1Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 16(word mode) 1,048,576 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 double words/ 8 words page access
|
Original
|
KM23C32205BSG
32M-Bit
2Mx16
/1Mx32)
100ns
150mA
70-SSOP-500
KM23C32205BSG
152x16
|
PDF
|
ce1h
Abstract: No abstract text available
Text: HANBit HMF1M32M4V Flash-ROM Module 4MByte 1Mx32Bit , 72Pin-SIMM, 3.3V Design Part No. HMF1M32M4V GENERAL DESCRIPTION The HMF1M32M4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of four 1M x 8bit FROM mounted on a 72 -pin, single -sided, FR4-printed circuit
|
Original
|
HMF1M32M4V
1Mx32Bit)
72Pin-SIMM,
HMF1M32M4V
x32bit
HMF1M32M4V-70
32bit
72Pin
ce1h
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HY5DU323222QP 32M 1Mx32 DDR SDRAM HY5DU323222QP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / May. 2004
|
Original
|
HY5DU323222QP
1Mx32)
200Mhz
HY5DU323222
432-bit
1Mx32
|
PDF
|
s - ck5t
Abstract: CA52
Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
|
OCR Scan
|
KMM5321200BW/B
KMM5321200BW/BWG
1Mx32
1Mx16
KMM5321200BW
42-pin
72-pin
s - ck5t
CA52
|
PDF
|
KM416C1200AJ
Abstract: ra57
Text: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification
|
OCR Scan
|
M5321200AW/AWG
KMM5321200AW/AWG
1Mx32
1Mx16
KMM5321200AW
42-pin
72-pin
KMM5321200AW
KM416C1200AJ
ra57
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: W PF 1 M 3 2 X -9 0 P SC 5 1Mx32 FLASH SIMM PRELIMINARY * FEATURES • ■ Access Time of 90ns ■ 100,000 Erase/Program Cycles Packaging: ■ Organized as 1Mx32 • 80-pin SIM M ■ Commercial Tem perature Range • The module is manufactured w ith four 1Mx8 CMOS flash
|
OCR Scan
|
1Mx32
80-pin
Am29F080
|
PDF
|
smd CODE L4
Abstract: WF1M32-XXX
Text: a WF1M32-XXX WHITE /MICROELECTRONICS 1Mx3212V FLASH MODULE, SMD 5962-94613 FEATURES • A ccess Tim es of 1 0 0 ,150ns ■ Packaging: • • ■ O rganized as 1M x32, user co n fig u ra b le as 2M x1 6 or 4M x8. ■ C om m ercial, Ind ustria l and M ilita r y T e m pe ratu re Fianges
|
OCR Scan
|
WF1M32-XXX
1Mx3212V
150ns
32-XG
150ns
100ns
smd CODE L4
WF1M32-XXX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: a WS1M32-XG3X WHITE /MICROELECTRONICS 1Mx32 SRAM MODULE FEATURES • A c c e s s T im e s of 17, 20, 25ns Low Pow er CM OS ■ 84 lead, 28mm CQFP, Packag e 511 Built-in Decoupling Caps and M u ltip le Ground Pins fo r Low Noise Operation ■ Organized as tw o banks of 5 1 2K x3 2 , U ser C o nfig urable as
|
OCR Scan
|
WS1M32-XG3X
1Mx32
WS1M32-XG3X
AO-18
512Kx32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: a WPS1M32V-XXC M/HITE /MICROELECTRONICS 1Mx32SRAM 3.3V MODULE ADVANCED* FEATURES • ■ A ccess Tim es of 17, 20, 25, 35ns ■ C om m ercial Tem pe ratu re Range Packaging ■ T T L C o m p a tib le Inputs and O utputs • M o d u le is m a nufa cture d w ith eig h t 1M x4 SRAM m em ory
|
OCR Scan
|
WPS1M32V-XXC
1Mx32SRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: a WF1M 32B-XXX5 WHITE /MICROELECTRONICS 1Mx325V/12V FLASH MODULE PRELIMINAR/* FEATURES • Access Times of 100,120ns Organized as 1Mx32, user configurable as 2Mx16 or4Mx8. ■ Commercial, Industrial and Military Temperature Ranges Packaging: • 66-pin, PGA Type, 1.185 inch square, Hermetic
|
OCR Scan
|
32B-XXX5
1Mx325V/12V
120ns
1Mx32,
2Mx16
V/12V
32B-XG2TX5
32B-XHX5
66-pin,
5/12V)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one
|
OCR Scan
|
HYM41V331OODTYG
1Mx32,
1Mx16
PC133
4V33100D
x16bits
50pin
132pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM332V104AT KMM332V104AT Fast Page Mode 1Mx32 DRAM DIMM Low Power, 4K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM332V104AT is a 1M bit x 32 FEATURES • Performance Range: Dynamic RAM high density memory module. The Samsung KMM332V104AT consists of two CMOS
|
OCR Scan
|
KMM332V104AT
KMM332V104AT
1Mx32
1Mx16bit
44-pin
72-pin
KMM332V104AT-L6
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM332F104AT-L KMM332F124AT-L DRAM MODULE KMM332F104AT-L / KMM332F124AT-L Fast Page with EDO Mode 1Mx32 DRAM DIMM, 1Mx16, Low Pow er, 4K & 1K Refresh, 3.3V GEN ER AL FEATURES DESCRIPTION The Samsung KMM332F10 2 4AT is a 1M bit x 32 Dynamic RAM high density memory module. The
|
OCR Scan
|
KMM332F104AT-L
KMM332F124AT-L
KMM332F104AT-L
KMM332F124AT-L
1Mx32
1Mx16,
KMM332F10
16bit
44-pin
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M/HITE MICROELECTRONICS 1Mx32 SRAM 3.3V MODULE WPS1M32V-XXC ADVANCED* FEATURES • A cce ss T im e s o f 17, 20, 25, 35ns ■ C om m ercial Te m p e ra tu re Range ■ Packaging ■ TTL C om p a tib le Inputs and O utputs • M o d u le is m a n u fa c tu re d w it h e ig h t 1 M x 4 S R AM m em ory
|
OCR Scan
|
1Mx32
WPS1M32V-XXC
1Mx32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M/HITE MICROELECTRONICS 1Mx32 SRAM 3.3V MODULE WPS1M32V-XXC ADVANCED* FEATURES • A c c e s s T i m e s o f 17, 20, 25, 3 5 n s ■ C o m m e r c ia l T e m p e r a t u r e Range ■ P a c k a g in g ■ TTL C o m p a t i b l e In p u ts and O u tp u t s
|
OCR Scan
|
1Mx32
WPS1M32V-XXC
|
PDF
|
