Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HY5117804B Search Results

    SF Impression Pixel

    HY5117804B Price and Stock

    SK Hynix Inc HY5117804BJ-60

    IC,DRAM,EDO,2MX8,CMOS,SOJ,28PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY5117804BJ-60 40
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    HY5117804B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5117804B

    Abstract: HY5117804 HYM564214AHG HYM564214ATHG
    Text: HYM564214A H-Series Buffered 2Mx64 bit CMOS DRAM MODULE based on 2Mx8 DRAM, EDO, 2K-Refresh GENERAL DESCRIPTION The HYM564214A H-Series is a 2Mx64-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117804B in 28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin


    Original     		PDF HYM564214A 2Mx64 2Mx64-bit HY5117804B 16-bit HYM564214AHG 168-Pin HY5117804 HYM564214ATHG

    HY5117804B

    Abstract: HY5117804BT HY5117804
    Text: HY5117804B,HY5116804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		PDF HY5117804B HY5116804B HY5117804BT HY5117804

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HYM532224A E-Series 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532224A is a 2M x 32-bit EDO m ode CMOS DRAM m odule consisting of four HY5117804B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM532224A 32-bit HY5117804B HYM532224AE/ASLE/ATE/ASLTE HYM532224AEG/ASLEG/ATEG/ASLTEG 171M1N DD054M 1CE13-10-0EC94

    Untitled

    Abstract: No abstract text available
    Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F


    OCR Scan     		PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG -0004gOQ 4b750flfl D005fl51 1EC07-10-JAN96

    HYM532214A

    Abstract: No abstract text available
    Text: HYM532214A E-Series •HYUNDAI 2M x 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532214A is a 2M x 32-bit EDO mode CMOS DRAM module consisting of four HY5117804B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 decoupling capacitors are mounted


    OCR Scan     		PDF HYM532214A 32-bit HY5117804B HYM532214AE/ASLE/ATE/ASLTE HYMS32214AEG/ASLEG/ATEG/ASLTEG R0n62 XW137 W10161

    Untitled

    Abstract: No abstract text available
    Text: » H Y U N D A I H Y M 5 6 4 2 1 4 A F - S e r ie s Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5117804B in 28/28 SOJ


    OCR Scan     		PDF 64-bit HYM564214A HY5117804B HYM564214AFG/ATFG/ASLFG/ASLTFG of16M /-0004f2 S41MIN. -004M 4b750flfl

    Untitled

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM564414A F-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen HY5117804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 uF and 0.01 uF


    OCR Scan     		PDF HYM564414A 64-bit HY5117804B HYM564414AFG 1EC07-10-J 100CS4

    HY5117800BT

    Abstract: No abstract text available
    Text: - K Y U H O A I HY5117804B,HY5116804B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117804B HY5116804B A0-A11) HY5117800BT

    Untitled

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM572A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM572A214A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 mF and 0.01 mF


    OCR Scan     		PDF HYM572A214A 72-bit HY5117804B HYM572A214AFG A0-A10) CAS0-CA57) DQ0-DQ71) 1EC07-10-JAN96

    52CAE

    Abstract: HY5117804
    Text: •«HYUNDAI HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF


    OCR Scan     		PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG A0-A10) DQ0-DQ71) 1EC07-10-JAN96 52CAE HY5117804

    Untitled

    Abstract: No abstract text available
    Text: •«HYUNDAI HYM564414A F-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564414A is a 4M x 64-bit EDO m ode CMOS DRAM m odule consisting of sixteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .lpF and O.OinF


    OCR Scan     		PDF HYM564414A 64-bit HY5117804B HYM564414AFG/ATFG/ASLFG/ASLTFG 004i2 Mb750flfl 00057flfl 1EC07-10JAN88

    Untitled

    Abstract: No abstract text available
    Text: -HYUHDWP • HYM532214A E-Series 2Mx32 bit EDO DRAM MODULE based on 2Mx8 DRAM, SV, 2K-Refresh GENERAL DESCRIPTION The HYM532214A E-Series is a 2Mx32-bit Extended Data Out mode C M O S DRAM module consisting of four HY5117804B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ¡iF


    OCR Scan     		PDF HYM532214A 2Mx32 2Mx32-bit HY5117804B HYM532214AE HYM532214AEG 72-Pin 256ms

    Untitled

    Abstract: No abstract text available
    Text: < < 3 < 3 Y IIIID A I - ^ • HYM564214A H-Series 4Mx64-blt CMOS ORAM MODULE with EXTENDED DATA OUT J GENERAL DESCRIPTION The HYM 564214A H-Series is a 2M x64-bit Extended Data O ut mode CM OS DRAM m odule consisting of eight HY5117804B in 28 pin SOJ or TSOPII and tw o 16-bit BiCMOS line driver in TSSO P on a 168 pin


    OCR Scan     		PDF HYM564214A 4Mx64-blt 64214A x64-bit HY5117804B 16-bit HYM564214AHG 168-Pin 2Mx64

    HY5117804B

    Abstract: 5117804b HY5117804
    Text: HYUNDAI HY5117804B>HY51168046 2M X 8-bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 2,097,152 x 8-bit configuration with Extended Data O ut n o d e CM O S DRAMs. Extended Data O ut m ode


    OCR Scan     		PDF HY5117804B HY51168046 HY5117804BJ HY5117804BSLJ HY5117804BT HY5117804BSLT HY5116804BJ HY5116804BSLJ Y5116804BT HY5116804BSLT 5117804b HY5117804

    Untitled

    Abstract: No abstract text available
    Text: •'H Y U N D A I HYM572A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM572A214A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 jF and 0.01 nF


    OCR Scan     		PDF HYM572A214A 72-bit HY5117804B HYM572A214AFG/ATFG/ASLFG/ASLTFG 100ffi 12S0171MIN 1EC07-10-J

    Untitled

    Abstract: No abstract text available
    Text: 'HYUNDAI HYM564214A F-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564214A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 ^d e c o u p lin g


    OCR Scan     		PDF HYM564214A 64-bit HY5117804B HYM564214AFG/ATFG/ASLFG/ASLTFG of16M A0-A10) CA50-CA57) DQ0-DQ63)

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 17 8 0 4 B ,H Y 5 1 16 8 0 4 B 2Mx8, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 2,097,152 x 8-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF

    1MX16BIT

    Abstract: 16MX1
    Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE


    OCR Scan     		PDF 256Kx4-bit, 1MX16BIT 16MX1

    H52M

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51 Vi 7804B in 28 28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pm glass-epoxy printed circuit board 0 1u F and 0 01 uF


    OCR Scan     		PDF HYM5V64414A 64-bit 7804B HYM5V64414AFG DQ0-DQ63) 1EC07-10-JAN96 H52M

    HY5117804

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64414A F-Series 4M x 64-bit CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HVM5V64414A is a 4M x 64-bit EDO mode CMOS DRAM m odule consisting of sixteen HY51V17804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. O .luF and 0.01 mF


    OCR Scan     		PDF HYM5V64414A 64-bit HVM5V64414A HY51V17804B HYM5V64414AFG/ATFG/ASLFGASLTFG CA50-CAS7) DQ0-DQ63) 4b750flfl 1EC07-10-JAN96 HY5117804

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    HY5118164B

    Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
    Text: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B


    OCR Scan     		PDF 16Mbit HY51V17404A HY51V17404B 300mil) 400mil) HY5118164B hy5118160b HY5118160 HY51V65400TC HY5117804B

    HY5118160JC

    Abstract: HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W
    Text: As of ’96.3Q TYPE SIZE 30 Pin 1MB SIMM DESCRIPTION. PART NO. SPEEp- R EF. D EV ICE U S E D 1M <8 FPM ,L HYM581000BM 50/60/70 IK HY514400AJ x 2 1M <9 FPM ,L HYM591000BM 60/70 IK HY514400AJX2 4M <8 FPM ,L HYM584000AM 50/60/70 IK HY514100AJ x 8 FPM .SL HYM584000DM


    OCR Scan     		PDF HYM581000BM HYM591000BM SPEEp50/60/70 HY514400AJ HY514400AJX2 HY531000AJX1 HYM584000AM HYM584000DM HYM594000AM HYM594000DM HY5118160JC HY531000AJ HY-53 HYM591000B HYM536100AM HYM532120W

    HY51V18164

    Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
    Text: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC


    OCR Scan     		PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ