Untitled
Abstract: No abstract text available
Text: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TSOP-6 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 1040 520 000 200 C + N2 FAIL PERCENTAGE 0.00 HAST 4045 408 010 130 C, 85 % RH 0.00
|
Original
|
PDF
|
M2003
08-May-12
|
System Application Note AN847
Abstract: AN847
Text: VISHAY SILICONIX www.vishay.com MOSFETs System Application Note AN847 Zero-Voltage Switching Full-Bridge Converter: Operation, FOM, and Guidelines for MOSFET Selection By Philip Zuk and Sanjay Havanur There are two categories of switching topologies used in
|
Original
|
PDF
|
AN847
SiHx21N60EF
SiHx28N60EF
SiHx33N60EF
SiHG47N60EF
15-Dec-14
System Application Note AN847
AN847
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4048DY Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si4048DY
18-Jul-08
|
SI7456CDP
Abstract: No abstract text available
Text: SPICE Device Model Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si7456CDP
18-Jul-08
|
SIR874DP
Abstract: No abstract text available
Text: SPICE Device Model SiR874DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR874DP
18-Jul-08
|
SIR164DP
Abstract: A7282 65060 spice model 740
Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR164DP
18-Jul-08
A7282
65060
spice model 740
|
0745
Abstract: No abstract text available
Text: SPICE Device Model SiR834DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR834DP
18-Jul-08
0745
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR438DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
|
Original
|
PDF
|
SiR438DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS476DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiS476DN
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiRA06DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiRA06DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiRA04DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4174DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si4174DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiSA04DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiSA04DN
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
|
|
SiRA00DP
Abstract: S12-1009 MOSFET definitions
Text: SPICE Device Model SiRA00DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiRA00DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S12-1009
MOSFET definitions
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
|
Original
|
PDF
|
Si4010DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C
|
Original
|
PDF
|
SiR472ADP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS476DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiS476DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
|
Original
|
PDF
|
DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7980DP Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
Si7980DP
18-Jul-08
|
SiR438DP
Abstract: No abstract text available
Text: SPICE Device Model SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
|
Original
|
PDF
|
SiR438DP
18-Jul-08
|
si4174dy
Abstract: No abstract text available
Text: SPICE Device Model Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4174DY
18-Jul-08
|
siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
|
OCR Scan
|
PDF
|
J-23548
K24123
i39-40i
NZ3766
53-C-03
siliconix fet
Transistor E112 FET N-Channel
JFET TRANSISTOR REPLACEMENT GUIDE j201
E112 jfet
jfet bfw10 terminals
JFET BFW10 SPECIFICATIONS
4856a mosfet
Transistor E112 FET
FETs in Balanced Mixers Ed Oxner
equivalent components FET BFW10
|
S19110DJ
Abstract: S19110D S19110 SI9110AK D469 CMOS SI9111DY
Text: SÏ9110/9111 Siliconix incorporated Switchmode Controllers FEATURES APPLICATIONS • 10 to 120 V Input Range • DC/DC Converters • Current-mode Control • Distributed Power Systems • High-Speed, Source-Sink Output Drive • ISDN Equipment • High Efficiency Operation
|
OCR Scan
|
PDF
|
Si9110
Si9110/9111
120-VDC)
2N7004,
2N7005,
IRFD120
1RFD220.
SMM20N50
S19110DJ
S19110D
S19110
SI9110AK
D469 CMOS
SI9111DY
|
