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    SIR472ADP Price and Stock

    Vishay Siliconix SIR472ADP-T1-GE3

    MOSFET N-CH 30V 18A PPAK SO-8
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    DigiKey SIR472ADP-T1-GE3 Cut Tape 3,577 1
    • 1 $0.43
    • 10 $0.374
    • 100 $0.2588
    • 1000 $0.2025
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    SIR472ADP-T1-GE3 Reel 3,000 3,000
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    SIR472ADP-T1-GE3 Digi-Reel 1
    • 1 $0.43
    • 10 $0.374
    • 100 $0.2588
    • 1000 $0.2025
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    Vishay Intertechnologies SIR472ADP-T1-GE3

    Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR472ADP-T1-GE3)
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    Avnet Americas SIR472ADP-T1-GE3 Reel 16 Weeks 6,000
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    • 10000 $0.27783
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    Mouser Electronics SIR472ADP-T1-GE3
    • 1 $0.43
    • 10 $0.374
    • 100 $0.259
    • 1000 $0.203
    • 10000 $0.202
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    Bristol Electronics SIR472ADP-T1-GE3 5,387
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    Quest Components SIR472ADP-T1-GE3 4,309
    • 1 $0.81
    • 10 $0.81
    • 100 $0.81
    • 1000 $0.324
    • 10000 $0.2835
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    TTI SIR472ADP-T1-GE3 Reel 6,000
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    • 10000 $0.213
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    SIR472ADP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR472ADP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 18A PPAK SO-8 Original PDF

    SIR472ADP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiR472ADP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiR472ADP AN609, 5361m 3760u 3542m 0384m 8090m 6002m 9811m 0647m

    Untitled

    Abstract: No abstract text available
    Text: SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a, g 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (TYP.) 9 nC D 5 D 6 • 100 % Rg and UIS tested • Optimized for high-side switching in


    Original     		PDF SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a, g 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (TYP.) 9 nC D 5 D 6 • 100 % Rg and UIS tested • Optimized for high-side switching in


    Original     		PDF SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR472ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a,g RDS(on) () Max. 30 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (Typ.) 9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • S 3


    Original     		PDF SiR472ADP SiR472ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12