Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIR164DP Search Results

    SF Impression Pixel

    SIR164DP Price and Stock

    Vishay Siliconix SIR164DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR164DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.525
    		Buy Now
    SIR164DP-T1-GE3 Cut Tape 1,515 1
    • 1 $1.4
    • 10 $1.145
    • 100 $0.8908
    • 1000 $0.61509
    • 10000 $0.61509
    		Buy Now
    SIR164DP-T1-GE3 Digi-Reel 1
    • 1 $1.4
    • 10 $1.145
    • 100 $0.8908
    • 1000 $0.61509
    • 10000 $0.61509
    		Buy Now

    Vishay Siliconix SIR164DP-T1-RE3

    MOSFET N-CH 30V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR164DP-T1-RE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.49795
    		Buy Now

    Vishay Intertechnologies SIR164DP-T1-RE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR164DP-T1-RE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR164DP-T1-RE3 Reel 19 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.51119
    		Buy Now
    Mouser Electronics SIR164DP-T1-RE3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.497
    		Get Quote
    TTI SIR164DP-T1-RE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.497
    		Buy Now

    Vishay Intertechnologies SIR164DP-T1-GE3

    Trans MOSFET N-CH 30V 33.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR164DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR164DP-T1-GE3 Reel 19 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.51555
    		Buy Now
    Mouser Electronics SIR164DP-T1-GE3 4,652
    • 1 $1.4
    • 10 $1.15
    • 100 $0.89
    • 1000 $0.615
    • 10000 $0.525
    		Buy Now
    Newark SIR164DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.559
    		Buy Now
    Bristol Electronics SIR164DP-T1-GE3 6,765
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    SIR164DP-T1-GE3 78
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components SIR164DP-T1-GE3 5,412
    • 1 $1.969
    • 10 $1.969
    • 100 $1.969
    • 1000 $1.969
    • 10000 $0.5907
    		Buy Now
    SIR164DP-T1-GE3 5,412
    • 1 $1.969
    • 10 $1.969
    • 100 $1.969
    • 1000 $1.969
    • 10000 $0.5907
    		Buy Now
    TTI SIR164DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.525
    		Buy Now
    TME SIR164DP-T1-GE3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.91
    		Get Quote
    Component Electronics, Inc SIR164DP-T1-GE3 1,390
    • 1 $9.23
    • 10 $9.23
    • 100 $6.92
    • 1000 $6
    • 10000 $6
    		Buy Now
    EBV Elektronik SIR164DP-T1-GE3 19 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SIR164DPT1GE3

    N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIR164DPT1GE3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SIR164DP Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR164DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A 8-SOIC Original PDF
    SIR164DP-T1-RE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A POWERPAKSO-8 Original PDF

    SIR164DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIR164DP

    Abstract: A7282 65060 spice model 740
    Text: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR164DP 18-Jul-08 A7282 65060 spice model 740

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR164DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0025 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiR164DP 2002/95/EC SiR164DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR164DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0025 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiR164DP 2002/95/EC SiR164DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sir164dp

    Abstract: No abstract text available
    Text: New Product SiR164DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0025 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiR164DP 2002/95/EC SiR164DP-T1-GE3 11-Mar-11

    SiR164DP

    Abstract: TB-17
    Text: New Product SiR164DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0025 at VGS = 10 V 50 0.0032 at VGS = 4.5 V 50 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET


    Original     		PDF SiR164DP 2002/95/EC SiR164DP-T1-GE3 18-Jul-08 TB-17

    8255 application

    Abstract: 8255 application note AN609 SiR164DP 18762M 208255
    Text: SiR164DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR164DP AN609, 09-Apr-09 8255 application 8255 application note AN609 18762M 208255

    samsung r580

    Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917

    ASM1442

    Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BREMEN-15C/17C BREMEN-15C/17C BA41-xxxxxA 100nF C1114 ASM1442 bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1

    MX25L1605DM2I-12G

    Abstract: samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List 6-1. 15" Material List Level .1 .1 .1 .1 .1 .1 .1 .1 .1 Code 0203-001869


    Original     		PDF BA41-01201A BA59-02572A WLAN-802 11BGN 125MM R530/R730 BA99-07566A MX25L1605DM2I-12G samsung R540 service AR5B95 samsung r730 NP303-CQS-2 mx25l1605dm2i NP303-CQS-2-F1 88E8040-A0-NNB2-C000 bremen-ul 88E8040-A0-NNB2C000

    APW7141

    Abstract: tps51620 bremen-ul samsung r730 rt8205 mec1308 Alcor card reader controller AU6336 smd diode S6 67A BA41-XXXXXA cantiga gl40 samsung r530
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF 100nF APW7141 tps51620 bremen-ul samsung r730 rt8205 mec1308 Alcor card reader controller AU6336 smd diode S6 67A BA41-XXXXXA cantiga gl40 samsung r530

    MEC1308-NU

    Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Page. 1 Page. 2 Page. 3 Page. 4


    Original     		PDF VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308

    NPCE781BA0DX

    Abstract: NPCE781 NPCE781B DML D01 RT8209E RT8223BGQW RT8209EGQW-GP BCM57780 RT8209EGQW APX9132H
    Text: 5 4 3 2 Project code: 91.4HD01.001 PCB P/N : 48.4GX01.0SA PCB 版版 : 09919 SA REVISION : PCB STACKUP SYSTEM JV42-DN Block Diagram DDR3 800/1066/1333MHz CRT AMD Champlain CPU S1G4 45W D 16,17 DDR3 20 TOP LCD VCC 4,5,6,7 HDMI S IN OUT AMD RS880M CPU I/F


    Original     		PDF JV42-DN 800/1066/1333MHz 638-Pin uFCPGA638 4HD01 4GX01 RT8223 800/1066/1333MHz RT8209E 16X16 NPCE781BA0DX NPCE781 NPCE781B DML D01 RT8209E RT8223BGQW RT8209EGQW-GP BCM57780 RT8209EGQW APX9132H

    BA41-01190A

    Abstract: mec1308 K4W1G1646E-HC12 SMSC mec1308 tps51621 marvell 88E8059 AU6336C52 20b1 diode samsung crt GC1036
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D D sheet1. Cover - 1 sheet2. Block Diagram -(2)


    Original     		PDF BA41-01190A mec1308 K4W1G1646E-HC12 SMSC mec1308 tps51621 marvell 88E8059 AU6336C52 20b1 diode samsung crt GC1036

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    Nuvoton NPCE781

    Abstract: NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602
    Text: 5 4 3 2 1 Berry Discrete/UMA Schematics Document D C D AMD Danube CPU S1g4 AMD GPU Madison-LP/M96-LP M2 RS880M + SB820M C 2010-03-08 REV : A00 B B <Core Design> Size A4 Document Number 4 3 Rev 2 Sheet ai Berry AMD Discrete/UMA Date: Monday, March 08, 2010


    Original     		PDF Madison-LP/M96-LP RS880M SB820M 4HH01 BQ24745 C6806, C6807, EC7928-EC7932. TP1309. EC704 Nuvoton NPCE781 NPCE781BA0DX nuvoton NPCE781BA0DX npce781 RT8209EGQW 92HD79B1a5 RS880M G5285T11U NPCE781B HP C6602