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Vishay Siliconix SIR472ADP-T1-GE3 MOSFET N-CH 30V 18A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR472ADP-T1-GE3	Cut Tape	6,568		1	1 $1.01 10 $0.629 100 $1.01 1000 $0.28596 10000 $0.28596	Buy Now
	SIR472ADP-T1-GE3	Digi-Reel	6,568		1	1 $1.01 10 $0.629 100 $1.01 1000 $0.28596 10000 $0.28596	Buy Now
	SIR472ADP-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.24748	Buy Now
Vishay Intertechnologies SIR472ADP-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR472ADP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR472ADP-T1-GE3	Reel		18 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 $0.28024	Buy Now
Mouser Electronics	SIR472ADP-T1-GE3					1 $0.95 10 $0.616 100 $0.402 1000 $0.282 10000 $0.202	Get Quote
Bristol Electronics	SIR472ADP-T1-GE3		5,387			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIR472ADP-T1-GE3		4,309			1 $0.81 10 $0.81 100 $0.81 1000 $0.324 10000 $0.2835	Buy Now
TTI	SIR472ADP-T1-GE3	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.216	Buy Now

SIR472ADP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR472ADP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 18A PPAK SO-8		Original	PDF

SIR472ADP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiR472ADP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiR472ADP AN609, 5361m 3760u 3542m 0384m 8090m 6002m 9811m 0647m	PDF
Untitled Abstract: No abstract text available Text: SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a, g 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (TYP.) 9 nC D 5 D 6 • 100 % Rg and UIS tested • Optimized for high-side switching in	Original	SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) a, g 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (TYP.) 9 nC D 5 D 6 • 100 % Rg and UIS tested • Optimized for high-side switching in	Original	SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiR472ADP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a,g RDS(on) () Max. 30 0.0090 at VGS = 10 V 18 0.0115 at VGS = 4.5 V 18 Qg (Typ.) 9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • S 3	Original	SiR472ADP SiR472ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR472ADP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	SiR472ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF