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    Vishay Siliconix SIR874DP-T1-GE3

    MOSFET N-CH 25V 20A PPAK SO-8
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    SIR874DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR874DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 20A PPAK 8SOIC Original PDF

    SIR874DP Datasheets Context Search

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    7485 DATASHEET

    Abstract: datasheet 7485 AN609
    Text: SiR874DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR874DP AN609, 02-Apr-09 7485 DATASHEET datasheet 7485 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR874DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0094 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 G D • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR874DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIR874DP

    Abstract: No abstract text available
    Text: SPICE Device Model SiR874DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR874DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR874DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0094 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 S 2 G D • Notebook CPU Core - High-Side Switch


    Original     		PDF SiR874DP 2002/96lectual 18-Jul-08

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836