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Vishay Siliconix SIRA04DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIRA04DP-T1-GE3	Cut Tape	3,887		1	1 $1.86 10 $1.184 100 $1.86 1000 $0.57705 10000 $0.57705	Buy Now
	SIRA04DP-T1-GE3	Digi-Reel	3,887		1	1 $1.86 10 $1.184 100 $1.86 1000 $0.57705 10000 $0.57705	Buy Now
	SIRA04DP-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.50927	Buy Now
RS	SIRA04DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.21	Get Quote
New Advantage Corporation	SIRA04DP-T1-GE3		3,000		1	1 - 10 - 100 - 1000 - 10000 $0.5788	Buy Now
Vishay Intertechnologies SIRA04DP-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA04DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA04DP-T1-GE3	Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.4674	Buy Now
Mouser Electronics	SIRA04DP-T1-GE3		11,752			1 $1.47 10 $1 100 $0.702 1000 $0.543 10000 $0.475	Buy Now
Bristol Electronics	SIRA04DP-T1-GE3		962			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIRA04DP-T1-GE3		769			1 $1.86 10 $1.86 100 $0.93 1000 $0.744 10000 $0.744	Buy Now
TTI	SIRA04DP-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.444	Buy Now

TME	SIRA04DP-T1-GE3				1	1 $1.154 10 $0.946 100 $0.727 1000 $0.596 10000 $0.596	Get Quote
Avnet Asia	SIRA04DP-T1-GE3			23 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIRA04DP-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIRA04DPT1GE3 N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIRA04DPT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIRA04DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA04DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A POWERPAK		Original	PDF

SIRA04DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP 2002/95/EC SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP SiRA04DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiRA04DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiRA04DP AN609, 7147m 0050m 0965m 3956m 4955u 6446m 2761m 8394n	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiRA04DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP 2002/95/EC SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP 2002/95/EC SiRA04DP-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP SiRA04DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP SiRA04DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
62510 Abstract: SIRA04DP Text: SPICE Device Model SiRA04DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiRA04DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62510	PDF
Untitled Abstract: No abstract text available Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8	Original	SiRA04DP SiRA04DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Portable Computers Notebooks 4 Ultrabooks 5 Tablet PCs 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay	Original	LLP2510 LLP2510-10L VMN-MS6761-1212	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402	PDF
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip	PDF

POWERPAK SO8 Abstract: SIS32 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32	PDF
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Portable Computers One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer ポータブルコンピューターノートブック 4 ウルトラブック 5	Original	LLP2510 LLP2510-10L VMN-MS6792-1304-COPC	PDF
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs	PDF

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SIRA04DP Datasheets (1)

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PowerPAK 1212-8

POWERPAK SO8

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N-Channel MOSFETs