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Vishay Siliconix SIJ482DP-T1-GE3 MOSFET N-CH 80V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIJ482DP-T1-GE3	Cut Tape	2,487		1	1 $2.53 10 $1.628 100 $2.53 1000 $0.82363 10000 $0.82363	Buy Now
	SIJ482DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.725	Buy Now
Vishay Intertechnologies SIJ482DP-T1-GE3 N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SIJ482DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIJ482DP-T1-GE3	Reel		27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.7134	Buy Now
Mouser Electronics	SIJ482DP-T1-GE3		44,373			1 $2.07 10 $1.4 100 $1.07 1000 $0.79 10000 $0.725	Buy Now
TTI	SIJ482DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.725	Buy Now
TME	SIJ482DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $1.14	Get Quote
EBV Elektronik	SIJ482DP-T1-GE3			28 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIJ482DPT1GE3 N-CHANNEL 80 V (D-S) MOSFET Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIJ482DPT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIJ482DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIJ482DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 60A SO-8		Original	PDF

SIJ482DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested	Original	SiJ482DP SiJ482DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested	Original	SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested	Original	SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SIJ482DP Abstract: No abstract text available Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested	Original	SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
63728 Abstract: SIJ482DP Text: New Product SiJ482DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A) a, g Qg (Typ.) 0.0062 at VGS = 10 V 0.0065 at VGS = 7.5 V 80 60 24 nC 0.0095 at VGS = 4.5 V TrenchFET Power MOSFET 100 % Rg and UIS Tested	Original	SiJ482DP SiJ482DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63728	PDF
WE 1688 Abstract: No abstract text available Text: SPICE Device Model SiJ482DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	SiJ482DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 WE 1688	PDF
Untitled Abstract: No abstract text available Text: SiJ482DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiJ482DP AN609, 1573m 7772m 3921m 1475m 9035m 1654m 4080m 1649m	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiJ482DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	SiJ482DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
so8 footprint Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit	Original	SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs	PDF