hard disk ATA pcb schematic
Abstract: samsung 1Gb nand flash SAMSUNG NAND FLASH K9F5608 K9F5608 intel nand flash K9F1G08 CF-CON50A flash chip 512mb NAND FLASH 64MB SAMSUNG DATASHEET CHIP CAPACITOR
Text: SAMSUNG ATA FLASH CONTROLLERS REFERENCE DESIGN MANUAL Samsung’s ATA Flash Controllers Reference Design Manual CompactFlash / PC Card / IDE Disk HELP DESK - About Controller : engineer@sec.samsung.com - About Flash : ywko@sec.samsung.com Samsung Electronics Co.,LTD
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S3CI910X
256Mb
128MB
hard disk ATA pcb schematic
samsung 1Gb nand flash
SAMSUNG NAND FLASH K9F5608
K9F5608
intel nand flash
K9F1G08
CF-CON50A
flash chip 512mb
NAND FLASH 64MB
SAMSUNG DATASHEET CHIP CAPACITOR
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K9F2G08U0C
Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-10-ALL-001
K9F2G08U0C
K9K8G08U0D
K9ABG08U0A
K4X2G323PC
K9F4G08U0B-PCB0
K9F1G08U0C
K9F2G08U0B
K9F2G08U0B-PCB0
K9F1G08U0D-SCB0
K9WBG08U1M-PIB0
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SAMSUNG GDDR4
Abstract: GDDR4 K4D263238 84 FBGA GDDR K4J52324Q SAMSUNG GDDR3 gddr3 graphics card SAMSUNG SEMICONDUCTOR
Text: Samsung High-Performance GDDR4 Graphics Memory Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung’s GDDR4 is next-generation, Three-dimensional graphics applications require advanced memory with exceptional performance. Samsung’s GDDR4 memory delivers an ultra-fast
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512Mb
4Mx32
K4D263238
8Mx16
K4D261638
128Mb
DS-07-GDRAM-001
SAMSUNG GDDR4
GDDR4
K4D263238
84 FBGA
GDDR
K4J52324Q
SAMSUNG GDDR3
gddr3
graphics card
SAMSUNG SEMICONDUCTOR
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gddr3
Abstract: SAMSUNG LAPTOP SAMSUNG GDDR4 K4D263238 84 FBGA K4D55323 K4J52324Q samsung K4D261638 84FBGA
Text: Samsung HighPerformance 512Mb GDDR3 Graphics Memory Samsung’s GDDR3 is next-generation, JEDEC-standard graphics memory for the most advanced 3D applications. Faster, Denser Memory for Advanced 3D Graphics Requirements Samsung graphics memory has played an important
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512Mb
200Mhz
128Mb
8Mx16
K4D261638F-TC5A
DS-06-GDRAM-001
gddr3
SAMSUNG LAPTOP
SAMSUNG GDDR4
K4D263238
84 FBGA
K4D55323
K4J52324Q
samsung
K4D261638
84FBGA
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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74lvc3245
Abstract: SAMSUNG NAND FLASH SAMSUNG NAND FLASH TRANSLATION LAYER samsung NAND date code marking samsung Nand "bad block" smartmedia ecc SAMSUNG NAND FLASH TRANSLATION LAYER FTL samsung hdd f3 SmartMedia Logical Format SAMSUNG NAND FTL
Text: Confidential SAMSUNG NAND FLASH APPLICATION NOTE Software Driver of SmartMedia TM (Ver 3.0) MEMORY PRODUCT & TECHNOLOGY SAMSUNG ELECTRONICS Co., LTD 1 ELECTRONICS Confidential SAMSUNG NAND FLASH Revision History Revision Date Name 1.0 1.1 2.0 98/12/10 99/03/04
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128MB
0000h
0001h
0002h
12bit
16bit
74lvc3245
SAMSUNG NAND FLASH
SAMSUNG NAND FLASH TRANSLATION LAYER
samsung NAND
date code marking samsung Nand
"bad block" smartmedia ecc
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
samsung hdd f3
SmartMedia Logical Format
SAMSUNG NAND FTL
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samsung 8Gb nand flash
Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash
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108MB/s
256Mb
BR-06-NAND-001
samsung 8Gb nand flash
oneNand
onenand xsr
eXtended Sector Remapper
oneNand flash
SRAM-512Mb
samsung NAND FLASH BGA
NAND FLASH BGA
samsung 2GB Nand flash
samsung xsr
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LDD5
Abstract: Samsung ddr2 DDR2 ddr2 samsung computer motherboard DDR circuit diagram DDR2 Datasheet notebook circuit diagram DDR2-533 DDR400 M470T3354CZ3
Text: Samsung DDR2: When Performance Matters Maximum Speed and Mobility for Notebooks Samsung DDR2 SODIMMs are available in densities from 256MB to 2GB and feature speeds up to 667Mb per second. Low Power and Fast Speed for Notebook PCs DDR2 SDRAM SODIMMs from Samsung
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256MB
667Mb
se669AZ0
256Mx8
8K/64ms
DS-06-DRAM-003
LDD5
Samsung ddr2
DDR2
ddr2 samsung
computer motherboard DDR circuit diagram
DDR2 Datasheet
notebook circuit diagram
DDR2-533
DDR400
M470T3354CZ3
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32 inch TV samsung lcd Schematic
Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A
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965PM
BA41-0071
BA41-00717A
BA41-00718A
TP18631
TP18634
TP18650
TP18635
TP18636
32 inch TV samsung lcd Schematic
U574
27b1 diode
AP4435
22B2 DIODE
58c3
SLB9635TT1.2
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2SD618
Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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Yonah667
BA41-00697A
CALISTP11574
TP11575
TP11578
TP11579
TP11516
TP11517
TP11520
2SD618
MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM
BC615
DIODE 20B2
samsung u252
20b1 diode
TP-107-02
SAMSUNG R60 plus
S3F94
SLB9635TT1.2
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Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.
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AN1838
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
Samsung k9f1208u
SAMSUNG NAND FLASH
samsung nand
WSOP48
K9F28
NAND FLASH BGA
samsung 1Gb nand flash
NAND01G cache program
"NAND Flash"
128M NAND Flash Memory
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M464S3323BN0
Abstract: No abstract text available
Text: Shrink-TSOP 144pin SDRAM SODIMM M464S3323BN0 M464S3323BN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on sTSOP2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3323BN0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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144pin
M464S3323BN0
M464S3323BN0
32Mx64
16Mx8,
144-pin
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Untitled
Abstract: No abstract text available
Text: Shrink-TSOP 144pin SDRAM SODIMM M464S3323BN0 M464S3323BN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on sTSOP2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3323BN0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M464S3323BN0
M464S3323BN0
32Mx64
16Mx8,
144-pin
144pin
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M464S3323CN0
Abstract: No abstract text available
Text: Shrink-TSOP Preliminary 144pin SDRAM SODIMM M464S3323CN0 M464S3323CN0 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on sTSOP2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3323CN0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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144pin
M464S3323CN0
M464S3323CN0
32Mx64
16Mx8,
144-pin
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KMM5324004BSW
Abstract: KMM5324004BSWG
Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5324004BSW/BSWG
KMM5324004BSW/BSWG
4Mx16,
KMM5324004B
4Mx32bits
KMM5324004B
4Mx16bits
72-pin
KMM5324004BSW
KMM5324004BSWG
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KMM5324004BSW
Abstract: KMM5324004BSWG km416c4104bs
Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5324004BSW/BSWG
KMM5324004BSW/BSWG
4Mx16,
KMM5324004B
4Mx32bits
KMM5324004B
4Mx16bits
72-pin
KMM5324004BSW
KMM5324004BSWG
km416c4104bs
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M464S3323BN-L1H
Abstract: M464S3323BN-L1L
Text: Shrink-TSOP 144pin SDRAM SODIMM M464S3323BN M464S3323BN SDRAM SODIMM 32Mx64 SDRAM SODIMM based on sTSOP2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S3323BN is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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144pin
M464S3323BN
M464S3323BN
32Mx64
16Mx8,
144-pin
M464S3323BN-L1H
M464S3323BN-L1L
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KMM464S3323BN-FL
Abstract: KM48S16030BN
Text: Shrink-TSOP 144pin SDRAM SODIMM KMM464S3323BN KMM464S3323BN SDRAM SODIMM 32Mx64 SDRAM SODIMM based on sTSOP2 16Mx8, 4Banks, 4K Refresh, 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S3323BN is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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144pin
KMM464S3323BN
KMM464S3323BN
32Mx64
16Mx8,
144-pin
KMM464S3323BN-FL
KM48S16030BN
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capacitor taa
Abstract: KMM5328004BSW KMM5328004BSWG
Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages
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KMM5328004BSW/BSWG
KMM5328004BSW/BSWG
4Mx16,
KMM5328004B
8Mx32bits
KMM5328004B
4Mx16bits
72-pin
capacitor taa
KMM5328004BSW
KMM5328004BSWG
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • V'ìbMmE GD1SE3T E74 KMM5916000/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5916000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung
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KMM5916000/T
KMM5916000/T
KM41C16000/T
24-pin
30-pin
22/uF
KMM5916000-6
110ns
KMM5916000-7
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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KMM5362000A1/A1G
KMM5362000A1
bitsX36
20-pin
72-pin
130ns
150ns
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41C16000
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung
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OCR Scan
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16000/T
16Mx8
KMM5816000/T
5816000/T
41C16000/T
24-pin
30-pin
KMM5816000-6
110ns
KMM5816000-7
41C16000
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KMM5361000/A
Abstract: No abstract text available
Text: SAMSUNG E LECTRONI CS INC b4E T> • TTbMlMS G 01 4 57 5 KMM5361OOOA1/A1G DhD DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES The Samsung KMM5361000A1 is a 1M bits x 36 Dynamic RAM high density memory module. The Samsung KMM5361000A1 consist of eight CMOS 1M x4 bit
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OCR Scan
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KMM5361OOOA1/A1G
KMM5361000A1
20-pin
72-pin
KMM5361000A1-7
130ns
M5361OOOA1
150ns
KMM5361000/A
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM332V224AT KMM332V224AT Fast Page Mode 2Mx32 DRAM DIMM Low Power, 1K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM332V224AT is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM332V224AT consists of four CMOS 1Mx16bit DRAMs in 44-pin TSOPII packages
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OCR Scan
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KMM332V224AT
KMM332V224AT
2Mx32
1Mx16bit
44-pin
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