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    TXC Corporation 7C-66.667MBE-T

    XTAL OSC XO 66.6670MHZ CMOS SMD
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    Mouser Electronics 7C-66.667MBE-T
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    TXC Corporation TC-66.667MBD-T

    MEMS OSC XO 66.6670MHZ CMOS SMD
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    DigiKey TC-66.667MBD-T Reel 3,000
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    TC-66.667MBD-T Digi-Reel 1
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    TC-66.667MBD-T Cut Tape 1
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    TXC Corporation TA-66.667MBD-T

    MEMS OSC XO 66.6670MHZ CMOS SMD
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    DigiKey TA-66.667MBD-T Reel 1,000
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    Newark TA-66.667MBD-T Cut Tape 1,000
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    TXC Corporation TA-66.667MBE-T

    MEMS OSC XO 66.6670MHZ CMOS SMD
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    DigiKey TA-66.667MBE-T Reel 1,000
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    TXC Corporation TD-66.667MBD-T

    MEMS OSC XO 66.6670MHZ CMOS SMD
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    DigiKey TD-66.667MBD-T Digi-Reel 1
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    TD-66.667MBD-T Cut Tape 1
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    TD-66.667MBD-T Reel 3,000
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    667MB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    I-CUBE

    Abstract: OCX256
    Text: Technical Note OCX256 Layout Guidelines 1.0 Introduction The OCX256 is packaged in a 792-ball plastic TBGA package, and is an SRAM-based bit-oriented switching device offering flow-through NRZ datarates of 667Mb/s and registered data modes of 333MHz. The 128 Inputs and 128 Outputs are each configured as dedicated differential ports. The


    Original     		OCX256 792-ball 667Mb/s 333MHz. I-CUBE PDF

    LDD5

    Abstract: Samsung ddr2 DDR2 ddr2 samsung computer motherboard DDR circuit diagram DDR2 Datasheet notebook circuit diagram DDR2-533 DDR400 M470T3354CZ3
    Text: Samsung DDR2: When Performance Matters Maximum Speed and Mobility for Notebooks Samsung DDR2 SODIMMs are available in densities from 256MB to 2GB and feature speeds up to 667Mb per second. Low Power and Fast Speed for Notebook PCs DDR2 SDRAM SODIMMs from Samsung


    Original     		256MB 667Mb se669AZ0 256Mx8 8K/64ms DS-06-DRAM-003 LDD5 Samsung ddr2 DDR2 ddr2 samsung computer motherboard DDR circuit diagram DDR2 Datasheet notebook circuit diagram DDR2-533 DDR400 M470T3354CZ3 PDF

    DDR2-400

    Abstract: DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps/400Mbps (max.)


    Original     		EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E PDF

    Untitled

    Abstract: No abstract text available
    Text: 1GB DDR2 667 VLP SDRAM UDIMM Part Number Bandwidth Speed Grade 78.01G9O.42K 5.3GB/sec Max CAS Frequency Latency 333MHz CL5 667Mbps Density Organization 1GB 128Mx64 Component Number of Composition Rank 128Mx8*8


    Original     		01G9O 333MHz 667Mbps 128Mx64 128Mx8 PDF

    lpddr

    Abstract: FCRAM DDR2 x32 ddr1 ram 200806 256-MBIT
    Text: RAM’s Power Consumption Comparison #1 „ Power Consumption: FCRAM vs. Equivalent Memories example Conditions： 256M-bit, BL=8, R:W=1:1, 4-bank interleave, 2.6GByte/s Power Consumption (mW) z z z z DDR2: 2pcs, x16, 667Mbps, CL=12pF, ODT=50ohm DDR1: 2pcs, x32, 333Mbps, CL=12pF


    Original     		256M-bit, 667Mbps, 50ohm 333Mbps, 2008FUJITSU 800Mbps, lpddr FCRAM DDR2 x32 ddr1 ram 200806 256-MBIT PDF

    OCX256

    Abstract: BGA Solder Ball 1mm LAYOUT GUIDELINES
    Text: Application Note 5039 OCX256 Layout Guidelines 1.0 Introduction The OCX256 is packaged in a 792-ball plastic TBGA package, and is an SRAM-based bit-oriented switching device offering flow-through NRZ datarates of 667Mb/s and registered data modes of 333MHz. The 128 Inputs and 128 Outputs are each configured as dedicated differential ports. The


    Original     		OCX256 792-ball 667Mb/s 333MHz. AN500757 BGA Solder Ball 1mm LAYOUT GUIDELINES PDF

    MAX3920

    Abstract: No abstract text available
    Text: 19-1853; Rev 2; 12/02 +3.3V, 10.7Gbps 1:16 Deserializer with LVDS Outputs Features ♦ Supports Serial Data Rates Up to 10.7Gbps ♦ 10Gbps/10.7Gbps Serial to 622Mbps/667Mbps Parallel Conversion ♦ Single +3.3V Supply ♦ 900mW Operating Power ♦ CML Serial Clock and Data Inputs


    Original     		10Gbps/10 622Mbps/667Mbps 900mW SONET/OC-192 SDH/STM-64 MAX3950EGK 622Mbps PD15SDI+ MAX3950 MAX3920 PDF

    bt 109

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5108AGBG 64M words x 8 bits Features • Density: 512M bits • Organization  16M words × 8 bits × 4 banks • Package: 60-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps (max.)


    Original     		EDE5108AGBG 60-ball 667Mbps/533Mbps M01E0107 bt 109 PDF

    MAX3920

    Abstract: maxim 1999 circuit diagram MAX3940 MAX3950 MAX3950EGK MAX3925
    Text: 19-1853; Rev 0; 11/00 +3.3V, 10.7Gbps 1:16 Deserializer with LVDS Outputs Features ♦ Supports Serial Data Rates Up to 10.7Gbps ♦ 10Gbps/10.7Gbps Serial to 622Mbps/667Mbps Parallel Conversion ♦ Single +3.3V Supply ♦ 900mW Operating Power ♦ CML Serial Clock and Data Inputs


    Original     		10Gbps/10 622Mbps/667Mbps 900mW SONET/OC-192 SDH/STM-64 MAX3950EGK 622Mbps PD15SDI+ 10x10x0 MAX3950 MAX3920 maxim 1999 circuit diagram MAX3940 MAX3950 MAX3950EGK MAX3925 PDF

    max3920

    Abstract: max3925
    Text: 19-1853; Rev 0; 11/00 +3.3V, 10.7Gbps 1:16 Deserializer with LVDS Outputs Features ♦ Supports Serial Data Rates Up to 10.7Gbps ♦ 10Gbps/10.7Gbps Serial to 622Mbps/667Mbps Parallel Conversion ♦ Single +3.3V Supply ♦ 900mW Operating Power ♦ CML Serial Clock and Data Inputs


    Original     		MAX3950 10Gbps 16-bit 622Mbps 68-pin 900mW. 10Gbps/10 622Mbps/667Mbps 900mW max3920 max3925 PDF

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		240PIN 64Mx8 TS128MLQ64V6J TS128MLQ64V6J 64bits DDR2-667 16pcs 64Mx8bits 240-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG PDF

    M378T2953CZ3

    Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
    Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		256MB, 512MB, 240pin 512Mb 64/72-bit 32Mx64 M378T3354CZ3 M378T3354CZ0 K4T51163QC M378T2953CZ3 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108 PDF

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 JM388Q643A-6 Placement Description The JM388Q643A-6 is a 128M x 64bits DDR2-667 Unbuffered DIMM. The JM388Q643A-6 consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		240PIN 64Mx8 JM388Q643A-6 JM388Q643A-6 64bits DDR2-667 16pcs 64Mx8bits 240-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 512MB With 64Mx8 CL5 JM667QLJ-512M Description Placement The JM667QLJ-512M is a 64M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		240PIN 512MB 64Mx8 JM667QLJ-512M JM667QLJ-512M 64bits DDR2-667 64Mx8bits 240-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 ECC Unbuffered DIMM 2GB With 128Mx8 CL5 TS256MLQ72V6U Description Placement The TS256MLQ72V6U is a 256M x 72bits DDR2-667 Unbuffered DIMM. The TS256MLQ72V6U consists of 18 pcs 128Mx8bits DDR2 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit


    Original     		240PIN 128Mx8 TS256MLQ72V6U TS256MLQ72V6U 72bits DDR2-667 128Mx8bits 240-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 0.72” 1GB With 64Mx8 CL5 TS128MLQ64V6J • Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed circuit


    Original     		240PIN 64Mx8 TS128MLQ64V6J TS128MLQ64V6J 64bits DDR2-667 16pcs 64Mx8bits 240-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 2GB With 128Mx8 CL5 JM667QLU-2G • Description Placement The JM667QLU-2G is a 256M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLU-2G consists of 16pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		240PIN 128Mx8 JM667QLU-2G JM667QLU-2G 64bits DDR2-667 16pcs 128Mx8bits 240-pin PDF

    DDR2-400

    Abstract: DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820
    Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4ABFA 256M words x 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization  256M words × 72 bits, 1 rank • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		EBE20RE4ABFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0873E30 DDR2-400 DDR2-533 DDR2-667 EBE20RE4ABFA EBE20RE4ABFA-4A-E EBE20RE4ABFA-5C-E EBE20RE4ABFA-6E-E CS 3820 PDF

    EBE10AD4AGFA-6E-E

    Abstract: DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11
    Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10AD4AGFA 128M words x 72 bits, 1 Rank Specifications Features • Density: 1GB • Organization  128M words × 72 bits, 1 rank • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory


    Original     		EBE10AD4AGFA 240-pin 667Mbps/533Mbps/400Mbps cycles/64ms M01E0107 E0865E11 EBE10AD4AGFA-6E-E DDR2-400 DDR2-533 DDR2-667 EBE10AD4AGFA EBE10AD4AGFA-4A-E EBE10AD4AGFA-5C-E E0865E11 PDF

    7809 voltage regulator datasheet

    Abstract: 7809 voltage regulator voltage regulator 7809 INL03991-02 7809 data sheet national semiconductor embedded system projects pdf free download toshiba web cam TB62705 ST 7809 voltage regulator excalibur Board
    Text: & News Views Second Quarter 2001 Newsletter for Altera Customers Altera Provides the Complete I/O Solution with the New APEX II Device Family Altera introduces the APEXTM II device family— flexible, high-performance, high-density programmable logic devices PLDs that deliver


    Original     		624-megabit 7809 voltage regulator datasheet 7809 voltage regulator voltage regulator 7809 INL03991-02 7809 data sheet national semiconductor embedded system projects pdf free download toshiba web cam TB62705 ST 7809 voltage regulator excalibur Board PDF

    RDRAM CONCURRENT

    Abstract: samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H
    Text: Preliminary Concurrent RDRAM KM48 9 RC2H 16/18Mbit R D R A M 2M X 8/9bit Concurrent RAMBUS DRAM Revision 0.7 February 1998 Rev. 0.7 (Feb. 1998) Preliminary Concurrent RDRAM KM48(9)RC2H Revision History Revision 0.5 (October 1997) - Preliminary • . Changed Peak TrasferRate from 700Mbps to 667Mbps. (page 1)


    OCR Scan     		16/18Mbit 700Mbps 667Mbps. SHP-32 RDRAM CONCURRENT samsung concurrent rdram KM49RC2H-A66 km49rc2h-a60 km-48 concurrent RDRAM 72 KM49RC2H PDF