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    AP4435 Search Results

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    AP4435 Price and Stock

    APEM Inc AP4435GYT

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics AP4435GYT 3,000
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    APEM Inc AP4435GYT-HF

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics AP4435GYT-HF 1,200
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    AP4435 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AP4435D Advanced Power Electronics P-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF
    AP4435GH-HF Advanced Power Electronics P-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF
    AP4435GJ-HF Advanced Power Electronics P-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF
    AP4435GM-HF Advanced Power Electronics P-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF
    AP4435GYT-HF Advanced Power Electronics P-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF
    AP4435M Advanced Power Technology P-CHANNEL ENHANCEMENT MODE Original PDF

    AP4435 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AP4435GYT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Size & Lower Profile RoHS Compliant & Halogen-Free BVDSS RDS ON ID D -30V 21m -11A G S D Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP4435GYT-HF 100ms

    4435GM

    Abstract: 4435g AP4435GMHF ap4435gm AP4435GM-HF
    Text: AP4435GM-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant SO-8 S S S


    Original     		PDF AP4435GM-HF 4435GM 4435GM 4435g AP4435GMHF ap4435gm AP4435GM-HF

    AP4435

    Abstract: No abstract text available
    Text: AP4435GYT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free D BVDSS RDS ON ID -30V 21mΩ -11A G S D Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP4435GYT-HF 100us 100ms AP4435

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4435GM-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance BV DSS -30V Fast Switching Performance RDS ON 20mΩ G RoHS-compliant, Halogen-free S ID -9A Description D Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP4435GM-HF-3 AP4435GM-HF-3 AP4435 4435GM

    ap4435m

    Abstract: AP4435 P-channel power mosfet SO-8 BVdss 30V 20mOhm
    Text: AP4435M Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low On-resistance D D D ▼ Fast Switching BVDSS -30V RDS ON 20mΩ ID -8A G SO-8 S S S Description D The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP4435M ap4435m AP4435 P-channel power mosfet SO-8 BVdss 30V 20mOhm

    AP4435

    Abstract: AP4435D
    Text: AP4435D Advanced Power Electronics Corp. ▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS ON ID D D D D -30V 20mΩ -9A G S PDIP-8 S S Description D The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP4435D P10ms 100ms 90oC/W Fig10. AP4435 AP4435D

    4435GM

    Abstract: ap4435gm 4435g AP4435 ap4435g
    Text: AP4435GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Low On-resistance D D BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic SO-8 S S S -9A G Description D


    Original     		PDF AP4435GM 4435GM 4435GM ap4435gm 4435g AP4435 ap4435g

    4435GJ

    Abstract: 4435gj MOSFET
    Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D Lower On-resistance RDS ON Fast Switching Characteristic ID -30V 20m -40A G S Description G The TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP4435GH/J O-252 AP4435GJ) O-251 O-251 4435GJ 4435GJ 4435gj MOSFET

    Untitled

    Abstract: No abstract text available
    Text: AP4435GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D Lower On-resistance RDS ON Fast Switching Characteristic ID RoHS Compliant & Halogen-Free -30V 20m -40A G S Description


    Original     		PDF AP4435GH/J-HF O-252 AP4435GJ) O-25ge 100us 100ms

    AP4435GH

    Abstract: AP4435 ap4435g
    Text: AP4435GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP4435GH/J-HF O-252 AP4435GJ) O-251 100us 100ms AP4435GH AP4435 ap4435g

    Untitled

    Abstract: No abstract text available
    Text: AP4435GYT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free D BVDSS RDS ON ID -30V 21mΩ -11A G S D Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP4435GYT-HF 100us 100ms

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4435GYT-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Good Thermal Performance Low On-resistance G BV DSS -30V R DS ON 21mΩ ID RoHS-compliant, halogen-free -11A S Description D Advanced Power MOSFETs from APEC provide the designer with


    Original     		PDF AP4435GYT-HF-3 AP4435 4435GYT

    4435GH

    Abstract: 4435GJ 4435gj MOSFET AP4435GH AP4435GJ 4435*gj 4435g AP4435 marking codes transistors SSs 4435
    Text: AP4435GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance BVDSS -30V RDS ON 20mΩ ID ▼ Fast Switching Characteristic -40A G S Description The TO-252 package is widely preferred for all commercial-industrial


    Original     		PDF AP4435GH/J O-252 AP4435GJ) O-251 O-251 4435GJ 4435GH 4435GJ 4435gj MOSFET AP4435GH AP4435GJ 4435*gj 4435g AP4435 marking codes transistors SSs 4435

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4435GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristics Low On-Resistance G RoHS-compliant, halogen-free BV DSS -30V RDS ON 20mΩ ID -20A S Description G Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP4435GH/J-HF-3 O-252 AP4435GH-HF-3 O-252 O-251 AP4435GJ-HF-3) O-251 AP9435 9435GJ

    Untitled

    Abstract: No abstract text available
    Text: AP4435GYT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Small Size & Lower Profile ▼ RoHS Compliant & Halogen-Free D BVDSS RDS ON ID -30V 21mΩ -11A G S D Description Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP4435GYT-HF 100ms

    BA41-00727A

    Abstract: LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus
    Text: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D TORINO 2 g n l u a s i t m


    Original     		PDF 965GM BA41-00727A TP17351 7SZ08 TP16469 TP16470 LTST-C193TBKT-AC A3212ELH/HED55XXU12 MT539 TP16471 LE88CLGM 82801 hbm IDTCV179 20D2G q231 samsung lcd tv power supply schematic NH82801HEM NB8M-SE RB1 Wlan Cardbus

    samsung 822

    Abstract: 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung
    Text: -이 기술 자산으로 승인자만이 사용할사용할 수 있습니다 이 문서는 문서는삼성전자의 삼성전자의 기술 자산으로 승인자만이 수 있습니다 - This can notnot be be used without Samsung's authorization ThisDocument


    Original     		PDF CK-505 EMC2102 478pin samsung 822 37 TV samsung lcd Schematic circuit diagram samsung lcd tv power supply schematic schematic diagram crt tv samsung BD40 SAMSUNG TV 40 LCD SAMSUNG ELECTRONICS BA44 schematic atx 2.03 P4 37 TV samsung lcd Schematic g1003 lyon samsung

    AN12947A

    Abstract: intel g41 crb PL1129 G547F2P81U LFE9249-R PL-1129 Delta lfe9249r SLG8SP513V g547f2 intel g41 bios flash crb
    Text: 5 4 3 2 1 VER : 1A ZK6 MB Block Diagram Description uma / mxm 00 / 10 LM95245 Thermal Sensor D PENRYN 479 uFCPGA Fan Driver P29 FSB BOM Option Table Description EXT VGA SP@ SPECIAL FOR EXT/INT VGA * PCIE CH7318 HDMI Level Shifter P19 CLOCK GENERATOR P2 DNI


    Original     		PDF 31ZK6MB0000 41ZK6CS0000 51ZK6SS0000 31ZK6MB0010 41ZK6CS0010 51ZK6SS0010 LM95245 CH7318 SLG8SP513VTR 800/1066MHZ) AN12947A intel g41 crb PL1129 G547F2P81U LFE9249-R PL-1129 Delta lfe9249r SLG8SP513V g547f2 intel g41 bios flash crb

    SLB9635TT12

    Abstract: SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 BA41-00905A 20B3 diode BA09-00009A B503 F
    Text: SENS X360 A B C D 4 SAMSUNG PROPRIETARY 3 4 HJ KIM Jun PARK T.R. Date 3 JS EUH APPROVAL : Dev. Step Revision CHECK BA41-00906A GCE : PR/MP : 1.1 DRAW Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page. Page.


    Original     		PDF BA41-00905A 220nF 12MHZ BAV99LT1 100nF MX25L4005AM2C-12G 15-A4 14-C2 14-C2 SLB9635TT12 SLB9635TT1.2 32 inch TV samsung lcd Schematic fairchild diode smd code aa35 SC454 slb9635 20B3 diode BA09-00009A B503 F

    88SA8052

    Abstract: JMH330 marvell 88SA8052 SLG8SP513VTR RTL8103EL RT8206 UP6111AQDD 88SE8040 ICS9LPRS365BKLFT quanta
    Text: 5 4 3 2 1 CPU FSB 133MHz ZA3 PCB STACK UP SCH FSB (133MHz) ZA3(11.6") Block Diagram LAYER 1 : TOP SCH PCIE (100MHz) SCH DA (96MHz) LAYER 2 : GND D CLOCK GEN CK505 (SLG8SP513VTR ,ICS9LPRS365BKLFT) SCH DB (100MHz) LAYER 3 : IN1 Intel@Atom(Silverthorne) LAYER 4 : IN2


    Original     		PDF 133MHz) Z520/Z530 100MHz) 96MHz) CLK14 31818MHz) 88SA8052 JMH330 marvell 88SA8052 SLG8SP513VTR RTL8103EL RT8206 UP6111AQDD 88SE8040 ICS9LPRS365BKLFT quanta

    CX20561

    Abstract: WPCE775 rtm870t OZ8116LN 8116l cx20561-15z RTM870T-690 oz8116l turion 64 x2 pin diagram BCM5784M
    Text: 5 4 3 2 1 01 Z07 SYSTEM BLOCK DIAGRAM VCC_CORE DDRII-SODIMM1 +1.8VSUS +SMDDR_VREF D PG 8,9 AMD S1g1 HOST 200MHz Athlon Rev.F/G Dual-Core 31W/35W PCIE 100MHz DDR II 667 MHZ D DDRII-SODIMM2 +1.8VSUS +SMDDR_VREF +1.2V +2.5V +1.8VSUS VCC_CORE +SMDDR_VTERM CPU THERMAL


    Original     		PDF 1W/35W 200MHz 100MHz 48MHz 318MHz 66MHz RS690MC BCM5784M 8VSU3/16 AO3409. CX20561 WPCE775 rtm870t OZ8116LN 8116l cx20561-15z RTM870T-690 oz8116l turion 64 x2 pin diagram BCM5784M

    nc10 samsung

    Abstract: 22p smd samsung crt monitor circuit diagram schematic diagram n270 schematic lcd inverter samsung IDTCV179BNLG 88E8057 945GSE Express Chipset Schematic SC454 Voltage Regulator Circuit e20 220v
    Text: NC10 A B C D 4 SAMSUNG PROPRIETARY 3 4 : PV : 1.0 : 2008.08.20 Dev. Step Revision T.R. Date 3 APPROVAL : PCB Part No CHECK : WINCHESTER MAIN Model Name CPU : INTEL DIAMONDVILLE Chip Set : INTEL 945GSE Remarks : DRAW Page. 1 Page. 2 Page. 3 Page. 4 Page. 5


    Original     		PDF 945GSE Sheet45 Sheet46 Sheet47 Sheet48 Sheet49 Sheet50 Sheet51 Sheet52 Isl6256a nc10 samsung 22p smd samsung crt monitor circuit diagram schematic diagram n270 schematic lcd inverter samsung IDTCV179BNLG 88E8057 945GSE Express Chipset Schematic SC454 Voltage Regulator Circuit e20 220v

    samsung r580

    Abstract: BA41-01174A marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BA41-01174A 100nF MIC502 B4013AM423-32 MIC500 SOM4013SL-G443-C1033 samsung r580 marvell 88E8059 88E8059 SMSC mec1308 TPS51125 mec1308 tps51125 SCHEMATIC smd diode code MK a8 c917

    ASM1442

    Abstract: bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 8. Block Diagram and Schematic D C B A 4 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL


    Original     		PDF BREMEN-15C/17C BREMEN-15C/17C BA41-xxxxxA 100nF C1114 ASM1442 bd82hm55 SMSC mec1308 mec1308 Intel hm55 JLCD500 HM55 CRB smsc mec1308-nu LTST-C193TBKT-AC N11X-GE1