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    S13373 Search Results

    S13373 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1337-33BQ Hamamatsu Photonics Si photodiode Original PDF
    S1337-33BQ Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1337-33BR Hamamatsu Photonics Si photodiode Original PDF
    S1337-33BR Unknown The Optical Devices Data Book (Japanese) Scan PDF

    S13373 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		KSPD0001E09 near IR photodiodes S8745-01 S8558 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si photodiodes S1337 series For UV to I R, precision photometry Features Applications High UV sensitivity: QE 75% λ= 200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR


    Original     		S1337 S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR S1337-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: Siフォトダイオード S1337シリーズ 紫外～赤外精密測光用フォトダイオード 特長 用途 紫外高感度 石英窓タイプ : QE 75% (λ=200 nm) 低容量 分析機器 光計測機器など 構成／絶対最大定格 型名 S1337-16BQ


    Original     		S1337ã S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR S1337-21 PDF

    S8558

    Abstract: No abstract text available
    Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


    Original     		PDF

    S1337-BR

    Abstract: S1337-33BR S13373
    Text: Si photodiode S1337 series For UV to IR, precision photometry Features Applications High UV sensitivity: QE 75% O=200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR


    Original     		S1337 S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR S1337-21 S1337-BR S13373 PDF

    S1337-16BR

    Abstract: S1337-1010BR S1337-66BR S1337 S1337-1010BQ S1337-16BQ S1337-33BQ S1337-33BR S1337-66BQ s1337-br
    Text: PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Low capacitance l Analytical equipment l Optical measurement equipment • General ratings / Absolute maximum ratings


    Original     		S1337 S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR SE-171 S1337-16BR S1337-1010BR S1337-66BR S1337-1010BQ S1337-16BQ S1337-33BQ S1337-33BR S1337-66BQ s1337-br PDF

    S1337-66BQ

    Abstract: S1337 S1337-1010BQ S1337-1010BR S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BR
    Text: PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Low capacitance l Analytical equipment l Optical measurement equipment • General ratings / Absolute maximum ratings


    Original     		S1337 S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR SE-171 S1337-66BQ S1337-1010BQ S1337-1010BR S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BR PDF

    Untitled

    Abstract: No abstract text available
    Text: Si photodiodes S1337 series For UV to IR, precision photometry Features Applications High UV sensitivity: QE 75% λ=200 nm Analytical equipment Low capacitance Optical measurement equipment Structure / Absolute maximum ratings Type No. S1337-16BQ S1337-16BR


    Original     		S1337 S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR S1337-21 PDF

    s1337-br

    Abstract: S1337-1010BR S1337 S1337-33BR S1337-66BQ S1337-1010BQ S1337-16BQ S1337-16BR S1337-33BQ S1337-66BR
    Text: PHOTODIODE Siフォトダイオード S1337シリーズ 紫外~赤外精密測光用フォトダイオード 特長 用途 l 高紫外感度: QE 75 % λ=200 nm l 低容量 l 分析機器 l 光計測機器など • 一般定格／絶対最大定格 型名


    Original     		S1337 S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR s1337-br S1337-1010BR S1337 S1337-33BR S1337-66BQ S1337-1010BQ S1337-16BQ S1337-16BR S1337-33BQ S1337-66BR PDF

    S1337-1010BQ

    Abstract: S1337-16BQ S1337-16BR S1337 S1337-1010BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR br mark
    Text: PHOTODIODE Si photodiode S1337 series For UV to IR, precision photometry Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Low capacitance l Analytical equipment l Optical measurement equipment • General ratings / Absolute maximum ratings


    Original     		S1337 S1337-16BQ S1337-16BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR S1337-1010BQ S1337-1010BR SE-171 S1337-1010BQ S1337-16BQ S1337-16BR S1337-1010BR S1337-33BQ S1337-33BR S1337-66BQ S1337-66BR br mark PDF

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA PDF

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118 PDF

    PD46

    Abstract: S1336-44BQ PD58 52387-1010r S1336-5BK S1087-03 S1336 S1337-1010BR PD-49 S2386-8K
    Text: — ‘ü V £ ti !n Bp 7C g qT • ± æ ^ B'j t# c— 11 À, ira / F«j ■& 5L hÏ üï S/jírim-ít T „PI V a­ typ i/is¡ Vh V ! Cr typ ip F Ï VR iV'i iv i 920 0.2 lk 65 5 -20-60 PD-46 0.01 920 0.2 lk 65 5 -20-60 P D '4 6 TO-5 0.01 920 0.5 lk 160


    OCR Scan     		S1336-5BQ PD-46 S1336-5BK S1336-44BQ S1336-8BQ PD-47 S1336-SBK PD46 S1336-44BQ PD58 52387-1010r S1336-5BK S1087-03 S1336 S1337-1010BR PD-49 S2386-8K PDF

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532 PDF

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode PDF

    S1337-1010BQ

    Abstract: S1337-33BQ
    Text: Si Photodiodes UV to IR Range, for Precision Photometry ! Dim ensional Type No. j . I . Actjve Effective O utline Package 1 ! Active (P.46 to 49)/; ;Area Size ] Afea W indow ! i M a te ria l-1 ; : (mm) ! (mm) ' I (mm2) Spectral Response Range X


    OCR Scan     		S1336 S1336-18BQ S1336-18BK S1336-5BQ S1336-5BK S1336-44BQ S1336-44BK S1336-8BQ S1336-8BK S1337-16BQ S1337-1010BQ S1337-33BQ PDF

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407 PDF

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE PDF

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Outline Package (P.40-47)/ Window Material (mm) Active Effective Spectral Area Size Active Response Area Range (mm) (mm2) (nm) Peak Sensitivity Wavelength /Ip (nm) Short Circuit


    OCR Scan     		S1336 S1336-18BQ 336-18BK S1336-5BQ S1336-44BK S1336-8BQ S1336-8BK 11tage KSPDB0061EA KSPDBQ052EB PDF

    S1337-33BR

    Abstract: s4160 S3407 S1227-66BQ S5107 8S02
    Text: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.


    OCR Scan     		S1226-18BQ S2386-18L S1190-01 KSPDA0047EA S1190-13 S1226 G1116, G1736 S2386 S1336 S1337-33BR s4160 S3407 S1227-66BQ S5107 8S02 PDF

    115 320 01

    Abstract: S1337-101OBR S1336-5BK 26EA
    Text: Silicon Photodiodes UV to IR Range, for Precision Photometry Type No. Dimensional Outline Package (P.38-42)/ Window Material* (mm) Active Area Size (mm) Effective Spectral Active Response Area Range (mm2) (nm) Peak Sensitivity Wavelength Xp Short Circuit


    OCR Scan     		200nm 633nm 930nm S1336 S1336-18BQ S1336-18BK S1336-5BÛ S1336-5BK S1336-44BQ S1336-44BK 115 320 01 S1337-101OBR 26EA PDF

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan     		0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840 PDF

    Untitled

    Abstract: No abstract text available
    Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


    OCR Scan     		0G03b S1223 660nm 780nm 830nm S1223-01 S3071 S1863-01 14mmTO-8 S3883 PDF