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    TE Connectivity 202D153-4-60/42-0-CS5077

    HEATSHRINK BOOT SZ53 BLACK
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    DigiKey 202D153-4-60/42-0-CS5077 Bulk 81 1
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    Mouser Electronics 202D153-4-60/42-0-CS5077 1
    • 1 $32.44
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    Fix Supply BULK-RS-NHS50-770

    High Strength Neoprene Rubber Sh
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    TE Connectivity 202D121-4-60/42-0-CS5077

    HEATSHRINK BOOT SZ21 BLACK
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    DigiKey 202D121-4-60/42-0-CS5077 Bulk 2 1
    • 1 $13.42
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    Littelfuse Inc DRS-50-77-83

    SWITCH REED SPST-NO 2.1A 280V
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    Littelfuse Inc DRS-50-77-88

    SWITCH REED SPST-NO 2.1A 280V
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    S5077 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiP21103 Vishay Siliconix New Product 250-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D Ultra Low Dropout—250 mV at 250-mA Load Ultra Low Noise—30 mVRMS 10-Hz to 100-kHz Shutdown Control 130-mA Ground Current at 250-mA Load


    Original     		PDF SiP21103 250-mA Dropout--250 Noise--30 10-Hz 100-kHz) 130-mA 400-mA

    mv silicon mp3 player

    Abstract: S5077
    Text: SiP21104 Vishay Siliconix New Product 250-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D D Ultra Low Dropout—250 mV at 250-mA Load Ultra Low Noise—30 mVRMS 10-Hz to 100-kHz Shutdown Control 130-mA Ground Current at 250-mA Load


    Original     		PDF SiP21104 250-mA Dropout--250 Noise--30 10-Hz 100-kHz) 130-mA 400-mA mv silicon mp3 player S5077

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    S2973-01

    Abstract: s6775 S2506-10
    Text: Si PIN Photodiodes 2 Dimensional Active Area Effective Active Type No. Outline Package (P.52, 53) Size Area (mm) (mm2) 2.4 X 2.8 6.6 S4707-01 S2973-01 © 1X 3 3 S5077 © 1.1 X 1.1 1.2 S3321 © <|>0.8 0.5 2x2 4 X Peak Sensitivity Wavelength A.p (nm) (nm)


    OCR Scan     		PDF S3321-04 S4707-01 S2973-01 S5077 S3321 S7329-01 S2506-02 S2506-04 S3321 S3321-C4 s6775 S2506-10

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 2 Dim ensional Active Area Effective Active Type No. O utline Package (P.51, 52) S4707-01 S2973-01 © S5077 © S3321 © Size (mm2) 2.4 X 2.8 6.6 1X 3 X 1.1 <>0.8 Peak Sensitivity Wavelength Xp Area (mm) 1.1 Spectral Response Range 3


    OCR Scan     		PDF S4707-01 S2973-01 S5077 S3321 S2506-02 S2506-04 S6786 S6775 S6775-01 S6967

    Untitled

    Abstract: No abstract text available
    Text: PIN Silicon Photodiodes 3 Active Area Effective Size Active Area (P.42, 43) (mm) (mm2) 2.77X2.77 7.7 Dimensional Type No. Outline Package S2506-02 S2506-04 S4707-01 © S5077 © S2973 © S3321 © Plastic mold 2.4X2.8 6.6 1.1X1.1 1.2 1X 3 3 ¿0.8 0.5 Peak


    OCR Scan     		PDF S2506-02 S2506-04 S4707-01 S5077 S2973 S3321 S5573 633nm 930nm KPINB0063EB

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 2 Dim ensional Type No. Active Area Effective Size Activo Arca (mm) (mm2) Package O utline (P.49,50) Peak Spectral Response Sensitivity W avelength Range Ap A (nm) Ap S2506-04 2 .7 7 X 2 .7 7 a t\ 7.7 0.37 960 800 to 1100 920 320 to 1060


    OCR Scan     		PDF S2506-04 S6786 S6036 S6036-01 S4707-01 S2973-01 S3321 S5573 S5052 S5077

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    S2973-01

    Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
    Text: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active


    OCR Scan     		PDF S5821 S5821-01 S5821-02 S5821-03 S5971 S5972 S5973 S5973-01 S5973-02 S5821 S2973-01 S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		PDF S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode

    Untitled

    Abstract: No abstract text available
    Text: K U H 71M1-7X U M « M39012/58— 3029 NOTES • 1. ■' r~ 1 .Ì2 3 M A X - MATING : Interface dimensions per Mil-C-39012/SMA Series and Solitron/Microwave MD-107. .OG>5 MATERIALS : Body & Press Ring:- •SHtZtklk TUBiWG -Stainless Steel per AMS-5640, Type 303, Cond. A.


    OCR Scan     		PDF 71M1-7X M39012/58â Mil-C-39012/SMA MD-107. AMS-5640, QQ-C-530, WW-T-799, Mil-P-19460 L-P-403, Mil-l-25053/4,

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		PDF G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01

    S1337-33BR

    Abstract: s4160 S3407 S1227-66BQ S5107 8S02
    Text: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.


    OCR Scan     		PDF S1226-18BQ S2386-18L S1190-01 KSPDA0047EA S1190-13 S1226 G1116, G1736 S2386 S1336 S1337-33BR s4160 S3407 S1227-66BQ S5107 8S02

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan     		PDF 0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840

    Untitled

    Abstract: No abstract text available
    Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


    OCR Scan     		PDF 0G03b S1223 660nm 780nm 830nm S1223-01 S3071 S1863-01 14mmTO-8 S3883

    Untitled

    Abstract: No abstract text available
    Text: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000


    OCR Scan     		PDF 00031a S1406-03 S1406-04 S1406-05 S1406-06 S5590 S5591 S3887 G1957 S1446,

    Untitled

    Abstract: No abstract text available
    Text: Si PIN Photodiodes 3 D im e n s io n a l Typ e No. O u tlin e Package (P .4 4 -4 6 ) R ange À W a v e le n g th H e -N e |G a A s L E D Laser 633nm 1 00 lx Typ. (n m ) (n m ) ¡ ] I E ffe ctive S p e c tra l R esponse S iz e A c tiv e A re a (m m ) (m m 2)


    OCR Scan     		PDF S2506-04 S4707-01 S5077 S2973 S6036 S5052 S3321 S5573 633nm 930nm

    QS113

    Abstract: S3590 S692
    Text: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. U nit: m m S2386-18L


    OCR Scan     		PDF S1226-18BQ, S2386-18L S5821-01, G1115 GT735 G1961 S1190 S2366-18K KPINAQ051EA KPINA0052EA QS113 S3590 S692