BU74HC32
Abstract: T-43-21 BU74HC32F T432 74HC 74LS BU74MC32
Text: ROHM 4QE D CO LTD • ?flEflcicn /Jlffl IC/Standard ICs BU74HC32 BU74HC32F D003ti2b 0 B R H H BU74HC32/BU74HC32F *7';' K2A*0R-y-h Quad 2'lnput 0R Ga,es 1-43-2.1 * • 0 /D im e n sio n s Unit: mm BU74HC32, BU74HC32F It, 2 A f t j E l n i l OR f f - h Uto
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D003ti2b
BU74HC32/BU74HC32F
BU74HC32
BU74MC32?
BU74HC32,
BU74HC32F
10LS-TTL
BUC74HC32
BU74HC32/BU74HC32F
T-43-21
T432
74HC
74LS
BU74MC32
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Untitled
Abstract: No abstract text available
Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077
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0003b2fi
633nm
930nm
S2506-04
S2973
S3321
S4707-01
S5573
KSPDA0061EA
KSPDA0062EA
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C2719
Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for
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S4282-11
S4285-40
S4810
KSPDA00060EA
S2833
S2833-01
KSPDA0061EA
KSPDA0062EA
D003t
G2711-01
C2719
S1190-01
s1223 pin photodiode
S4160 equivalent
s12271010b
S4753
S3407-01
hamamatsu S1336
S4160
G1118
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STGL 12
Abstract: ha 1452 1SS g STGL 52
Text: PF783-02 EPSON SEDI 570Doa Dot Matrix High Duty LCD Driver • 80 Output Segment Driver • Built-in Display RAM 80x200 bits • Self-refresh Function • DESCRIPTION T h e S E D 1 5 7 0 is an 80 output segm ent column driver with an internal display R AM . This drive is suitable for
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PF783-02
570Doa
80x200
33L4134
G-166
D003titi7
STGL 12
ha 1452
1SS g
STGL 52
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TP8V40FS
Abstract: No abstract text available
Text: |. p.;: t v y - Switching Power Transistor F S S ôH ôS Outline Dimensions 8a 2SC4834 NPN (TP8V40FS) A bsolute Maximum R atings « Item n S£ g m Symbol iS-if iS .S Storage Temperature Junction Temperature 3 V 9 9 • s<— X 3 I)± Collector to Base Voltage
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2SC4834
TP8V40FS)
00D3bM4
D003tiMS
TP8V40FS
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Untitled
Abstract: No abstract text available
Text: L8C2Q1/2Q2/2Q3/2Q4 L8C201/202/203/204 im 512/1K/2K/4K x 9-bit Asynchronous FIFO DEVICES INCORPORATED FEATURES_ _ □ First-In/First-Out FIFO using Dual-Port Memory □ Advanced CMOS Technology □ High Speed — to 10 ns Access Time □ Asynchronous and Simultaneous
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L8C201/202/203/204
512/1K/2K/4K
IDT720x,
KM75C0x
28-pin
32-pin
L8C201,
L8C202,
L8C203,
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working of 80286
Abstract: CA82C37A 80286 register organization B5061 CA82C37
Text: TUNDRA CA82C37A PROGRAMMABLE DMA CONTROLLER Pin and functional compatibility with the industry standard 8237/8237A Fully static, high speed - 10,8 and 5 MHz versions available Low power CMOS implementation TTL input/output compatibility Compatible with 8080/85,8086/88,80286/386 and
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CA82C37A
8237/8237A
CA82C37A
80C88
0003Tib
working of 80286
80286 register organization
B5061
CA82C37
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ECG941M
Abstract: ECG941D 9CTI ECG941 T179 456 kHz filter BB3T 3B74 ECG9410
Text: / PHILIPS E 17E C G INC J> b b S B T B û ECG941 ,ECG941 D, ECG941M INTERNALLY-COMPENSATED OPERATIONAL AMPLIFIER semiconductors Features: N o Frequency Compensation Required Short-C ircuit Protection Offset Volta ge N u ll C ap a b ility Large Com m on-M ode and Differential
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ECG941
ECG941
ECG941M
ECG9410
ECG941M
ECG941D
9CTI
T179
456 kHz filter
BB3T
3B74
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Untitled
Abstract: No abstract text available
Text: MOSEL VITELIC P R E LIM IN A R Y V53C16256H 2 5 6 K X 16 F A S T P A G E M O D E CM O S D YN A M IC R A M HIGH PERFORMANCE 40 45 50 60 40 ns 45 ns 50 ns 60 ns 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, tPC 23 ns 25 ns 28 ns 35 ns Min. Read/Write Cycle Time, (tRC)
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V53C16256H
110ns
V53C16256H
L3S3311
40-Pin
b353311
0003b0fl
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Untitled
Abstract: No abstract text available
Text: EPSON _ SED1530 Series Dot Matrix LCD Controller Driver • Ultra Low Power Consumption • Built-in Power Supply Circuit for LCD • 133 Driver Output • DESCRIPTION The SED 1530 series is a single-chip LCD driver for dot-m atrix liquid crystal displays LC D’s which is directly
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SED1530
SED1670)
SED1531
SED1670
SED1670D1A
SED1531
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Untitled
Abstract: No abstract text available
Text: FEATURES • • • • • • • • • • • • • 2 .3 " INCH 58.42m m M A T R IX HEIGHT. LOW POWER R EQ UIREM ENT. HIGH CONTRAST. HIGH BRIGHTNESS. SING LE PLANE, WIDE VIEW ING A N G LE . 5 x 7 A R R A Y W ITH X-Y SELECT. C O M PATIBLE W ITH USASCII A N D
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S5532
Abstract: No abstract text available
Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral
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S4280
S5531
S4752
S5533
S4753
S4751
S5532
KSPDA0061EA
KSPDA0062EA
D003t
S5532
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IMS T414
Abstract: inmos transputer T425 inmos T414 IMST425 T414 inmos transputer reference manual IMS T800 MARK RF01 T425 T800
Text: / / ,' ï ! I NMOS CORP IDE D I 4 ö 0 2 töfl OOOaSTl 3 I IM S T 425 transputer nnm os Advance Data FEATURES 30 MIPS peak 15 MIPS sustained performance 32 bit architecture IMS T800 & IMS T414-20 hardware/pin compatible 4 Kbytes on chip RAM for 120 Mbytes/sec data rate
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T414-20
T425-G17S
T425-G20S
T425-G25S
T425-G30S
T425-J17S
T425-J20S
T425-G17M
T425-G20M
IMS T414
inmos transputer T425
inmos T414
IMST425
T414
inmos transputer reference manual
IMS T800
MARK RF01
T425
T800
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R09864D
Abstract: R09864DS A12E
Text: _ MICROCHIP TECHNOLOGY INC 03 D -— GENERAL INSTRUMENT • _ _ _^ blG3201 OGOBiMO 4 ■ 7 ^ ^ ? R09B64B/CS/C/DS/D R09864AB/ACS/AC/ADS/AD 65,536 BIT STATIC READ ONLY MEMORY FEATURES» PIN CONFIGURATION 28 LEAD DU AL-IN-LINE
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R09B64B/CS/C/DS/D
R09864AB/ACS/AC/ADS/AD
blG3201
R09864A)
MIL-STD88Î
R09864
DS10005A-4
R09864D
R09864DS
A12E
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Untitled
Abstract: No abstract text available
Text: July 1994 PRELIMINARY Micro Linear ML4 6 1 0 R, ML4 6 11 R 5V, 2-, 4-Channel Thin-Film Read/Write Circuit GENERAL DESCRIPTION FEATURES The ML461 OR/4611R is a bipolar m onolithic read/write circuit designed for use with two-terminal thin-film recording heads. They provide a low noise read amplifier,
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ML461
OR/4611R
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Untitled
Abstract: No abstract text available
Text: REVISIONS DATE DESCRIPTION LTR APPROVED YR-HO-OA A Changes in accordance with NOR 5962-R231-93. 93-09-21 M. A. Frye B Updated boilerplate. Added device types 03-05. Removed programming requirements from drawing. TABLE I. changes. Editorial changes throughout.
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5962-R231-93.
MIL-BUL-103.
MIL-BUL-103
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S3407
Abstract: No abstract text available
Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity
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0DD31
1-43V
S1087
930nm
560nm
630nm
S4011
S4160
S4160-01
S1133
S3407
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S1190-01
Abstract: No abstract text available
Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800
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G003b24
S2839
S1190-01
S1190-13
S1190-03
S2840
S1190
S2216-01
633nm
930nm
S1190-01
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Goldstar TV diagram
Abstract: 76c88
Text: « tv GM76C88AL GoldStar 8,192 WORDS x 8 BIT GOLDSTAR ELECTRON CO, LTD. CMOS STATIC RAM Description The GM76C88AL is 65,536 bit static random acce ss memory organized as 8,192 words by 8 bits using CMOS technology and operated from a single 5V supply. Advanced Circuit techniques
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GM76C88AL
GM76C88AL
402A7S7
Goldstar TV diagram
76c88
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Untitled
Abstract: No abstract text available
Text: u n SMALL PACKAGE VOLTAGE REGULATOR « RQ5RW SERIES OUTLINE The RQ5RW Series are voltage regulator ICs with high accuracy output voltage and ultra-low supply current developed by CMOS process. Each of these ICs consists of a voltage reference unit, an error amplifier, resistors for setting output volt
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SC-82AB
RQ5RW40B
RQ5RW30B
RQ5RW50B
44bT0
0003T4S
00D3T4b
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S2840
Abstract: No abstract text available
Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.
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0003b5G
S2829
S4404-01
S2041
S2042
KSPDA0061EA
KSPDA0062EA
D003t
G2711-01
S2833-04,
S2840
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Untitled
Abstract: No abstract text available
Text: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc
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0G03b
S1223
660nm
780nm
830nm
S1223-01
S3071
S1863-01
14mmTO-8
S3883
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Untitled
Abstract: No abstract text available
Text: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000
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00031a
S1406-03
S1406-04
S1406-05
S1406-06
S5590
S5591
S3887
G1957
S1446,
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GFM 15A
Abstract: GTO thyristor GTO thyristor powerex 100A gate turn-off thyristor GDM21210 thyristor cp 04 95 thyristor TT 36 N GDM11210 powerex gate turn-off gto THYRISTOR GTO
Text: POQJEREX INC wuiBtex 1SE D m TEmhSI OQOHfc.b'l fi • GDM11210 GDM21210 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Gate Turn-Off (GTO) Thyristor Modules
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GDM11210
GDM21210
BP107,
Amperes/1200
GDM11210,
GDM21210
MAX/10
GFM 15A
GTO thyristor
GTO thyristor powerex
100A gate turn-off thyristor
thyristor cp 04 95
thyristor TT 36 N
powerex gate turn-off gto
THYRISTOR GTO
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