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    200NM Search Results

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    200NM Price and Stock

    EW Electronics SGC3S200NM

    CAP TRIMMER 5.5-20PF 100V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SGC3S200NM Reel 15,000 1,000
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    • 1000 $0.68728
    • 10000 $0.5713
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    SGC3S200NM Cut Tape 127 1
    • 1 $1.25
    • 10 $1.052
    • 100 $0.945
    • 1000 $0.7732
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    Prosperity Dielectrics Co Ltd FPS05FTF2200NM

    Triple power & anti surge,0805,1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FPS05FTF2200NM Reel 5,000 1
    • 1 $0.02
    • 10 $0.02
    • 100 $0.013
    • 1000 $0.011
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    MACOM MA4P1200NM-401T

    RF DIODE PIN 100V 1.5W AXIAL
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    DigiKey MA4P1200NM-401T Cut Tape 2,139 1
    • 1 $20.04
    • 10 $18.421
    • 100 $15.5575
    • 1000 $13.83952
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    MA4P1200NM-401T Reel 1,000 1,000
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    Mouser Electronics MA4P1200NM-401T 542
    • 1 $19.45
    • 10 $17.88
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    Pasternack Enterprises TC-200-NMH-X

    N Male Connector Crimp/Solder At
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    DigiKey TC-200-NMH-X 1,156 1
    • 1 $27.19
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    ebm-papst AC6200NM

    FAN AXIAL 172X51MM 85/265VAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AC6200NM Box 376 1
    • 1 $131.65
    • 10 $118.322
    • 100 $109.1558
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    Mouser Electronics AC6200NM 28
    • 1 $131.52
    • 10 $118.31
    • 100 $109.15
    • 1000 $109.15
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    Master Electronics AC6200NM 29
    • 1 $130.46
    • 10 $115.43
    • 100 $105.43
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    Sager AC6200NM 1
    • 1 $132.58
    • 10 $121.53
    • 100 $108.55
    • 1000 $108.55
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    200NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JEDEC B12-43

    Abstract: b1243 E678-12A Hamamatsu Photomultiplier Socket 12 Pin B12-43 DY10 R972 Hamamatsu Photomultiplier Socket 14 Pin
    Text: PHOTOMULTIPLIER TUBE R972 For VUV Detection, 19 mm 3/4 Inch Diameter, 10-stage, Head-On Type, Solar Blind Response (115 nm to 200nm) GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Useful Size Window Material


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    PDF 10-stage, 200nm) B12-43 E678-12A SE-171-41 TPMH1211E02 JEDEC B12-43 b1243 E678-12A Hamamatsu Photomultiplier Socket 12 Pin B12-43 DY10 R972 Hamamatsu Photomultiplier Socket 14 Pin

    UV diode 320 nm

    Abstract: uv photodiode PDU-G102B uv photodiode wavelength 250 to 260 320nm
    Text: UV Enhanced GaN Detectors PDU-G102B PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] QUARTZ WINDOW FILTER CAP WELDED Ø.118 [3.00] .055 [1.40] VIEWING ANGLE 61° CHIP ANODE 2X Ø.017 [0.43] .100 [2.54] .500 [12.70] Ø.181 [4.60] .112 [2.84] CATHODE CHIP DIMENSIONS INCH [mm]


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    PDF PDU-G102B 320nm PDU-G102B 200nm 350nm UV diode 320 nm uv photodiode uv photodiode wavelength 250 to 260

    R7600-M64

    Abstract: S10362-11-100C circuit diagram of a laser lighter
    Text: NEWS 02 2008 SOLID STATE PRODUCTS PAGE 9 New Si PIN photodiodes S10783 and S10784 SOLID STATE PRODUCTS Red LED for POF Data Communications PAGE 10 ELECTRON TUBE PRODUCTS 75W Xenon Lamp Series PAGE 28 SYSTEMS PRODUCTS Cooled CCD Camera ORCA-R2 PAGE 38 Highlights


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    PDF S10783 S10784 P2211 DE128228814 R7600-M64 S10362-11-100C circuit diagram of a laser lighter

    hamamatsu photomultiplier R300

    Abstract: 931A Hamamatsu Hamamatsu r300 6199 photomultiplier R300 pmt hamamatsu pmt R300 RCA 931-A Photomultiplier Tube Hamamatsu photomultiplier RCA 931A photomultiplier R928, hamamatsu
    Text: CHAPTER 1 INTRODUCTION 2007 HAMAMATSU PHOTONICS K. K. 2 1.1 CHAPTER 1 INTRODUCTION Overview of This Manual The following provides a brief description of each chapter in this technical manual. Chapter 1 Introduction Before starting to describe the main subjects, this chapter explains basic photometric units used to measure


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    Untitled

    Abstract: No abstract text available
    Text: LT1793 Low Noise, Picoampere Bias Current, JFET Input Op Amp FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1793 achieves a new standard of excellence in noise performance for a JFET op amp. For the first time low voltage noise 6nV/√Hz is simultaneously offered with


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    PDF LT1793 LT1793 LT1113 LT1792, LT1169 LT1793, LT1467 LT1792 1793f

    hamamatsu c1000

    Abstract: A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm
    Text: HIGH-SPEED GATED IMAGE INTENSIFIER UNITS C7244, C7245 Capturing still images of high-speed phenomena! C-mount adapter is optional. The Hamamatsu C7244 and C7245 are high-speed gated image intensifier units developed specifically for imaging of highspeed phenomena occurring at low light levels. These image intensifier units consist of an image intensifier head and its controller with a built-in high voltage power supply. The image intensifier head easily connects to the front of a CCD camera to configure a high-speed shutter camera that allows capturing still images of high-speed phenomena at any desired timing. The C7244


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    PDF C7244, C7245 C7244 C7245 C7244 S-164-40 TAPP1027E01 hamamatsu c1000 A2098 transistor a2098 A4869 A4539 C1000-12 image intensifier quantum efficiency data 40VA A3472-50 UV led 200nm

    VBK048

    Abstract: k 2674 S29AL004D spansion top marking TS048 TRAY AL004D
    Text: ���� ���� ���� ���� ����� ����� ����� ������ ������ ������ S29AL004D Floating Gate Flash Memory 4 Megabit 256 K x 16-Bit / 512 K x 8-Bit Spansion Overview


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    PDF S29AL004D 16-Bit ISO/TS16949 ISO9001 ISO14001 S29AL004D10BA1010 AL004D10BAI01. 1-866-SPANSION 3020A VBK048 k 2674 spansion top marking TS048 TRAY AL004D

    TS128MRMMC

    Abstract: No abstract text available
    Text: TS128MRMMC RS-MMC Description Features TS128MRMMC is a 128MB Reduced-Sized MultiMediaCard RS-MMC . It’s a highly integrated with flash memory, and is accessed via a dedicated serial interface optimized for fast and reliable data transmission. It is designed to provide an


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    PDF TS128MRMMC TS128MRMMC 128MB 128MB

    UV-005EQ

    Abstract: UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC
    Text: UV-EQ / EQC / EK SERIES new UV Enhanced, Suppressed NIR Photodiode OSI optoelectronics introduces new family of Planar Diffused UV Enhanced Photodiode: the UV–EQ and UV–EQC Series. The new Silicon is processed for enhanced responsivity over 200-400nm and sensitivity down to 190 nm.


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    PDF 200-400nm 320nm. UV-035DC UV-100DC UV-035DQC UV-100DQC XUV-50C XUV-100C XUV-005 XUV-020 UV-005EQ UV-035EQ spectrophotometer E152801 E14800 UV-001D UV-013EQ 320nm 100-EC UV-100EC

    Untitled

    Abstract: No abstract text available
    Text: This document has not been approved. Sharing this document with non-Spansion employees violates QS9000/TS16949 requirements. S29AL008D 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory Data Sheet DATASHEET Distinctive Characteristics


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    PDF QS9000/TS16949 S29AL008D 8-Bit/512 16-Bit) 200nm 230nm Am29LV160 S29AL008D

    Untitled

    Abstract: No abstract text available
    Text: S29AL008D 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the


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    PDF S29AL008D 8-Bit/512 16-Bit) s29al008d

    FIL-UV50

    Abstract: FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP
    Text: UV Enhanced Series Inversion Layers and Planar Diffused Silicon Photodiodes OSI Optoelectronics offers two distinct families of UV enhanced silicon photodiodes. Inversion channel series and planar diffused series. Both families of devices are especially designed for low noise detection in the


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    PDF diffuFIL-UV100 FIL-UV005 FIL-UV20 FIL-UV50 FIL-UV100 FIL-UV50 FIL-UV100 PIN-10D XUV-005 UV-100 UV-100L PIN-5D PIN-5DPI UV-035DQC PIN-10AP

    uv photodiode

    Abstract: PDU-G102B 320nm
    Text: UV Enhanced GaN Detectors PDU-G102B Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] Ø.210 [5.35] .055 [1.40] 2X Ø.017 [0.43] Ø .118 [3.00] CATHODE VIEWING ANGLE 61° ANODE .100 [2.54] .500 [12.70] Ø.181 [4.60] .087 [2.21] CHIP CHIP DIMENSIONS INCH [mm]


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    PDF PDU-G102B 320nm PDU-G102B 200nm 350nm uv photodiode

    Photocathode

    Abstract: image intensifier quantum efficiency data vidicon tube proximity sensor phosphor p20 Vidicon tube datasheet V3346U intensifier hamamatsu vidicon Photocathode S-25
    Text: 25mm DIA. PHOTOCATHODE PROXIMITY FOCUSED IMAGE INTENSIFIER V3346U High Image Quality, Wide Spectral Response, No Image Distortion For Scientific Applications FEATURES ● Compact and lightweight ● No image distortion ● High UV sensitivity . 60mA/W at 430nm


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    PDF V3346U 60mA/W 430nm S-164-40 1018E03 Photocathode image intensifier quantum efficiency data vidicon tube proximity sensor phosphor p20 Vidicon tube datasheet V3346U intensifier hamamatsu vidicon Photocathode S-25

    Electrophoretic Deposition Coating

    Abstract: Electrophoretic X5R 0603 activation energy ba 5996 ev 2816 ceramic capacitor footprint 0201 dimension INK JET DRIVER
    Text: Thin Film MLCC Michael Randall, Dan Skamser, Tony Kinard, Javaid Qazi, Aziz Tajuddin KEMET Electronics Corporation, 201 Fairview Street Extension, Fountain Inn, SC 29644 Phone: 864-409-5611, FAX: 864-409-5642 e-mail: mikerandall@kemet.com Susan Trolier-McKinstry, Clive Randall,


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    AS29LV016

    Abstract: No abstract text available
    Text: CO TS PEM COTS BOO T SECT OR FLASH BOOT SECTOR Austin Semiconductor, Inc. AS29LV016 16 Megabit 2M x 8-Bit / 1M x 16-Bit CMOS 3.0 Volt-Only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS PERFORMANCE CHARACTERISTICS „ Commercial Off The Shelf, up-screened device


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    PDF AS29LV016 16-Bit) 200nm AS29LV016

    1113fb

    Abstract: LT1113 LT1113ACN8 LT1113AMJ8 LT1113CN8 LT1113MJ8 servo accelerometer accelerometer b to22kHz IC OP AMP for Piezoelectric transducers
    Text: LT1113 Dual Low Noise, Precision, JFET Input Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1113 achieves a new standard of excellence in noise performance for a dual JFET op amp. The 4.5nV/√Hz 1kHz noise combined with low current noise and picoampere


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    PDF LT1113 LT1113 450pA LT1124 LT1169 LT1462 10000pF LT1464 1113fb LT1113ACN8 LT1113AMJ8 LT1113CN8 LT1113MJ8 servo accelerometer accelerometer b to22kHz IC OP AMP for Piezoelectric transducers

    amplify CV 203

    Abstract: S1336-5BK 1N914 2N3904 LT1097 LT1792 LT1793 LT1793ACN8 servo accelerometer accelerometer b
    Text: LT1793 Low Noise, Picoampere Bias Current, JFET Input Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1793 achieves a new standard of excellence in noise performance for a JFET op amp. For the first time low voltage noise 6nV/√Hz is simultaneously offered with


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    PDF LT1793 LT1793 LT1113 LT1792, LT1169 LT1793, LT1467 LT1792 1793f amplify CV 203 S1336-5BK 1N914 2N3904 LT1097 LT1792 LT1793ACN8 servo accelerometer accelerometer b

    S5226

    Abstract: 740nm S1227 10X10 S1226 S1336 S1337 S5226-8BQ S5227 S5227-1010BQ
    Text: HIGH STABILITY UV SILICON PHOTODIODES S5226, S5227 SERIES HAMAMATSU TECHNICAL DATA Low Capacitance, High Shunt Resistance and High Stability FEATURES • High UV s e n s itiv ity : 0.1 A/W A =200nm • • • • Low capacitance : 430P f } (S5226-8BQ, S5227-66BQ)


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    PDF S5226, S5227 200nm 430pF S5226-8BQ, S5227-66BQ) S1336, S1337 S1226 S1227 S5226 740nm 10X10 S1336 S5226-8BQ S5227-1010BQ

    VDI 3400

    Abstract: No abstract text available
    Text: SEDI 770/71 CMOS LCD DRIVE • DESCRIPTION The SED1770 and the SED1771 are an analog driver forthe active matrix LCD panel and MIM liquid crystal panel. The device outputs the same voltage level as an analog signal input. The SED1770/71 feature a wide range of LCD drive voltages. These drivers use a high speed daisy-chain enable


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    PDF SED1770 SED1771 SED1770/71 SED1743 160-output SED1770. SED1771 BG117 SEG118 VDI 3400

    ZE003

    Abstract: nfm4516p BLM21P221 A03X BLM31P121 Ultrasonic cleaner circuit diagram BLM31P391SG NFM4516 BLM21P331SG BLM41P102SG
    Text: BLM41A151S Page 1 o f 2 51 H0M E FF'roduct In fo rm a tio n j l Y e a r £00 0 F in a n c ia l I n f o m a t io n 1 A bout M u r a ta I C on tact ¡Search Engine ¡Catalog Library ¡Press Release ¡Design Support ¡Customer Support Home >Product Information >Search Engine >Catalog: BLM41A151S


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    PDF BLM41A151S 100MHz) 150ohm 200mA 50ohm NFM41P/46P, 40degree jp/image/A03X/EE0 ZE003 nfm4516p BLM21P221 A03X BLM31P121 Ultrasonic cleaner circuit diagram BLM31P391SG NFM4516 BLM21P331SG BLM41P102SG

    ze002

    Abstract: 8LM3 nfa3216 ze00203 BLM41P471 BLM31A700S BLM21P331S BLM41P750S BLM21P331SG blm murata p series
    Text: BLM31A700S Page 1 o f2 |Search Engine ¡Catalog Library |Press Release ¡Design Support ¡Customer Support Home >Product Infonnation >Search Engine >Catalog: BLM31A700S Noise Suppression Products/EMIFIL > EMIFIL SMD > Inductor Type Specification Details Part Number


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    PDF BLM31A700S 100MHz) 70ohm 200mA 15ohm NFM41P/46P, 40degree jp/image/A03X/EE0 ze002 8LM3 nfa3216 ze00203 BLM41P471 BLM31A700S BLM21P331S BLM41P750S BLM21P331SG blm murata p series

    NE531

    Abstract: NE5535 na741
    Text: Product specification Philips Semiconductors Linear Products High slew rate operational amplifier NE/SE531 PIN CONFIGURATIONS DESCRIPTION The 531 is a fast slewing high performance operational amplifier which retains DC performance equal to the best general purpose


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    PDF NE/SE531 NE531 NE5535 na741

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8