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    G1118 Search Results

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    REG1118-2.85/2K5 Texas Instruments Single Output LDO, 800mA, Fixed(2.85V), Current Source and Sink Capability 4-SOT-223 0 to 125 Visit Texas Instruments Buy
    REG1118-2.85/2K5G4 Texas Instruments Single Output LDO, 800mA, Fixed(2.85V), Current Source and Sink Capability 4-SOT-223 0 to 125 Visit Texas Instruments Buy
    REG1118-2.85 Texas Instruments Single Output LDO, 800mA, Fixed(2.85V), Current Source and Sink Capability 4-SOT-223 0 to 125 Visit Texas Instruments Buy
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    Texas Instruments REG1118-2.85

    IC REG LIN 2.85V 800MA SOT223-4
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    Fix Supply BULK-FG-11186

    Ring Metal Detectable FDA Silico
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    JRH Electronics G11188P6-TINNED

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    Texas Instruments REG1118-2.85-2K5

    IC REG LIN 2.85V 800MA SOT223-4
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    DigiKey REG1118-2.85-2K5 Reel 2,500
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    G1118 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G1118 Hamamatsu GaAsP photodiode Original PDF

    G1118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G1120

    Abstract: G1115 G1116 Hamamatsu G1118 G1117 G1118 G2711-01 G3067
    Text: PHOTODIODE GaAsPフォトダイオード 拡散型 可視域用フォトダイオード 特長 用途 l 低暗電流 l 高安定性 l 分析機器 l 色識別 • 一般定格／絶対最大定格 型名 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 外形


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G1120 G1115 G1116 Hamamatsu G1118 G1117 G1118 G2711-01 G3067

    Untitled

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPD1002E02

    G1120

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPD1002E02 G1120

    Untitled

    Abstract: No abstract text available
    Text: GaAsPフォトダイオード 拡散型 可視域用フォトダイオード 特長 用途 低暗電流 分析機器 高安定性 色識別 構成／絶対最大定格 型名 外形 寸法図/ 窓材* パッケージ 受光面 サイズ 有効 受光面積


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPDA0014JA KGPDA0002JA

    AM 5888

    Abstract: g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01
    Text: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01

    AM 5888

    Abstract: G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118
    Text: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118

    Untitled

    Abstract: No abstract text available
    Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


    OCR Scan     		PDF 0003b2fi 633nm 930nm S2506-04 S2973 S3321 S4707-01 S5573 KSPDA0061EA KSPDA0062EA

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Type No. Dim ensional Outline (P.44-50)/ W indow Material Package Active Area Size Effective Active Area - (mm). (mm2) Spectral Response Range A (nm) Photo Sensitivity S Typ. (A/W ) , Peak Sensitivity Wavelength Ap : (nm)


    OCR Scan     		PDF G1116 G1117 G1120 G1737 KGPDB0004EA G1118, G3067, G1735, G1738j KSPDB0007EA

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)


    OCR Scan     		PDF Isc100 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G5645 G5842

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types Dim ensional Outline (P.46 to 50V Package W indow Material *1 | T ype No. Active Area Size (mm) Area X Peak Sensitivity Wavelength Xp (mm2) (nm) (nm) Effective Spectral Response Range Photo Sensitivity S (A/W) Xp GaP LED


    OCR Scan     		PDF G1117 G1118 G1120 G2711-01 KGPDB0004 KGPDB0005EA KGPDB0007EA KGPDB0008EA

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		PDF S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Text: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF S1087. S1087-01 G1115 G1116 G1117 G1118 G1120 G1126-02. S6801-01 S6926. GaP photodiode APD uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


    OCR Scan     		PDF 0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787

    S3407

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


    OCR Scan     		PDF 0DD31 1-43V S1087 930nm 560nm 630nm S4011 S4160 S4160-01 S1133 S3407

    photodiode

    Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
    Text: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


    OCR Scan     		PDF G1115 G1116 G1117 G1118 G1120 G1126-02. S5107. S5139. S5343. S5344 photodiode schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE

    S1190-01

    Abstract: No abstract text available
    Text: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


    OCR Scan     		PDF G003b24 S2839 S1190-01 S1190-13 S1190-03 S2840 S1190 S2216-01 633nm 930nm S1190-01

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


    OCR Scan     		PDF 42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


    OCR Scan     		PDF Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan     		PDF 0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840