R758
Abstract: R636 R636-10 TPMSA0027EC R758-10
Text: PHOTOMULTlPLlER TUBES R636–10, R758–10 UV to Near IR R636–10:185 to 930 nm, R758–10:160 to 930nm Spectral Response 28mm(1-1/8 Inch) Diameter, GaAs(Cs) Photocathode, 9-stage,Side-On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response
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930nm)
S-164-40
TPMS1016E03
R758
R636
R636-10
TPMSA0027EC
R758-10
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TIES13A
Abstract: TIES13
Text: TIES13 TIES13A Gallium Arsenide Infrared-Emitting Diodes Select Products Here Go Designed to emit near-infrared radiant energy when forward biased FEATURES ● High output efficiency ● Hemispherically shaped chips with diameter of 36 mils ● Spectrally matched to silicon sensors . . . peak emission at 930nm
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TIES13
TIES13A
930nm
com/catalog/ties13
a/ties13
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pc123y22
Abstract: gp2d04 GP2D021 GP1A040R GP2D12 IS471FsE GP2Y0A02YK S2S4A00F GP2S24BC GP2Y0A21YK
Text: ES: Eric Sunderhaus, JD: Jeremy Dietz, RS: Robert Stuart PART NUMBER BS100C BS500B BS520 MKT INT JD JD JD PART DESCRIPTION / REPLACEMENT Blue Sens. PD Blue Sens. PD Blue Sens. PD Lead Free Part Number Lead Free Version of Replacement BS100C0F BS500B0F
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BS100C
BS500B
BS520
BS100C0F
BS500B0F
BS520E0F
GA102T1M1MZ
GA201TXR1ZZ
GA201TXR1ZY
pc123y22
gp2d04
GP2D021
GP1A040R
GP2D12
IS471FsE
GP2Y0A02YK
S2S4A00F
GP2S24BC
GP2Y0A21YK
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Untitled
Abstract: No abstract text available
Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package
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PS5042-2
800nm
930nm
200pcs
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Untitled
Abstract: No abstract text available
Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package
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PS5042-2
800nm
930nm
200pcs
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Untitled
Abstract: No abstract text available
Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・Lead–free soldering compatible
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PS5042-2
800nm
930nm
200pcs
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Untitled
Abstract: No abstract text available
Text: PS5042-2 Through-hole Phototransistor/Right Angle Type Features Package Product features Right Angle type, Black Visible Radiation Cut Filter epoxy ・Photo Current : 0.4mA TYP. VCE=5V,Ee=1mW/cm2 ・Visible Radiation Cut Filter under 800nm ・No lead package
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PS5042-2
800nm
930nm
200pcs
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ic741
Abstract: datasheet of ic741 Ic-741 IC741 datasheet 12c508 timer heart rate sensor digital frequency meter circuit diagram ic741 8 PIN light meter block diagram pin diagram of ic741
Text: Sensor Interface Light Meter Author: B. M. Dhananjaya Karnataka, India email: teekays@pentagon.com APPLICATION OPERATION To keep the circuit simple and small the internal 4MHz clock is used with satisfying accuracy. In case of very high accuracy measurements an external oscillator is
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delay200mS
dly200mS
200x1ms
200ms
loop200mS
DS40160A/3
015-page
ic741
datasheet of ic741
Ic-741
IC741 datasheet
12c508 timer
heart rate sensor
digital frequency meter circuit diagram
ic741 8 PIN
light meter block diagram
pin diagram of ic741
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Untitled
Abstract: No abstract text available
Text: OPTE K T E C H N O L O G Y I N C n 4âE D uaf — m „ b ? cifi5fl0 0 0 0 1 31 0 717 • OTK TM -51 Optek Standard Photodiodes OPC925 R = .4 S A/W 930nm C =10p F © 10V l0 = 3 0 n A 0 1 0 V A = 0 .6 6 m m 1 ANOOE .0 4 0 1 .0 2 .0 3 2 (0 .8 1 ) ACTIVE AR EA
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OPC925
930nm
OPC922
OPC929
OPC911
OPC915
OPC9013
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08D35
Abstract: OSD50-0 QD50-0 5902 LD20-0 LD35-0 MD100-0 MD25-0 QD100-0
Text: Series 0 General Purpose The Series 0 general purpose silicon photodiodes are designed to operate with a reverse bias voltage of up to 30 volts for applications where low capacitance or fast speed of response are important. These photodiodes are fabricated to maximize their responsivity in the 780-930nm range. The typical
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780-930nm
900nm
430nm
1064nm
LD20-0,
LD35-0,
MD25-0,
MD100-0
08D35
OSD50-0
QD50-0
5902
LD20-0
LD35-0
MD100-0
MD25-0
QD100-0
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Untitled
Abstract: No abstract text available
Text: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077
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0003b2fi
633nm
930nm
S2506-04
S2973
S3321
S4707-01
S5573
KSPDA0061EA
KSPDA0062EA
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hamamatsu S875
Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size
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560nm
633nm
930nm
S2386
S2386-18K
S1133-01,
S1133-11,
S1087-01,
G1118,
G1738
hamamatsu S875
S1190-01
S1188-02
S2387-16R
900nm LED
S2506
S1190 hamamatsu
S1721
S2216 02
Hamamatsu S1133
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OP535
Abstract: No abstract text available
Text: L7TfiSaO DDODbflB 1 57E D OPTEK TECHNOLOGY INC OPTEK Product Bulletin OP535 July 1989 Replaces January 1985 NPN Silicon Photodarlington Type OP535 • • • • Narrow receiving angle T-1 package style High current gain Small package size for space limited
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OP535
OP535
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Untitled
Abstract: No abstract text available
Text: niCROPAC INDUSTRIES INC 87019 42E D Di aQQ0fl3b b m PIPI INFRARED SECURE HERMETIC LED INDICATOR THi-te _ _ DESCRIPTION: These s o lid s ta te lam ps are h e rm e tic a lly sealed in TO-46 packages. They u tiliz e a u n iq ue in fra re d b lo c k in g lens to reduce
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62036-XX1
100pf
62036-XX2
62036-XX3
700nm
930nm.
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S1190 hamamatsu
Abstract: s1188 S1190-04 S2216-02 Q422 S2216 02 S1223-01 S1190-03 S-2216-02
Text: HAMAMATSU Pin CORP AT silicon Hnotoûioaes Q4229ßDJ9 HAMAMATSU CORP DE 89D Ò20Ò2 F eatures Window Materials S1188-02 U ltra-high speed response Q / K S1188-06 S 2216-01 U ltra-high speed response, low bias type Q /K S1190 High-speed response O'/K S 1 190-01
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Q4229
633nm
930nm
S1188-02
S1188-06
S2506-01
S2336
S2337
S1190 hamamatsu
s1188
S1190-04
S2216-02
Q422
S2216 02
S1223-01
S1190-03
S-2216-02
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Untitled
Abstract: No abstract text available
Text: niCROPAC INDUSTRIES INC 45E D WM bll3b40 aDQaa3b b 53 MPI DESCRIPTION: These solid state lamps are herm etically sealed in TO-46 packages. They utilize a unique infrared blocking lens to reduce unused energy in accordance w ith the requirem ents of the Army Statem ent of Work on Infrared Lighting. The red and yellow
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bll3b40
62036-XX1
100pf
62036-XX2
62036-XX3
700nm
930nm.
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Untitled
Abstract: No abstract text available
Text: High Power 980 nm Laser Model 1911A D S T A H T E A E T • High Power: he 1911A pump laser is a 980 nm laser device in a 14 90 mW to 120 mW pin butterfly package with a thermoelectric cooler and monitor photodiode. The laser is designed as a pump source • Reliable: <500 FITs
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109hours)
930nm
G1911A-A
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MI33H
Abstract: L11H 250nm MI-33H
Text: SILICON SENSORS INC 7S Ülf| 0353*123 GGOD3afl T | 8253922 SILICON SENSORS INC 75C 00328 T D SILICON PIN PHOTODIODES MI-33HL MI-33H #9.2* M l-11H # 5 . 4 ±et #4.81*6« #871*0 1 J*d± 1 r I 't*»-* T T% î JL »8 t r r r i# 4 ,a * « • B k o *81 TH “Tl.
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MI-33H
MI-33HL
l-11H
MI-11HL
MI-33HL
MI-11H
2856K
MUV-2537
900mV
MI33H
L11H
250nm
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S1722-01
Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR
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S1721
S1722
S1722-01
S1722-02
S1863
S1863-01
S1723-04
S1723-08
S1723-06
S1723-05
S-1721
G1117
si7202
S2164-01
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S2387
Abstract: No abstract text available
Text: Si Photodiodes Dimensional Outline Type No. Visible to IR Range, for Precision Photometry Active Package A rea Size ¡(P.40-44)/ Window Material* (mm) (mm) Effective Spectral Peak Active Response Sensitivity Wavelength A rea R ange Ap (m m 2) (nm ) (nm )
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633nm
930nm
S2386
S2387
1010R
S2387-101QR
S4036
S2386-8K
S2386-45K
S2386-5K,
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3365bq
Abstract: SI336
Text: Si Photodiodes Type No. iDimensional I Outline Package P.40-44 / Window Material* (mm) (UV to IR Range, for Precision Photometry) Active Effective Spectral Area Size Active Response Area Range Peak Sensitivity Wavelength Ap (mm2) (nm) (nm) (mm) Photo Sensitivity S (A/W)
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200nm
633nm
930nm
S1336
S133f,
44BK1OBR
S2551
1336-5BÛ
S1337-
3365bq
SI336
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Untitled
Abstract: No abstract text available
Text: PIN Silicon Photodiodes 3 Active Area Effective Size Active Area (P.42, 43) (mm) (mm2) 2.77X2.77 7.7 Dimensional Type No. Outline Package S2506-02 S2506-04 S4707-01 © S5077 © S2973 © S3321 © Plastic mold 2.4X2.8 6.6 1.1X1.1 1.2 1X 3 3 ¿0.8 0.5 Peak
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S2506-02
S2506-04
S4707-01
S5077
S2973
S3321
S5573
633nm
930nm
KPINB0063EB
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TEYD5500
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D ^ • filBOOlb 00067*16 1 ■ AL6G TEYD5500 T'Ji -¡T2 TfiUIFttilMGIIfil electronic C r t t t w Itchnotofltes I •_ Silicon Photo PIN Diode N-Type in clear plastic package for plastic fiber connection
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TEYD5500
930nm
r-Wi-53
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226e
Abstract: BC 227
Text: 0"i" bllicon nu r * ~J Dimensional Active Outline Type No. UV to Visible Range, for Precision Photometry, Suppressed IR Sensitivity nOtOOlOOGS P ackage A rea Size (P.38-40)/ Window Material* (mm) (mm) Photo Sensitivity S (A /W ) Peak Effective Spectral Active
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200nm
633nm
930nm
S1226
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
226e
BC 227
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