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    S12271 Price and Stock

    Banner Engineering Corp SM312DMS12-27146

    SM312DMS12-27146 MINIBEAM STRIPP
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    DigiKey SM312DMS12-27146 Box 1
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    Newark SM312DMS12-27146 Bulk 1
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    Banner Engineering Corp SM312CMS12-27199

    SM312CMS12-27199 MINI-BEAM STRIP
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    DigiKey SM312CMS12-27199 Box 1
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    Newark SM312CMS12-27199 Bulk 1
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    TT Electronics plc HM79S-125271LFTR13

    Power Inductors - SMD 270uH % SHIELDED DRUM SM IND
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    Mouser Electronics HM79S-125271LFTR13
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    Martin Sprocket & Gear Inc 78CS12 2 7/16

    Accu-Torch Sprocket, 78 Chain, 12 Teeth, 10.08" PD, 2 7/16" Finished Bore | Martin Sprocket & Gear 78CS12 2 7/16
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    RS 78CS12 2 7/16 Bulk 3 Weeks 1
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    Martin Sprocket & Gear Inc 82CS12 2 7/16

    Accu-Torch Sprocket, 82 Chain, 12 Teeth, 11.88" PD, 2 7/16" Finished Bore | Martin Sprocket & Gear 82CS12 2 7/16
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    RS 82CS12 2 7/16 Bulk 3 Weeks 1
    • 1 $768.72
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    S12271 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1227-1010BQ Hamamatsu Photonics Si photodiode Original PDF
    S1227-1010BQ Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1227-1010BR Hamamatsu Photonics Si photodiode Original PDF
    S1227-1010BR Unknown The Optical Devices Data Book (Japanese) Scan PDF
    S1227-16BQ Hamamatsu Photonics Si photodiode Original PDF
    S1227-16BR Hamamatsu Photonics Si photodiode Original PDF

    S12271 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power


    Original     		PDF S12271 KPIN1085E02

    Untitled

    Abstract: No abstract text available
    Text: Si PINフォトダイオード S12271 紫外～近赤外域用大面積高速PINフォトダイオード S12271は、φ4.1 mmという広い受光面サイズをもち、高速応答を実現したSi PINフォトダイオードです。受光窓に石英ガ


    Original     		PDF S12271 S12271ã KPINB0386JA KPINB0387JA KPINB0388JA KPINB0389JA KPINA0114JB KPIN1085J02

    Untitled

    Abstract: No abstract text available
    Text: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes


    Original     		PDF C9052 C9052-04 C9052-01 A9053) C9052-01/-02/-03 A9053-01) C9052-02 C9052-03 C9052-04 SE-171

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		PDF KSPD0001E09 near IR photodiodes S8745-01 S8558

    Untitled

    Abstract: No abstract text available
    Text: Siフォトダイオード 第 章 2 1 Siフォトダイオード 章 1-1 動作原理 1-2 等価回路 1-3 電流ー電圧特性 1-4 直線性 1-5 分光感度特性 1-6 ノイズ特性 1-7 感度均一性 1-8 応答速度 1-9 オペアンプとの接続


    Original     		PDF KPSDC0089JA

    7805 sot23

    Abstract: THERMISTORS SCK 055 oxygen sensor operational amp THERMISTORS SCK 053 Setra System 7805 sot-23 LTC1407A-1 LTC1408 LTC1867 LTC6244 so8
    Text: VOL 2 Industrial Signal Chain High Performance Analog ICs 04107_Industrial Signal Chain.r1.indd 1 10/21/08 3:34:45 PM Industrial systems demand semiconductors that are precise, flexible and reliable. Linear Technology offers a broad line of high performance


    Original     		PDF 1-800-4-LINEAR LW100815KU 7805 sot23 THERMISTORS SCK 055 oxygen sensor operational amp THERMISTORS SCK 053 Setra System 7805 sot-23 LTC1407A-1 LTC1408 LTC1867 LTC6244 so8

    city 4OX

    Abstract: 636 1.5uF 8000 7805 so8 81216AD LTC1407A-1 DFN-38 7805 SOT-23 setra LTC6910-1 LT1637
    Text: VOL 2 インダストリアル・シグナルチェーン 高性能アナログ IC 産業用システムには高精度で柔軟性、信頼性の高い半導体デバイス が必要です。リニアテクノロジーは幅広いラインナップの高性能アナ


    Original     		PDF ADCp10 ADCp11 ADCp12 ADCp16 RMS-DCp19 CMRR110dB LT1004-1 LT1637 TP0610 city 4OX 636 1.5uF 8000 7805 so8 81216AD LTC1407A-1 DFN-38 7805 SOT-23 setra LTC6910-1 LT1637

    S1227

    Abstract: S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR s12271010bq
    Text: PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc.


    Original     		PDF S1227 S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR S1227-1010BQ S1227-1010BR SE-171 S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR s12271010bq

    1010BQ

    Abstract: S1227 S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR
    Text: PHOTODIODE Si photodiode S1227 series For UV to visible, precision photometry; suppressed IR sensitivity Features Applications l High UV sensitivity: QE 75 % λ=200 nm l Suppressed IR sensitivity l Low dark current l Analytical equipment l Optical measurement equipment, etc.


    Original     		PDF S1227 S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR S1227-1010BQ S1227-1010BR SE-171 1010BQ S1227-1010BQ S1227-1010BR S1227-16BQ S1227-16BR S1227-33BQ S1227-33BR S1227-66BQ S1227-66BR

    LT6242 Diode

    Abstract: LT6242 LT6241 LTCGF bf862 photodiode jfet folded cascode jfet cascode S1227-1010BQ folded cascode second stage LTC6244
    Text: LTC6244 Dual 50MHz, Low Noise, Rail-to-Rail, CMOS Op Amp U FEATURES DESCRIPTIO • The LTC 6244 is a dual high speed, unity-gain stable CMOS op amp that features a 50MHz gain bandwidth, 40V/µs slew rate, 1pA of input bias current, low input capacitance and


    Original     		PDF LTC6244 50MHz, 50MHz 12nV/Hz. LTC1151 LT1792 LTC2050 OT-23 LTC2051/LTC2052 LTC2050 LT6242 Diode LT6242 LT6241 LTCGF bf862 photodiode jfet folded cascode jfet cascode S1227-1010BQ folded cascode second stage LTC6244

    ups PURE SINE WAVE schematic diagram

    Abstract: BF862 spice model 24V lead acid smart battery charger using pic schematic diagram for offline UPS free laptop Lithium-ion battery diagram schematic PIC lead acid battery charger 1010BQ 3 phase ups PURE SINE WAVE schematic diagram PKGS MURATA cell phone detector conclusion
    Text: LINEAR TECHNOLOGY DECEMBER 2005 IN THIS ISSUE… COVER ARTICLE A Better Way to Push Your Buttons.1 Victor Fleury Issue Highlights .2 Linear Technology in the News….2 DESIGN FEATURES Fast CMOS Op Amp Challenges


    Original     		PDF 16-Bit I-20156 SE-164 ups PURE SINE WAVE schematic diagram BF862 spice model 24V lead acid smart battery charger using pic schematic diagram for offline UPS free laptop Lithium-ion battery diagram schematic PIC lead acid battery charger 1010BQ 3 phase ups PURE SINE WAVE schematic diagram PKGS MURATA cell phone detector conclusion

    S8558

    Abstract: No abstract text available
    Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4102DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4102DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    CRHV2512AF1007G

    Abstract: jfet folded cascode piezoelectric shock sensor folded cascode op amp PKGS MURATA bf862 photodiode PKGS-00LD PKGS-00 GN16 LTC6241
    Text: DESIGN FEATURES Fast CMOS Op Amp Challenges Bipolar Amps on All Key Specs by John Wright and Glen Brisebois Introduction The LTC6241 dual and LTC6242 quad CMOS op amps compete headon with bipolar op amps in noise, speed, offset voltage, and offset drift, while maintaining superior low input


    Original     		PDF LTC6241 LTC6242 3000pF! 220kHz 10kHz 221nV/Hz, 100kHz, 10kHz/DIV CRHV2512AF1007G jfet folded cascode piezoelectric shock sensor folded cascode op amp PKGS MURATA bf862 photodiode PKGS-00LD PKGS-00 GN16

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


    OCR Scan     		PDF S4282-11 S4285-40 S4810 KSPDA00060EA S2833 S2833-01 KSPDA0061EA KSPDA0062EA D003t G2711-01 C2719 S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118

    j633

    Abstract: SIS10
    Text: C i D h n + r k f t i r k r i â o P to Visible Range, 1 O l r n O l O U l O O C S \for Precision Photometry, Suppressed IR Sensitivity, Type No. Dimensional: Ac jve Effective Outline ! package Active (P.46 to 49 /; Area Size • Window i Material ’ (m m )


    OCR Scan     		PDF S1226 S1226-18BQ S1226-18BK S1226-5BQ S1226-5BK S1226-44BQ S1226-44BK S1226-8BQ S1226-8BK KSPOB0023EA j633 SIS10

    S1227-1010BQ

    Abstract: KPDB0001EA KPDC0006EA
    Text: Characteristics and Use of Photodiodes • INTRODUCTION Photodiodes a re semiconductor light sensors that generate a current or voltage w hen the P -N junction in the sem iconductor is illuminated by light. T h e term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to detect the intensity of


    OCR Scan     		PDF KP060016EA S1227-1010BQ KPDB0001EA KPDC0006EA

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    Untitled

    Abstract: No abstract text available
    Text: Q i D b / v t/ trf ir t r ia e Ol rnoioaioaes Dimensional Type No. í ’Ó É in í* Package P.44-46 / Window Material'*(mm) i UV t0 V's 'kle Range, \for Precision Photometry, Suppressed IR Sensitivity Active Response Aro-T Range Peak Sensitivity Wavelength


    OCR Scan     		PDF S1226 S1226-18BQ S1226-18BK S1226-5BQ S1226-5BK S1227-66BR S1227-1010BQ S1227-66BQ S1227-1010BR KSPOB0028EA

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01

    S3407

    Abstract: S4036 S5533
    Text: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan     		PDF S1226-18BQ, S2386-18L S1190-01, S1190-13 S2216-01, S5531, S5532, S5533 S2381, S2382, S3407 S4036 S5533

    S5532

    Abstract: No abstract text available
    Text: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


    OCR Scan     		PDF S4280 S5531 S4752 S5533 S4753 S4751 S5532 KSPDA0061EA KSPDA0062EA D003t S5532