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Vishay Siliconix SI4102DY-T1-E3 MOSFET N-CH 100V 3.8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4102DY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.36755	Buy Now
Vishay Siliconix SI4102DY-T1-GE3 MOSFET N-CH 100V 3.8A 8SO
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DigiKey ()	SI4102DY-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4102DY-T1-GE3	Digi-Reel			1	1 $0.97 10 $0.97 100 $0.97 1000 $0.97 10000 $0.97	Buy Now
	SI4102DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4102DYT1E3 N-CHANNEL 100-V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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ComSIT USA	SI4102DYT1E3		6,954			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4102DYT1GE3 N-CHANNEL 100-V (D-S) MOSFET Small Signal Field-Effect Transistor, 0.0027A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4102DYT1GE3		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4102DY-T1-GE3 Trans MOSFET NCH 100V 27A 8Pin SOIC N TR (Alt: SI4102DY-T1-GE3)
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EBV Elektronik	SI4102DY-T1-GE3			143 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI4102DY Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4102DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC		Original	PDF
SI4102DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.8A 8-SOIC		Original	PDF

SI4102DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SI-4102 Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 11-Mar-11 SI-4102	PDF
Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SPICE Device Model Si4102DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4102DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS	Original	Si4102DY Si4102DY-T1-E3 18-Jul-08	PDF
SI-4102 Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI-4102	PDF
SI-4102 Abstract: AN609 Si4102DY 69297 Contextual Info: Si4102DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4102DY AN609 13-Aug-07 SI-4102 69297	PDF
Si4102DY-T1-E3 Abstract: SI-4102 si4102 Si4102DY RG370 Contextual Info: New Product Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d rDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • TrenchFET Power MOSFET • 100 % UIS Tested Qg (Typ) RoHS 4.6 nC APPLICATIONS	Original	Si4102DY Si4102DY-T1-E3 08-Apr-05 SI-4102 si4102 RG370	PDF
SI-4102 Abstract: Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 DSA0038151 Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 18-Jul-08 SI-4102 DSA0038151	PDF
SI-4102 Abstract: Si4102DY SI4102 Contextual Info: SPICE Device Model Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4102DY 18-Jul-08 SI-4102 SI4102	PDF
Contextual Info: Si4102DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 d • TrenchFET Power MOSFET • 100 % UIS Tested • Material categorization: For definitions of compliance please see	Original	Si4102DY Si4102DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si4102DY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)d RDS(on) (Ω) 100 0.158 at VGS = 10 V 3.8 0.175 at VGS = 6 V 3.6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % UIS Tested	Original	Si4102DY Si4102DY-T1-E3 Si4102DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF