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    S1123 Search Results

    S1123 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    PMCS1123A1QDVGR Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    TMCS1123A1AQDVGR Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    TMCS1123C1AQDVGR Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    PMCS1123A2QDVGR Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    TMCS1123A2AQDVGR Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
    TMCS1123C2AQDVGR Texas Instruments ±1300V reinforced isolation, 80Arms 250kHz Hall-effect current sensor with AFR, reference and ALERT 10-SOIC -40 to 125 Visit Texas Instruments
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    S1123 Price and Stock

    Texas Instruments TMCS1123A5AQDVGR

    1100V REINFORCED ISOLATION, 75AR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1123A5AQDVGR Cut Tape 1,936 1
    • 1 $6.06
    • 10 $4.543
    • 100 $3.7351
    • 1000 $2.92754
    • 10000 $2.92754
    		Buy Now
    Mouser Electronics TMCS1123A5AQDVGR
    • 1 $6.05
    • 10 $4.54
    • 100 $3.69
    • 1000 $2.89
    • 10000 $2.79
    		Get Quote

    Texas Instruments TMCS1123A3AQDVGR

    1100V REINFORCED ISOLATION, 75AR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1123A3AQDVGR Cut Tape 1,902 1
    • 1 $6.06
    • 10 $4.543
    • 100 $3.7351
    • 1000 $2.92754
    • 10000 $2.92754
    		Buy Now

    Texas Instruments TMCS1123A2AQDVGR

    1100V REINFORCED ISOLATION, 75AR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1123A2AQDVGR Cut Tape 1,827 1
    • 1 $6.06
    • 10 $4.543
    • 100 $3.7351
    • 1000 $2.92754
    • 10000 $2.92754
    		Buy Now
    Mouser Electronics TMCS1123A2AQDVGR
    • 1 $6.05
    • 10 $4.54
    • 100 $3.69
    • 1000 $2.89
    • 10000 $2.79
    		Get Quote

    Texas Instruments TMCS1123C5AQDVGR

    1100V REINFORCED ISOLATION, 75AR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1123C5AQDVGR Cut Tape 1,797 1
    • 1 $6.06
    • 10 $4.543
    • 100 $3.7351
    • 1000 $2.92754
    • 10000 $2.92754
    		Buy Now
    Mouser Electronics TMCS1123C5AQDVGR
    • 1 $6.06
    • 10 $4.55
    • 100 $3.7
    • 1000 $3.11
    • 10000 $2.63
    		Get Quote

    Texas Instruments TMCS1123A1AQDVGR

    1100V REINFORCED ISOLATION, 75AR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TMCS1123A1AQDVGR Cut Tape 1,717 1
    • 1 $6.06
    • 10 $4.543
    • 100 $3.7351
    • 1000 $2.92754
    • 10000 $2.92754
    		Buy Now
    Mouser Electronics TMCS1123A1AQDVGR 1,604
    • 1 $6.06
    • 10 $4.55
    • 100 $3.7
    • 1000 $3.11
    • 10000 $2.63
    		Buy Now
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    S1123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si1922

    Abstract: SI1922EDH
    Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1922EDH 2002/95/EC OT-363 SC-70 Si1922EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1922

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3453DV 11-Mar-11

    sir882a

    Abstract: No abstract text available
    Text: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR882ADP 11-Mar-11 sir882a

    Untitled

    Abstract: No abstract text available
    Text: SUM09N20-270 Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.270 at VGS = 10 V 9 0.300 at VGS = 6 V 8.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package


    Original     		PDF SUM09N20-270 2002/95/EC O-263 SUM09N20-270-E3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQM120N08-05 www.vishay.com Vishay Siliconix Automotive N-Channel 75 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 75 RDS(on) () at VGS = 10 V 0.0048 ID (A) • TrenchFET Power MOSFET 120


    Original     		PDF SQM120N08-05 AEC-Q101 O-263 2002/95/EC SQM120N08-05-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		PDF SiZ730DT 2002/95/EC SiZ730DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    234B

    Abstract: No abstract text available
    Text: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V


    Original     		PDF SiZ790DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 234B

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0072 at VGS = 10 V 24a 0.0092 at VGS = 4.5 V 24a 0.0039 at VGS = 10 V 28a 0.0047 at VGS = 4.5 V a 28 Qg (Typ.)


    Original     		PDF SiZ900DT 2002/95/EC SiZ900DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ904DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () Max. ID (A) 0.024 at VGS = 10 V 0.030 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.017 at VGS = 4.5 V 12a 12a 16a 16a


    Original     		PDF SiZ904DT 2002/95/EC SiZ904DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)


    Original     		PDF SQ2308BES AEC-Q101 O-236 OT-23) 2002/95/EC OT-23 SQ2308BES-T1-GE3 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: SUM23N15-73 Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () ID (A) 0.073 at VGS = 10 V 23 0.077 at VGS = 6 V 22.5 • • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature Low Thermal Resistance Package


    Original     		PDF SUM23N15-73 2002/95/EC O-263 SUM23N15-73-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode s1 77

    Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
    Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28


    Original     		PDF S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128

    Untitled

    Abstract: No abstract text available
    Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC


    Original     		PDF SiZ710DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.)


    Original     		PDF SiZ700DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		PDF SiZ730DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Pb containing terminations are not RoHS compliant, exemptions


    Original     		PDF SiHF12N60E 2002/95/EC O-220 11-Mar-11

    0220S

    Abstract: No abstract text available
    Text: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)


    Original     		PDF SQ2308BES O-236 OT-23) AEC-Q101 2002/95/EC OT-23 SQ2308BES-T1-GE3 11-Mar-11 0220S

    SI1902CDL

    Abstract: marking code pe "Switching diode" 6pin
    Text: New Product Si1902CDL Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.235 at VGS = 4.5 V 1.1 0.306 at VGS = 2.5 V 1 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1902CDL 2002/95/EC OT-363 SC-70 Si1902CDL-T1-GE3 11-Mar-11 marking code pe "Switching diode" 6pin

    Untitled

    Abstract: No abstract text available
    Text: SQJ884EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SQJ884EP AEC-Q101 2002/95/EC SQJ884EP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.28 Qg max. (nC)


    Original     		PDF SiHB15N60E 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.38 Qg max. (nC)


    Original     		PDF SiHB12N60E 2002/95/EC 11-Mar-11

    SQ2308BES-T1-GE3

    Abstract: SQ2308BES
    Text: SQ2308BES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V)


    Original     		PDF SQ2308BES O-236 OT-23) AEC-Q101 2002/95/EC OT-23 SQ2308BES-T1-GE3 2011/65/EU 2002/95/EC. SQ2308BES-T1-GE3 SQ2308BES

    Untitled

    Abstract: No abstract text available
    Text: SQA410EJ www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualified d • 100 % Rg and UIS Tested


    Original     		PDF SQA410EJ AEC-Q101 2002/95/EC SC-70-6L-Single SQA410EJ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A