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    SIZ710DT Price and Stock

    Vishay Siliconix SIZ710DT-T1-GE3

    MOSFET 2N-CH 20V 16A 6PWRPAIR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIZ710DT-T1-GE3 Cut Tape 10,342 1
    • 1 $1.43
    • 10 $1.173
    • 100 $0.912
    • 1000 $0.62974
    • 10000 $0.62974
    		Buy Now
    SIZ710DT-T1-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.53853
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    SIZ710DT-T1-GE3 Digi-Reel 1
    • 1 $1.43
    • 10 $1.173
    • 100 $0.912
    • 1000 $0.62974
    • 10000 $0.62974
    		Buy Now

    Vishay Intertechnologies SIZ710DT-T1-GE3

    Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIZ710DT-T1-GE3 Reel 16 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.7138
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    Mouser Electronics SIZ710DT-T1-GE3 3,609
    • 1 $1.16
    • 10 $0.978
    • 100 $0.799
    • 1000 $0.604
    • 10000 $0.538
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    Bristol Electronics SIZ710DT-T1-GE3 889
    • 1 -
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    TTI SIZ710DT-T1-GE3 Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.538
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    TME SIZ710DT-T1-GE3 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.85
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    New Advantage Corporation SIZ710DT-T1-GE3 4,337 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.3
    • 10000 $1.21
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    SIZ710DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIZ710DT-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 16A POWERPAIR Original PDF

    SIZ710DT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiZ710DT 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC


    Original     		PDF SiZ710DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC


    Original     		PDF SiZ710DT 2002/95/EC SiZ710DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    transistor 6822

    Abstract: 6822 mosfet 4800 transistors 6822 6822 transistor 731 MOSFET 4800 mosfet AN609 38734
    Text: SiZ710DT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiZ710DT AN609, 25-Feb-10 transistor 6822 6822 mosfet 4800 transistors 6822 6822 transistor 731 MOSFET 4800 mosfet AN609 38734

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.009 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a 6.9 nC 18.2 nC


    Original     		PDF SiZ710DT 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC


    Original     		PDF SiZ710DT 2002/95/EC SiZ710DT-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC


    Original     		PDF SiZ710DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    CH1290

    Abstract: 04-Oct-10
    Text: New Product SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.009 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a 6.9 nC 18.2 nC


    Original     		PDF SiZ710DT 18-Jul-08 CH1290 04-Oct-10

    Full Material

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, Military, and Space) ミリタリー宇宙） AMS（航空、 衛星/GPS 4


    Original     		PDF SiZ710DT Top-10 SiR662DP CNY64ST CNY65ST IWAS-4832FF-50 VLMx1300 VMN-MS6792-1304-AMS Full Material

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in


    Original     		PDF SiZ340DT SiZ342DT VMN-MS6927-1406

    sir158

    Abstract: q113 SiZ340DT SiR158DP N3X3
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS


    Original     		PDF SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, AMS (Avionics, Military, and Space) Military, and Space) Satellites/GPS 4


    Original     		PDF SiZ710DT Top-10 SiR662DP CNY64ST CNY65ST IWAS-4832FF-50 VLMx1300 VMN-MS6761-1212

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one


    Original     		PDF SiZ790DT SiZ914DT VMN-PT0182-1402