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    SIHB12N60E Price and Stock

    Vishay Siliconix SIHB12N60E-GE3

    MOSFET N-CH 600V 12A D2PAK
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    DigiKey SIHB12N60E-GE3 Bulk 1,000
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    Vishay Siliconix SIHB12N60ET5-GE3

    MOSFET N-CH 600V 12A TO263
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    DigiKey SIHB12N60ET5-GE3 Bulk 800
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    Vishay Siliconix SIHB12N60ET1-GE3

    MOSFET N-CH 600V 12A TO263
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    DigiKey SIHB12N60ET1-GE3 Bulk 800
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    Vishay Intertechnologies SIHB12N60ET1-GE3

    N-CHANNEL 600V - Bulk (Alt: SIHB12N60ET1-GE3)
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    Avnet Americas SIHB12N60ET1-GE3 Bulk 13 Weeks 800
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    Mouser Electronics SIHB12N60ET1-GE3
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    TTI SIHB12N60ET1-GE3 Reel 800
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    TME SIHB12N60ET1-GE3 1
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    EBV Elektronik SIHB12N60ET1-GE3 14 Weeks 800
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    Vishay Intertechnologies SIHB12N60ET5-GE3

    N-CHANNEL 600V - Bulk (Alt: SIHB12N60ET5-GE3)
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    Avnet Americas SIHB12N60ET5-GE3 Bulk 13 Weeks 800
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    Mouser Electronics SIHB12N60ET5-GE3
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    TTI SIHB12N60ET5-GE3 Reel 800
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    EBV Elektronik SIHB12N60ET5-GE3 14 Weeks 800
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    Find more SIHB12N60E price and stock on Findchips.com

    SIHB12N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB12N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO263 Original PDF

    SIHB12N60E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.38 Qg max. (nC)


    Original     		PDF SiHB12N60E 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration


    Original     		PDF SiHB12N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHB12N60E

    Abstract: s1206
    Text: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.38 58 Qgs (nC) 6 Qgd (nC) 13


    Original     		PDF SiHB12N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s1206

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.38 58 Qgs (nC) 6 Qgd (nC) 13


    Original     		PDF SiHB12N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.38 58 Qgs (nC) 6 Qgd (nC) 13


    Original     		PDF SiHB12N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB12N60E AN609, 4911m 4077m 2911m 3123m 15-Jan-15

    Untitled

    Abstract: No abstract text available
    Text: SiHB12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.38 58 Qgs (nC) 6 Qgd (nC) 13


    Original     		PDF SiHB12N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836