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    SIHF22N60E Search Results

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    SIHF22N60E Price and Stock

    Vishay Siliconix SIHF22N60E-GE3

    MOSFET N-CH 600V 21A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF22N60E-GE3 Tube 947 1
    • 1 $4.61
    • 10 $4.61
    • 100 $4.61
    • 1000 $1.8125
    • 10000 $1.8125
    		Buy Now

    Vishay Siliconix SIHF22N60E-E3

    MOSFET N-CH 600V 21A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF22N60E-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.61812
    • 10000 $1.61812
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    Vishay Intertechnologies SIHF22N60E-GE3

    N-CHANNEL 600V - Bulk (Alt: 19X1936)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF22N60E-GE3 Bulk 8 Weeks, 4 Days 1
    • 1 $3.08
    • 10 $2.8
    • 100 $2.21
    • 1000 $2.21
    • 10000 $2.21
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    SIHF22N60E-GE3 Reel 18 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.77914
    • 10000 $1.77914
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    Mouser Electronics SIHF22N60E-GE3 1,381
    • 1 $2.73
    • 10 $2.73
    • 100 $1.86
    • 1000 $1.81
    • 10000 $1.81
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    Newark SIHF22N60E-GE3 Bulk 114 1
    • 1 $2.35
    • 10 $2.17
    • 100 $2.17
    • 1000 $2.17
    • 10000 $2.17
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    TTI SIHF22N60E-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85
    • 10000 $1.81
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    TME SIHF22N60E-GE3 1
    • 1 $4.04
    • 10 $3.64
    • 100 $2.89
    • 1000 $2.7
    • 10000 $2.7
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    Avnet Asia SIHF22N60E-GE3 20 Weeks 1,000
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    EBV Elektronik SIHF22N60E-GE3 19 Weeks 50
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    Vishay Intertechnologies SIHF22N60E-E3

    N-CHANNEL 600V - Rail/Tube (Alt: SIHF22N60E-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF22N60E-E3 Tube 18 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.6878
    • 10000 $1.6878
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    Mouser Electronics SIHF22N60E-E3
    • 1 -
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    TTI SIHF22N60E-E3 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.74
    • 10000 $1.74
    		Buy Now
    EBV Elektronik SIHF22N60E-E3 19 Weeks 50
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    Vishay Siliconix SIHF22N60EGE3

    POWER MOSFET Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHF22N60EGE3 1,000
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    Find more SIHF22N60E price and stock on Findchips.com

    SIHF22N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 Original PDF
    SIHF22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220 Original PDF

    SIHF22N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D


    Original     		PDF SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHF22N60E

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF22N60E AN609, 2985m 2220m 4617m 0477m 0778m 9408m 20-Jun-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D APPLICATIONS


    Original     		PDF SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihf22n60

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11 sihf22n60

    SIHF22N60E-GE3

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHF22N60E-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836