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    SIHF12N60E Search Results

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    SIHF12N60E Price and Stock

    Vishay Siliconix SIHF12N60E-GE3

    MOSFET N-CH 600V 12A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF12N60E-GE3 Tube 703 1
    • 1 $2.71
    • 10 $2.252
    • 100 $2.71
    • 1000 $1.28674
    • 10000 $1.17645
    		Buy Now

    Vishay Siliconix SIHF12N60E-E3

    MOSFET N-CH 600V 12A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF12N60E-E3 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.20484
    • 10000 $1.20484
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    Bristol Electronics SIHF12N60E-E3 1,460
    • 1 -
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    Vishay Intertechnologies SIHF12N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHF12N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF12N60E-GE3 Reel 13 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.2319
    • 10000 $1.2319
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    Mouser Electronics SIHF12N60E-GE3 3,598
    • 1 $2.71
    • 10 $2.26
    • 100 $1.8
    • 1000 $1.32
    • 10000 $1.3
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    Newark SIHF12N60E-GE3 Bulk 1
    • 1 $2.92
    • 10 $2.47
    • 100 $2.01
    • 1000 $1.72
    • 10000 $1.72
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    TTI SIHF12N60E-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.28
    • 10000 $1.21
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    TME SIHF12N60E-GE3 1
    • 1 $2.44
    • 10 $2.19
    • 100 $1.74
    • 1000 $1.63
    • 10000 $1.63
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    EBV Elektronik SIHF12N60E-GE3 14 Weeks 50
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    Vishay Intertechnologies SIHF12N60E-E3

    N-CHANNEL 600V - Rail/Tube (Alt: SIHF12N60E-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF12N60E-E3 Tube 13 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.164
    • 10000 $1.164
    		Buy Now
    Mouser Electronics SIHF12N60E-E3 731
    • 1 $2.7
    • 10 $2.25
    • 100 $1.79
    • 1000 $1.21
    • 10000 $1.2
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    Newark SIHF12N60E-E3 Cut Tape 1,000
    • 1 -
    • 10 -
    • 100 $1.66
    • 1000 $1.66
    • 10000 $1.66
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    SIHF12N60E-E3 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.48
    • 10000 $1.17
    		Buy Now
    TTI SIHF12N60E-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.24
    • 10000 $1.14
    		Buy Now

    Vishay Siliconix SIHF12N60EGE3

    POWER MOSFET Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHF12N60EGE3 1,000
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    SIHF12N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF12N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO220 FULLP Original PDF
    SIHF12N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO220 FULLP Original PDF

    SIHF12N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Pb containing terminations are not RoHS compliant, exemptions


    Original     		PDF SiHF12N60E 2002/95/EC O-220 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF12N60E AN609, 7492u 8750m 0238m 9611m 15-Jan-15

    SIHF12N60E-E3

    Abstract: No abstract text available
    Text: Work-In-Progress SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single


    Original     		PDF SiHF12N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHF12N60E-E3

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.


    Original     		PDF SiHF12N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SIHF12N60E

    Abstract: No abstract text available
    Text: Work-In-Progress SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single


    Original     		PDF SiHF12N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHF12N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHF12N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.38 58 Qgs (nC) 6 Qgd (nC) 13 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.


    Original     		PDF SiHF12N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF12N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF12N60E AN609, 7543m 3363m 9530m 3561m 2552m 3418m 13-Jun-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836