Untitled
Abstract: No abstract text available
Text: Signal processor for inductive sensors up to 250°C EM30-AP6X2-H1141/S1102 • Threaded barrel, M30 x 1.5 ■ Stainless steel, 1.4571 ■ For temperatures up to +70°C ■ To be used only with Ni25-CQ40…and Ni40-CQ80… ■ DC 3-wire, 10…30 VDC ■ NO contact, PNP output
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EM30-AP6X2-H1141/S1102
Ni25-CQ40â
Ni40-CQ80â
316Ti)
2013-07-13T05
D-45472
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Untitled
Abstract: No abstract text available
Text: Inductive sensor with extended temperature range NI40-CQ80/S1102 5M • Rectangular, height 41 mm ■ Aluminium sensor housing ■ Plastic, PEEK ■ Aluminium cable sheath ■ For temperatures up to +250°C ■ ■ ■ To be used only with EM30-AP6X2-H1141/S1102 processing
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NI40-CQ80/S1102
EM30-AP6X2-H1141/S1102
D-45472
EM30-AP6X2-H1141/
S1102
2013-07-13T05
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Untitled
Abstract: No abstract text available
Text: Inductive sensor with extended temperature range NI25-CQ40-L1131/S1102 • Rectangular, height 40 mm ■ Aluminium sensor housing ■ Plastic, PEEK ■ For temperatures up to +250°C ■ ■ ■ To be used only with EM30-AP6X2-H1141/S1102 processing unit and with the HTC1102 *M high-temperature connection cable
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NI25-CQ40-L1131/S1102
EM30-AP6X2-H1141/S1102
HTC1102
EM30-AP6X2-H1141/
S1102
HTC1102
2013-07-13T05
D-45472
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Untitled
Abstract: No abstract text available
Text: Inductive sensor with extended temperature range NI25-CQP40/S1102 5M • ■ Aluminium sensor housing ■ Plastic, PEEK ■ Aluminium cable sheath ■ For temperatures up to +250°C ■ ■ NI25-CQP40/S1102 5M 1602409 Rated operating distance Sn Mounting condition
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NI25-CQP40/S1102
D-45472
EM30-AP6X2-H1141/
S1102
2013-07-13T05
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Untitled
Abstract: No abstract text available
Text: High temperature connection cable for inductive sensor up to 250 °C HTC1102 10M • 10 m FEP cable, shielded, 3 x 0.34 mm ■ Al cable sleeve, Ø 8 mm ■ For temperatures up to +250 °C ■ ■ 2 Operation with signal processor EM30-AP6X2-H1141/S1102 Connection to inductive sensors up to
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HTC1102
EM30-AP6X2-H1141/S1102
s02407
2013-07-13T05
D-45472
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diode Marking code v3
Abstract: No abstract text available
Text: S1102 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption
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S1102
Size-SOT23
S1102E
OT-23:
S12XX
OT-23)
diode Marking code v3
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Untitled
Abstract: No abstract text available
Text: MPPC multi-pixel photon counter S11028 series Thermoelectrically cooled MPPC for photon counting Active area: 1 x 1 mm The S11028 series is a photon counting detector that integrates a 1×1 mm MPPC with a thermoelectrically cooler. It also contains a thermistor for temperature monitoring, allowing stable measurement over long periods of time. A temperature controller
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S11028
C1103-04)
SE-171
KAPD1026E04
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BSM 204-A
Abstract: No abstract text available
Text: BSM 204 A SIMOPAC MODULE • Half bridge power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate Type VDS ID RDS on max Package Ordering Code BSM 204 A 50 V 200 A 0.0045 Ω HB MOS 1 C67076-S1102-A20
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C67076-S1102-A20
Oct-30-1997
BSM 204-A
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C11040
Abstract: No abstract text available
Text: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21
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SiB437EDKT
SC-75
2002/95/EC
SC-75-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
C11040
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Untitled
Abstract: No abstract text available
Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21
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SiB404DK
SC-75
2002/95/EC
SC-75-6L-Single
SiB404DK-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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marking code vishay SILICONIX
Abstract: SIA915DJ
Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA915DJ
SC-70
2002/95/EC
SC-70-6
SiA915DJ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code vishay SILICONIX
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N-Channel mosfet sot-363
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Si1539CDL
OT-363
SC-70
Si1539CDL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
N-Channel mosfet sot-363
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67341
Abstract: si4403C si4403
Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21
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Si4403CDY
2002/95/EC
Si4403CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
67341
si4403C
si4403
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diode s1 77
Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
Text: P1 TTL0 P1 D3 A1 TTL3 A2 TTL6 A3 TTL9 A4 D2 D1 D0 S1-118 S1-110 S1-103 S1-100 TTL1 TTL8 C3 B4 TTL11 C4 TTL13 C5 TTL15 C6 TTL16 C7 TTL17 C8 TTL19 C9 AGND C10 PVCC C11 TTL20 C12 TTL21 C13 TTL22 C14 TTL23 C15 TTL24 C16 TTL25 C17 PVCC C18 TTL26 C19 PVPP C20 TTL28
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S1-118
S1-110
S1-103
S1-100
S1-122
S1-127
TTL11
TTL13
TTL15
TTL16
diode s1 77
S124
diode s1
diode s1 74
socket s1
S1-100
S1-128
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countersunk screw for pcb
Abstract: S3215
Text: NEXT FIND IT Slanted enclosures are available in six styles with either rounded or square corners. Materials Base and cover ABS [Acrylonitrile Butadiene Styrene] ABS Polycarbonate (PC) Aluminum (AL) Panels Anodized Aluminum (AA) Please see each ordering page for
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S6-550SP
S6-660SP
S6-770SP
countersunk screw for pcb
S3215
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sir662dp
Abstract: No abstract text available
Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
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SiR662DP
2002/95/EC
SiR662DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses
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Si4392ADY
2002/95/EC
Si4392ADY-T1-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion
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Si7392ADP
2002/95/EC
Si7392ADP-T1-E3
Si7392ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Si7138DP
2002/95/EC
Si7138DP-T1-E3
Si7138DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Si7138DP
2002/95/EC
Si7138DP-T1-E3
Si7138DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ7002K Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 1.30 RDS(on) () at VGS = 4.5 V 1.90 ID (A) 0.32 Configuration Single D TO-236 SOT-23 G • Halogen-free According to IEC 61249-2-21
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SQ7002K
O-236
OT-23
AEC-Q101
2002/95/EC
OT-23
SQ7002K-T1-GE3
18-Jul-08
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sil1364
Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa
Text: 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name : Mother Board Schematic Project : M11D Santa Rosa Version : 0.1 Initial Date : March 22 , 2007 B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree Shin-Lin District, Taipei 111, Taiwan
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120ohm
200mA
15ohm
20mil
10mil
sil1364
PZ4782K
am4825p
ITE8512F
fds8884
G784P81U
IT8305E
G545B1P8U
Inventec
M11D Santa Rosa
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EE-SX1102
Abstract: EE-SX1101 sx1101 EE-SX4101 EE-S1102
Text: omRon EE-SX1101, EE-SX1102, EE-SX4101 Ultra Compact Photomicrosensors with 5.2-mm Height and 2.0-mm Width Slot • Models EE-SX1101 and EE-S1102 have photo transistor output. ■ Model EE-SX4101 has Light-ON photo IC output. ■ Model EE-SX1102 has leads configured for surface
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EE-SX1101,
EE-SX1102,
EE-SX4101
EE-SX1101
EE-S1102
EE-SX4101
EE-SX1102
sx1101
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Untitled
Abstract: No abstract text available
Text: 00 o N- <9 I J ' T 7_ ' 1.74 Part No. Poles A B S B S 1101T SB S1102T SB S1103T SB S1104T SB S1105T SB S1106T SB S1107T SB S1108T SB S1109T SB S1110T SB S1112T 1 2 3.48 6.02 8.56 11.10 13.64 16.18 18.72 21.26 23.80 26.34 31.42 2.54 5.08 7.62 10.16 12.70 15.24
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1101T
S1102T
S1103T
S1104T
S1105T
S1106T
S1107T
S1108T
S1109T
S1110T
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