Untitled
Abstract: No abstract text available
Text: Si4392ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 a RDS(on) () ID (A) 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • • • • Qg (Typ.) 12 nC Extremely Low Qgd for Low Switching Losses
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Si4392ADY
2002/95/EC
Si4392ADY-T1-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si4392ADY
Abstract: Si4392ADY-T1-E3
Text: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Si4392ADY
Si4392ADY-T1-E3
S-61089-Rev.
19-Jun-06
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2648
Abstract: 3271 AN609 Si4392ADY
Text: Si4392ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4392ADY
AN609
02-Mar-06
2648
3271
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Si4392ADY
Abstract: Si4392ADY-T1-E3 SI4392
Text: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Si4392ADY
Si4392ADY-T1-E3
18-Jul-08
SI4392
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Untitled
Abstract: No abstract text available
Text: Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY rDS on (W) ID (A)a 0.0075 @ VGS = 10 V 21.5 0.0115 @ VGS = 4.5 V 17.4 VDS (V) 30 Qg (Typ) 12 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses
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Si4392ADY
Si4392ADY-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4392ADY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A)a 0.0075 at VGS = 10 V 21.5 0.0115 at VGS = 4.5 V 17.4 • Extremely Low Qgd WFET Technology for Low Switching Losses
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Si4392ADY
Si4392ADY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4392ADY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET FEATURES PRODUCT SUMMARY rDS on (W) ID (A)a 0.0075 @ VGS = 10 V 21.5 0.0115 @ VGS = 4.5 V 17.4 VDS (V) 30 Qg (Typ) 12 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses
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Si4392ADY
Si4392ADY-T1
51802--Rev.
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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