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    SI4403 Price and Stock

    Vishay Siliconix SI4403DDY-T1-GE3

    MOSFET P-CH 20V 15.4A 8SOIC
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    DigiKey SI4403DDY-T1-GE3 Digi-Reel 6,596 1
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    SI4403DDY-T1-GE3 Cut Tape 6,596 1
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    SI4403DDY-T1-GE3 Reel 5,000 2,500
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    Vishay Siliconix SI4403CDY-T1-GE3

    MOSFET P-CH 20V 13.4A 8SO
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    DigiKey SI4403CDY-T1-GE3 Reel 5,000 2,500
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    New Advantage Corporation SI4403CDY-T1-GE3 10,000 1
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    Vishay Siliconix SI4403BDY-T1-E3

    MOSFET P-CH 20V 7.3A 8SO
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    DigiKey SI4403BDY-T1-E3 Digi-Reel 1
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    Bristol Electronics SI4403BDY-T1-E3 1,123
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    Quest Components SI4403BDY-T1-E3 3,276
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    SI4403BDY-T1-E3 898
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    Velocity Electronics SI4403BDY-T1-E3 3
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    Vishay Siliconix SI4403BDY-T1-GE3

    MOSFET P-CH 20V 7.3A 8SO
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    DigiKey SI4403BDY-T1-GE3 Cut Tape
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    SI4403BDY-T1-GE3 Digi-Reel 1
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    Vishay Intertechnologies SI4403CDY-T1-GE3

    Trans MOSFET P-CH 20V 9.4A 8-Pin SO T/R - Tape and Reel (Alt: SI4403CDY-T1-GE3)
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    Avnet Americas SI4403CDY-T1-GE3 Reel 2,500 17 Weeks 2,500
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    SI4403CDY-T1-GE3 Reel 17 Weeks 2,500
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    Mouser Electronics SI4403CDY-T1-GE3 57,614
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    Verical SI4403CDY-T1-GE3 5,000 2,500
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    SI4403CDY-T1-GE3 2,500 2,500
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    Arrow Electronics SI4403CDY-T1-GE3 5,000 17 Weeks 2,500
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    SI4403CDY-T1-GE3 2,500 17 Weeks 2,500
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    Newark SI4403CDY-T1-GE3 Cut Tape 28,890 5
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    SI4403CDY-T1-GE3 Reel 2,500
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    Bristol Electronics SI4403CDY-T1-GE3 10,040
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    TTI SI4403CDY-T1-GE3 Reel 30,000 2,500
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    TME SI4403CDY-T1-GE3 2,139 1
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    NAC SI4403CDY-T1-GE3 5,000 1
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    Chip1Stop SI4403CDY-T1-GE3 5,000
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    SI4403CDY-T1-GE3 2,500
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    EBV Elektronik SI4403CDY-T1-GE3 18 Weeks 2,500
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    SI4403 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4403BDY Vishay Siliconix MOSFETs Original PDF
    Si4403BDY SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4403BDY-T1 Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4403BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8-SOIC Original PDF
    SI4403BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8SOIC Original PDF
    SI4403CDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 13.4A 8SOIC Original PDF
    SI4403DDY-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 8SOIC Original PDF
    Si4403DY Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI4403DY Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF

    SI4403 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    67341

    Abstract: si4403C si4403
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


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    PDF Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403

    Si4403BDY

    Abstract: Si4403BDY-T1
    Text: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7


    Original
    PDF Si4403BDY Si4403BDY-T1 S-31412--Rev. 07-Jul-03

    4833

    Abstract: 8891 AN609 Si4403BDY 1.2309
    Text: Si4403BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si4403BDY AN609 14-Mar-07 4833 8891 1.2309

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    67341

    Abstract: No abstract text available
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 11-Mar-11 67341

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4403CDY 18-Jul-08

    MOSFET SO-8

    Abstract: No abstract text available
    Text: Specification Comparison Vishay Siliconix Si4403CDY vs. Si4403BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4403CDY-T1-GE3 replaces Si4403BDY-T1-GE3 Si4403CDY-T1-GE3 replaces Si4403BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original
    PDF Si4403CDY Si4403BDY Si4403CDY-T1-GE3 Si4403BDY-T1-GE3 Si4403BDY-T1-E3 23-Mar-11 MOSFET SO-8

    Untitled

    Abstract: No abstract text available
    Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4403BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4403BDY 24-Jun-03

    Untitled

    Abstract: No abstract text available
    Text: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7


    Original
    PDF Si4403BDY Si4403BDY-T1 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch


    Original
    PDF Si4403DY 08-Apr-05

    25783

    Abstract: 2578-3 51540 676-42
    Text: Si4403CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    PDF Si4403CDY AN609, 2462m 6127m 2152m 9573u 2530m 9287m 7235m 25783 2578-3 51540 676-42

    Si4403BDY

    Abstract: Si4403BDY-T1 Si4403BDY-T1-E3
    Text: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available


    Original
    PDF Si4403BDY Si4403BDY-T1 Si4403BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4403CDY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4403CDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A1818

    Abstract: No abstract text available
    Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A1818

    Si4403BDY

    Abstract: Si4403BDY-T1-E3 Si4403BDY-T1-GE3
    Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 11-Mar-11

    Si4403DY

    Abstract: No abstract text available
    Text: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch


    Original
    PDF Si4403DY S-04393--Rev. 13-Aug-01

    SI4403BDY-T1-GE3

    Abstract: Si4403BDY Si4403BDY-T1-E3
    Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    PDF Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 18-Jul-08

    Si4403DY

    Abstract: No abstract text available
    Text: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch


    Original
    PDF Si4403DY 18-Jul-08

    Si4403BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si4403BDY 18-Jul-08

    A1818

    Abstract: No abstract text available
    Text: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available


    Original
    PDF Si4403BDY Si4403BDY-T1 Si4403BDY-T1-E3 18-Jul-08 A1818

    Siliconix Handbook

    Abstract: No abstract text available
    Text: MIC5159 Micrel MIC5159 Programmable Current Limit µCap LDO Regulator Controller Advance Information General Description Features Micrel’s MIC5159 is a precision voltage regulator controller. Used with an external P-Channel MOSFET, the MIC5159 forms a two-chip low dropout regulator capable of driving a


    Original
    PDF MIC5159 MIC5159 OT-23-6, Siliconix Handbook