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Vishay Siliconix SI4403CDY-T1-GE3 MOSFET P-CH 20V 13.4A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4403CDY-T1-GE3	Cut Tape	9,283		1	1 $1.17 10 $0.734 100 $1.17 1000 $0.3395 10000 $0.3395	Buy Now
	SI4403CDY-T1-GE3	Digi-Reel	9,283		1	1 $1.17 10 $0.734 100 $1.17 1000 $0.3395 10000 $0.3395	Buy Now
	SI4403CDY-T1-GE3	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.30177	Buy Now
New Advantage Corporation	SI4403CDY-T1-GE3		5,000		1	1 - 10 - 100 - 1000 - 10000 $0.2	Buy Now
Vishay Siliconix SI4403DDY-T1-GE3 MOSFET P-CH 20V 15.4A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4403DDY-T1-GE3	Cut Tape	5,891		1	1 $0.73 10 $0.454 100 $0.73 1000 $0.2001 10000 $0.2001	Buy Now
	SI4403DDY-T1-GE3	Digi-Reel	5,891		1	1 $0.73 10 $0.454 100 $0.73 1000 $0.2001 10000 $0.2001	Buy Now
	SI4403DDY-T1-GE3	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.17567	Buy Now
Vishay Siliconix SI4403BDY-T1-E3 MOSFET P-CH 20V 7.3A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4403BDY-T1-E3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4403BDY-T1-E3	Digi-Reel			1	1 $0.86 10 $0.86 100 $0.86 1000 $0.86 10000 $0.86	Buy Now
	SI4403BDY-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	SI4403BDY-T1-E3		1,123			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI4403BDY-T1-E3		3,276			1 $1.5 10 $1.5 100 $1.5 1000 $1.5 10000 $0.525	Buy Now
	SI4403BDY-T1-E3		898			1 $2.5 10 $2.5 100 $2.5 1000 $0.875 10000 $0.875	Buy Now
Velocity Electronics	SI4403BDY-T1-E3		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI4403BDY-T1-GE3 MOSFET P-CH 20V 7.3A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4403BDY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4403BDY-T1-GE3	Digi-Reel			1	1 $0.86 10 $0.86 100 $0.86 1000 $0.86 10000 $0.86	Buy Now
	SI4403BDY-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4403CDY-T1-GE3 Trans MOSFET P-CH 20V 9.4A 8-Pin SO T/R - Tape and Reel (Alt: SI4403CDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4403CDY-T1-GE3	Reel	2,500	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.237	Buy Now
	SI4403CDY-T1-GE3	Reel		16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.20671	Buy Now
Mouser Electronics	SI4403CDY-T1-GE3		47,239			1 $1.05 10 $0.679 100 $0.459 1000 $0.33 10000 $0.25	Buy Now
Newark	SI4403CDY-T1-GE3	Cut Tape	27,989		5	1 $0.826 10 $0.679 100 $0.489 1000 $0.489 10000 $0.489	Buy Now
	SI4403CDY-T1-GE3	Reel			2,500	1 $0.352 10 $0.352 100 $0.352 1000 $0.352 10000 $0.318	Buy Now
Bristol Electronics	SI4403CDY-T1-GE3		10,040			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SI4403CDY-T1-GE3	Reel	30,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.241	Buy Now

TME	SI4403CDY-T1-GE3		2,139		1	1 $0.675 10 $0.509 100 $0.437 1000 $0.395 10000 $0.374	Buy Now
Avnet Asia	SI4403CDY-T1-GE3			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.30521	Buy Now
EBV Elektronik	SI4403CDY-T1-GE3			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SI4403 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
SI4403BDY	Vishay Siliconix	MOSFETs	Original	PDF
Si4403BDY SPICE Device Model	Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI4403BDY-T1	Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI4403BDY-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8-SOIC	Original	PDF
SI4403BDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 7.3A 8SOIC	Original	PDF
SI4403CDY-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 13.4A 8SOIC	Original	PDF
SI4403DDY-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 20V 8SOIC	Original	PDF
Si4403DY	Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI4403DY	Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET	Original	PDF

SI4403 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
67341 Abstract: si4403C si4403 Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403	PDF
Si4403BDY Abstract: Si4403BDY-T1 Text: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7	Original	Si4403BDY Si4403BDY-T1 S-31412--Rev. 07-Jul-03	PDF
4833 Abstract: 8891 AN609 Si4403BDY 1.2309 Text: Si4403BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4403BDY AN609 14-Mar-07 4833 8891 1.2309	PDF
Untitled Abstract: No abstract text available Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
67341 Abstract: No abstract text available Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 11-Mar-11 67341	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4403CDY 18-Jul-08	PDF
MOSFET SO-8 Abstract: No abstract text available Text: Specification Comparison Vishay Siliconix Si4403CDY vs. Si4403BDY Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4403CDY-T1-GE3 replaces Si4403BDY-T1-GE3 Si4403CDY-T1-GE3 replaces Si4403BDY-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4403CDY Si4403BDY Si4403CDY-T1-GE3 Si4403BDY-T1-GE3 Si4403BDY-T1-E3 23-Mar-11 MOSFET SO-8	PDF
Untitled Abstract: No abstract text available Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si4403BDY Abstract: No abstract text available Text: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4403BDY 24-Jun-03	PDF
Untitled Abstract: No abstract text available Text: Si4403BDY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.017 @ VGS = - 4.5 V - 9.9 0.023 @ VGS = - 2.5 V - 8.5 0.032 @ VGS = - 1.8 V - 7.2 D TrenchFETr Power MOSFETS S SO-8 S 1 8 D S 2 7	Original	Si4403BDY Si4403BDY-T1 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch	Original	Si4403DY 08-Apr-05	PDF
25783 Abstract: 2578-3 51540 676-42 Text: Si4403CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si4403CDY AN609, 2462m 6127m 2152m 9573u 2530m 9287m 7235m 25783 2578-3 51540 676-42	PDF
Si4403BDY Abstract: Si4403BDY-T1 Si4403BDY-T1-E3 Text: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available	Original	Si4403BDY Si4403BDY-T1 Si4403BDY-T1-E3 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 11-Mar-11	PDF

Untitled Abstract: No abstract text available Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21	Original	Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4403CDY www.vishay.com Vishay Siliconix P-Channel 1.8 V G-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4403CDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
A1818 Abstract: No abstract text available Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 A1818	PDF
Si4403BDY Abstract: Si4403BDY-T1-E3 Si4403BDY-T1-GE3 Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 11-Mar-11	PDF
Si4403DY Abstract: No abstract text available Text: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch	Original	Si4403DY S-04393--Rev. 13-Aug-01	PDF
SI4403BDY-T1-GE3 Abstract: Si4403BDY Si4403BDY-T1-E3 Text: Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4403BDY 2002/95/EC Si4403BDY-T1-E3 Si4403BDY-T1-GE3 18-Jul-08	PDF
Si4403DY Abstract: No abstract text available Text: Si4403DY New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.017 @ VGS = –4.5 V –9 0.023 @ VGS = –2.5 V –7 0.032 @ VGS = –1.8 V –6 D TrenchFETr Power MOSFETS APPLICATIONS D Load Switch	Original	Si4403DY 18-Jul-08	PDF
Si4403BDY Abstract: No abstract text available Text: SPICE Device Model Si4403BDY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4403BDY 18-Jul-08	PDF
A1818 Abstract: No abstract text available Text: Si4403BDY Vishay Siliconix New Product P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 • TrenchFET Power MOSFETS Pb-free - 20 Available	Original	Si4403BDY Si4403BDY-T1 Si4403BDY-T1-E3 18-Jul-08 A1818	PDF
Siliconix Handbook Abstract: No abstract text available Text: MIC5159 Micrel MIC5159 Programmable Current Limit µCap LDO Regulator Controller Advance Information General Description Features Micrel’s MIC5159 is a precision voltage regulator controller. Used with an external P-Channel MOSFET, the MIC5159 forms a two-chip low dropout regulator capable of driving a	Original	MIC5159 MIC5159 OT-23-6, Siliconix Handbook	PDF

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SI4403 Price and Stock

Vishay Siliconix SI4403CDY-T1-GE3

Vishay Siliconix SI4403DDY-T1-GE3

Vishay Siliconix SI4403BDY-T1-E3

Vishay Siliconix SI4403BDY-T1-GE3

Vishay Intertechnologies SI4403CDY-T1-GE3

SI4403 Datasheets (9)

SI4403 Datasheets Context Search

67341

Si4403BDY

4833

Untitled

67341

Untitled

MOSFET SO-8

Untitled

Si4403BDY

Untitled

Untitled

25783

Si4403BDY

Untitled

Untitled

Untitled

A1818

Si4403BDY

Si4403DY

SI4403BDY-T1-GE3

Si4403DY

Si4403BDY

A1818

Siliconix Handbook